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IPW50R299CP

IPW50R299CP
Mfr. #:
IPW50R299CP
Produttore:
Rochester Electronics, LLC
Descrizione:
IGBT Transistors MOSFET N-Ch 500V 12A TO247-3 CoolMOS CP
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IPW50R299CP Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
categoria di prodotto
FET - Single
Serie
CoolMOS CP
Confezione
Tubo
Alias ​​parziali
IPW50R299CPFKSA1 IPW50R299CPXK SP000301163
Unità di peso
1.340411 oz
Stile di montaggio
Foro passante
Nome depositato
CoolMOS
Pacchetto-Custodia
TO-247-3
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
104 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
12 ns
Ora di alzarsi
14 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
12 A
Vds-Drain-Source-Breakdown-Voltage
500 V
Rds-On-Drain-Source-Resistenza
299 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
80 ns
Tempo di ritardo all'accensione tipico
35 ns
Modalità canale
Aumento
Tags
IPW50R29, IPW50R2, IPW50, IPW5, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-247
***ment14 APAC
MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:550V; On Resistance Rds(on):299mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:104W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2011); Current Id Max:12A; Package / Case:TO-247; Power Dissipation Pd:104W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:550V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***ineon
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
Parte # Mfg. Descrizione Azione Prezzo
IPW50R299CPFKSA1
DISTI # IPW50R299CPFKSA1-ND		Infineon Technologies AGMOSFET N-CH 550V 12A TO247-3
RoHS: Compliant
Min Qty: 240
Container: Tube		Limited Supply - Call
    IPW50R299CPInfineon Technologies AGPower Field-Effect Transistor, 12A I(D), 500V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
    RoHS: Compliant    		9838
    • 1000:$1.2600
    • 500:$1.3300
    • 100:$1.3800
    • 25:$1.4400
    • 1:$1.5600
    IPW50R299CPFKSA1Infineon Technologies AGPower Field-Effect Transistor, 12A I(D), 500V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
    RoHS: Compliant    		140
    • 1000:$1.2600
    • 500:$1.3300
    • 100:$1.3800
    • 25:$1.4400
    • 1:$1.5600
    IPW50R299CP
    DISTI # 726-IPW50R299CP    		Infineon Technologies AGMOSFET N-Ch 500V 12A TO247-3 CoolMOS CP
    RoHS: Compliant    		210
    • 1:$2.7600
    • 10:$2.3500
    • 100:$2.0400
    IPW50R299CPFKSA1
    DISTI # N/A    		Infineon Technologies AGMOSFET LOW POWER_LEGACY0
      Immagine Parte # Descrizione
      IPW50R299CPFKSA1

      Mfr.#: IPW50R299CPFKSA1

      OMO.#: OMO-IPW50R299CPFKSA1

      		 MOSFET LOW POWER_LEGACY
      IPW50R140CPFKSA1

      Mfr.#: IPW50R140CPFKSA1

      OMO.#: OMO-IPW50R140CPFKSA1

      		 MOSFET HIGH POWER_LEGACY
      IPW50R190CEFKSA1 , 2SJ23

      Mfr.#: IPW50R190CEFKSA1 , 2SJ23

      OMO.#: OMO-IPW50R190CEFKSA1-2SJ23-1190

      		 Nuovo e originale
      IPW50R250CPFKSA1

      Mfr.#: IPW50R250CPFKSA1

      OMO.#: OMO-IPW50R250CPFKSA1-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 500V 13A TO-247
      IPW50R399CP,5R399P

      Mfr.#: IPW50R399CP,5R399P

      OMO.#: OMO-IPW50R399CP-5R399P-1190

      		 Nuovo e originale
      IPW50R399CPS

      Mfr.#: IPW50R399CPS

      OMO.#: OMO-IPW50R399CPS-1190

      		 Nuovo e originale
      IPW50R199CP

      Mfr.#: IPW50R199CP

      OMO.#: OMO-IPW50R199CP-124

      		 Darlington Transistors MOSFET N-Ch 500V 17A TO247-3 CoolMOS CP
      IPW50R250CP

      Mfr.#: IPW50R250CP

      OMO.#: OMO-IPW50R250CP-124

      		 Darlington Transistors MOSFET N-Ch 500V 13A TO247-3 CoolMOS CP
      IPW50R190CEFKSA1

      Mfr.#: IPW50R190CEFKSA1

      OMO.#: OMO-IPW50R190CEFKSA1-INFINEON-TECHNOLOGIES

      		 Darlington Transistors MOSFET N-Ch 550V 63A TO247-3
      IPW50R350CP

      Mfr.#: IPW50R350CP

      OMO.#: OMO-IPW50R350CP-126

      		 IGBT Transistors MOSFET N-Ch 500V 10A TO247-3 CoolMOS CP
      Disponibilità
      Azione:
      Available
      Su ordine:
      4500
      Inserisci la quantità:
      Il prezzo attuale di IPW50R299CP è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
      Prezzo di riferimento (USD)
      Quantità
      Prezzo unitario
      est. Prezzo
      1
      2,12 USD
      2,12 USD
      10
      2,01 USD
      20,09 USD
      100
      1,90 USD
      190,35 USD
      500
      1,80 USD
      898,90 USD
      1000
      1,69 USD
      1 692,00 USD
      A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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