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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| BSP373L6327HTSA1 DISTI # BSP373L6327HTSA1TR-ND | Infineon Technologies AG | MOSFET N-CH 100V 1.7A SOT-223 RoHS: Compliant Min Qty: 2000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BSP373L6327HTSA1 DISTI # BSP373L6327HTSA1CT-ND | Infineon Technologies AG | MOSFET N-CH 100V 1.7A SOT-223 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| BSP373L6327HTSA1 DISTI # BSP373L6327HTSA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 100V 1.7A SOT-223 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| BSP373L6327HTSA1 DISTI # 25M7808 | Infineon Technologies AG | MOSFET, N CHANNEL, 100V, 1.7A, SOT-223,Transistor Polarity:N Channel,Continuous Drain Current Id:1.7A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.16ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes | 0 | |
| BSP373 L6327 DISTI # 726-BSP373L6327 | Infineon Technologies AG | MOSFET N-Ch 100V 1.7A SOT-223-3 RoHS: Compliant | 0 | |
| BSP373L6327HTSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 1.7A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 5000 |
|
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: BSP373L6327 OMO.#: OMO-BSP373L6327-1190 |
Power Field-Effect Transistor, 1.7A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
Mfr.#: BSP373L6327HTSA1 |
MOSFET N-CH 100V 1.7A SOT-223 |
