SI6423DQ-T1-E3

Mfr. #:: SI6423DQ-T1-E3
Produttore:: Vishay
Descrizione:: Darlington Transistors MOSFET 12V 9.5A 1.5W 8.5mohm @ 4.5V
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: SI6423DQ-T1-E3 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
Pagamento:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Attributo del prodotto
Valore attributo

Produttore: VISHAY

categoria di prodotto: FET - Single

Serie: TrinceaFETR

Confezione: Imballaggio alternativo Digi-ReelR

Alias parziali: SI6423DQ-T1

Unità di peso: 0.005573 oz

Stile di montaggio: SMD/SMT

Pacchetto-Custodia: 8-TSSOP (0.173", 4.40mm Width)

Tecnologia: si

Temperatura di esercizio: -55°C ~ 150°C (TJ)

Tipo di montaggio: Montaggio superficiale

Numero di canali: 1 Channel

Pacchetto-dispositivo-fornitore: 8-TSSOP

Configurazione: Separare

Tipo FET: MOSFET Canale P, ossido di metallo

Potenza-Max: 1.05W

Tipo a transistor: 1 P-Channel

Drain-to-Source-Voltage-Vdss: 12V

Ingresso-Capacità-Ciss-Vds: -

Funzione FET: Standard

Corrente-Continuo-Scarico-Id-25°C: 8.2A (Ta)

Rds-On-Max-Id-Vgs: 8.5 mOhm @ 9.5A, 4.5V

Vgs-th-Max-Id: 800mV @ 400μA

Gate-Carica-Qg-Vgs: 110nC @ 5V

Pd-Power-Dissipazione: 1.05 W

Massima temperatura di esercizio: + 150 C

Temperatura di esercizio minima: - 55 C

Tempo di caduta: 75 ns

Ora di alzarsi: 75 ns

Vgs-Gate-Source-Voltage: 8 V

Id-Continuo-Scarico-Corrente: 8.2 A

Vds-Drain-Source-Breakdown-Voltage: - 12 V

Rds-On-Drain-Source-Resistenza: 8.5 mOhms

Polarità del transistor: Canale P

Tempo di ritardo allo spegnimento tipico: 270 ns

Tempo di ritardo all'accensione tipico: 50 ns

Modalità canale: Aumento

Tags: SI6423DQ-T, SI6423, SI642, SI64, SI6

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI6423DQ-T1-E3 Descrizione

***ure Electronics: Single P-Channel 12 V 8.5 mOhm Surface Mount TrenchFET Power Mosfet - TSSOP-8

***et Europe: Trans MOSFET P-CH 12V 8.2A 8-Pin TSSOP T/R

***i-Key: MOSFET P-CH 12V 8.2A 8-TSSOP

***ronik: P-CH 12V 9A 9mOhm TSSOP-8 RoHSconf

***: P-CHANNEL 12-V (D-S) MOSFET

***ark: Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:-9.5A; Drain Source Voltage, Vds:-12V; On Resistance, Rds(on):0.0085ohm; Rds(on) Test Voltage, Vgs:-4.5V; Threshold Voltage, Vgs Typ:-0.4V; Power Dissipation, Pd:1.05W ;RoHS Compliant: Yes

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
SI6423DQ-T1-E3 DISTI # V72:2272_09215414	Vishay Intertechnologies	Trans MOSFET P-CH 12V 8.2A 8-Pin TSSOP T/R RoHS: Compliant	3000	3000:$0.6685 1000:$0.7170 500:$0.8462 250:$0.9589 100:$0.9692 25:$1.1909 10:$1.2049 1:$1.4041
SI6423DQ-T1-E3 DISTI # SI6423DQ-T1-E3TR-ND	Vishay Siliconix	MOSFET P-CH 12V 8.2A 8-TSSOP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$0.8465
SI6423DQ-T1-E3 DISTI # SI6423DQ-T1-E3CT-ND	Vishay Siliconix	MOSFET P-CH 12V 8.2A 8-TSSOP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.9364 500:$1.1302 100:$1.4531 10:$1.8080 1:$2.0000
SI6423DQ-T1-E3 DISTI # SI6423DQ-T1-E3DKR-ND	Vishay Siliconix	MOSFET P-CH 12V 8.2A 8-TSSOP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.9364 500:$1.1302 100:$1.4531 10:$1.8080 1:$2.0000
SI6423DQ-T1-E3 DISTI # 16623336	Vishay Intertechnologies	Trans MOSFET P-CH 12V 8.2A 8-Pin TSSOP T/R RoHS: Compliant	3000	3000:$0.7509
SI6423DQ-T1-E3 DISTI # 31353840	Vishay Intertechnologies	Trans MOSFET P-CH 12V 8.2A 8-Pin TSSOP T/R RoHS: Compliant	3000	9:$1.4041
SI6423DQ-T1-E3 DISTI # SI6423DQ-T1-E3	Vishay Intertechnologies	Trans MOSFET P-CH 12V 8.2A 8-Pin TSSOP T/R - Tape and Reel (Alt: SI6423DQ-T1-E3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.7939 6000:$0.7699 12000:$0.7389 18000:$0.7179 30000:$0.6989
SI6423DQ-T1-E3 DISTI # 06J8059	Vishay Intertechnologies	P CHANNEL MOSFET, -12V, 9.5A, TSSOP, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-9.5A,Drain Source Voltage Vds:-12V,On Resistance Rds(on):0.0085ohm,Rds(on) Test Voltage Vgs:-4.5V,No. of Pins:8Pins RoHS Compliant: Yes	0	1:$0.9580 1000:$0.9010 2000:$0.8550 4000:$0.7700 6000:$0.7410 10000:$0.7130
SI6423DQ-T1-E3 DISTI # 85W2157	Vishay Intertechnologies	Transistor Polarity:P Channel,Continuous Drain Current Id:-9.5A,Drain Source Voltage Vds:-12V,On Resistance Rds(on):0.0068ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-400mV,Power Dissipation Pd:1.5W RoHS Compliant: No	0	1:$2.0000 25:$1.9000 50:$1.7600 100:$1.5900 250:$1.4200 500:$1.2400 1000:$1.0600
SI6423DQ-T1-E3 DISTI # 781-SI6423DQ-T1-E3	Vishay Intertechnologies	MOSFET -12V Vds 8V Vgs TSSOP-8 RoHS: Compliant	2530	1:$1.7000 10:$1.4100 100:$1.1000 500:$0.9550 1000:$0.7920 3000:$0.7370
SI6423DQ-T1-E3	Vishay Siliconix	8200 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET	4	3:$1.8188 1:$2.1825
SI6423DQ-T1-E3	Vishay Intertechnologies	MOSFET -12V Vds 8V Vgs TSSOP-8	Americas -
SI6423DQ-T1-E3 DISTI # C1S803601453370	Vishay Intertechnologies	MOSFETs RoHS: Compliant	3000	3001:$0.6808

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: SI6423DQ-T1-GE3 OMO.#: OMO-SI6423DQ-T1-GE3	MOSFET -12V Vds 8V Vgs TSSOP-8
	Mfr.#: SI6423DQ-T1-E3 OMO.#: OMO-SI6423DQ-T1-E3	MOSFET -12V Vds 8V Vgs TSSOP-8
	Mfr.#: SI6423DQ-T1-E3 OMO.#: OMO-SI6423DQ-T1-E3-VISHAY	Darlington Transistors MOSFET 12V 9.5A 1.5W 8.5mohm @ 4.5V
	Mfr.#: SI6423DQ-T1-E3-CUT TAPE OMO.#: OMO-SI6423DQ-T1-E3-CUT-TAPE-1190	Nuovo e originale
	Mfr.#: SI6423DQ OMO.#: OMO-SI6423DQ-1190	Nuovo e originale
	Mfr.#: SI6423DQ-T1-GE3 OMO.#: OMO-SI6423DQ-T1-GE3-VISHAY	MOSFET P-CH 12V 8.2A 8-TSSOP
	Mfr.#: SI6423DQ-T1-GE3CT-ND OMO.#: OMO-SI6423DQ-T1-GE3CT-ND-1190	Nuovo e originale

Disponibilità

Azione:: Available
Su ordine:: 4500
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Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~1,00 USD~~; ~~1,00 USD~~

10: ~~0,95 USD~~; ~~9,53 USD~~

100: ~~0,90 USD~~; ~~90,25 USD~~

500: ~~0,85 USD~~; ~~426,15 USD~~

1000: ~~0,80 USD~~; ~~802,20 USD~~

Iniziare con

SI6423DQ-T 4
SI6423 5
SI642 14
SI64 152
SI6 530

SI6423DQ-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes