OMO ElectronicOMO Electronic
Expand menu
Ciao, accediIl mio account
0 Carrello

FQPF6N80CT

FQPF6N80CT
Mfr. #:
FQPF6N80CT
Produttore:
ON Semiconductor / Fairchild
Descrizione:
MOSFET 800V N-Ch Adv Q-FET C-Series
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FQPF6N80CT Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-220-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
800 V
Id - Corrente di scarico continua:
5.5 A
Rds On - Resistenza Drain-Source:
2.5 Ohms
Vgs - Tensione Gate-Source:
30 V
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
51 W
Configurazione:
Separare
Modalità canale:
Aumento
Confezione:
Tubo
Altezza:
16.3 mm
Lunghezza:
10.67 mm
Serie:
FQPF6N80C
Tipo di transistor:
1 N-Channel
Larghezza:
4.7 mm
Marca:
ON Semiconductor / Fairchild
Transconduttanza diretta - Min:
5.4 S
Tempo di caduta:
44 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
65 ns
Quantità confezione di fabbrica:
1000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
47 ns
Tempo di ritardo di accensione tipico:
26 ns
Unità di peso:
0.080072 oz
Tags
FQPF6N80C, FQPF6N80, FQPF6N8, FQPF6N, FQPF6, FQPF, FQP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
Power MOSFET, N-Channel, QFET®, 800 V, 5.5 A, 2.5 Ω, TO-220F
***Yang
Trans MOSFET N-CH 800V 5.5A 3-Pin(3+Tab) TO-220FP Tube
***r Electronics
Power Field-Effect Transistor, 5.5A I(D), 800V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N, TO-220F; Transistor Type:Enhancement; Transistor Polarity:N; Voltage, Vds Typ:800V; Current, Id Cont:5.5A; Resistance, Rds On:2.5ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220F; Termination Type:Through Hole; Current, Idm Pulse:22A; No. of Pins:3; Power Dissipation:51W; Voltage, Vds Max:800V; Voltage, Vgs th Max:5V
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***emi
Power MOSFET, N-Channel, QFET®, 800 V, 7 A, 1.9 Ω, TO-220F
***ow.cn
Trans MOSFET N-CH 800V 6.6A 3-Pin(3+Tab) TO-220FP Tube
***nell
MOSFET, N-CH, 800V, 6.6A, TO-220F-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.6A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 1.57ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V;
***r Electronics
Power Field-Effect Transistor, 6.6A I(D), 800V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***va Crawler
N-channel 800 V, 1.5 Ohm typ., 5.2 A SuperMESH Power MOSFET in a TO-220FP package
***ical
Trans MOSFET N-CH 800V 5.2A 3-Pin(3+Tab) TO-220FP Tube
***el Electronic
MSP430F563x Mixed Signal Microcontroller 113-BGA MICROSTAR JUNIOR -40 to 85
***ponent Stockers USA
5.2 A 800 V 1.8 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***nell
MOSFET, N, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.2A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 1.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipat
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 5.2A I(D), 800V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***emi
Power MOSFET, N-Channel, QFET®, 900 V, 6 A, 2.3 Ω, TO-220F
***ure Electronics
N-Channel 900 V 2.3 Ohm Through Hole Mosfet - TO-220F
***ical
Trans MOSFET N-CH 900V 6A 3-Pin(3+Tab) TO-220FP Rail
***enic
900V 6A 56W 2.3´Î@10V3A 5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
***ment14 APAC
MOSFET, N CH, 900V, 6A, TO-220F-3; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Source Voltage Vds:900V; On Resistance
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: TO-220 Polarity: N Variants: Enhancement mode Power dissipation: 56 W
*** Stop Electro
Power Field-Effect Transistor, 6A I(D), 900V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***nell
MOSFET, N, 900V; Transistor Polarity: N Channel; Continuous Drain Current Id: 6A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 2.3ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 56W; Transistor Case Style: TO-220F; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -55°C; Termination Type: Through Hole; Transistor Type: Enhancement; Voltage Vds Typ: 900V; Voltage Vgs Rds on Measurement: 10V
***icroelectronics
N-channel 900 V, 1.56 Ohm, 5.8 A TO-220FP Zener-protected SuperMESH(TM) Power MOSFET
***ure Electronics
Single N-Channel 900 V 2 Ohm 60.5 nC 30 W Silicon Flange Mount Mosfet - TO-220FP
***ical
Trans MOSFET N-CH 900V 5.8A 3-Pin(3+Tab) TO-220FP Tube
***nell
MOSFET, N, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.8A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 1.56ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipa
***r Electronics
Power Field-Effect Transistor, 5.8A I(D), 900V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***emi
Power MOSFET, N-Channel, QFET®, 900 V, 6.3 A, 1.9 Ω, TO-220F
***Yang
Trans MOSFET N-CH 900V 6.3A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
***r Electronics
Power Field-Effect Transistor, 6.3A I(D), 900V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***icroelectronics
N-channel 800 V, 1.9 Ohm, 4.3 A, Zener-protected SuperMESH(TM) Power MOSFET in TO-220FP package
*** Source Electronics
Trans MOSFET N-CH 800V 4.3A 3-Pin(3+Tab) TO-220FP Tube / MOSFET N-CH 800V 4.3A TO-220FP
***ark
N CHANNEL MOSFET, 800V, 4.3A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:4.3A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V RoHS Compliant: Yes
Parte # Mfg. Descrizione Azione Prezzo
FQPF6N80CT
DISTI # FQPF6N80CT-ND		ON SemiconductorMOSFET N-CH 800V 5.5A TO-220F
RoHS: Compliant
Min Qty: 1
Container: Tube		757In Stock
  • 500:$1.3296
  • 100:$1.7095
  • 10:$2.1270
  • 1:$2.3600
FQPF6N80CT
DISTI # FQPF6N80CT		ON SemiconductorTrans MOSFET N-CH 800V 5.5A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube (Alt: FQPF6N80CT)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$0.8239
  • 2000:$0.8189
  • 4000:$0.8079
  • 6000:$0.7979
  • 10000:$0.7779
FQPF6N80CT
DISTI # FQPF6N80CT		ON SemiconductorTrans MOSFET N-CH 800V 5.5A 3-Pin(3+Tab) TO-220F Rail (Alt: FQPF6N80CT)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€1.3049
  • 10:€1.0679
  • 25:€0.9129
  • 50:€0.8289
  • 100:€0.8159
  • 500:€0.8029
  • 1000:€0.7909
FQPF6N80CTFairchild Semiconductor CorporationPower Field-Effect Transistor, 5.5A I(D), 800V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		70
  • 1000:$1.1800
  • 500:$1.2400
  • 100:$1.2900
  • 25:$1.3500
  • 1:$1.4500
FQPF6N80CT
DISTI # 512-FQPF6N80CT		ON SemiconductorMOSFET 800V N-Ch Adv Q-FET C-Series
RoHS: Compliant		734
  • 1:$2.0400
  • 10:$1.7300
  • 100:$1.3900
  • 500:$1.2100
  • 1000:$1.0100
  • 2000:$0.9330
  • 5000:$0.8980
Immagine Parte # Descrizione
FQP6N80C

Mfr.#: FQP6N80C

OMO.#: OMO-FQP6N80C

 MOSFET 800V N-Ch Q-FET advance C-Series
RC2512FK-0718R2L

Mfr.#: RC2512FK-0718R2L

OMO.#: OMO-RC2512FK-0718R2L-YAGEO

 Res Thick Film 2512 18.2 Ohm 1% 1W ±100ppm/C Molded SMD Embossed T/R
FQP6N80C

Mfr.#: FQP6N80C

OMO.#: OMO-FQP6N80C-ON-SEMICONDUCTOR

 MOSFET N-CH 800V 5.5A TO-220
Disponibilità
Azione:
732
Su ordine:
2715
Inserisci la quantità:
Il prezzo attuale di FQPF6N80CT è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
2,00 USD
2,00 USD
10
1,69 USD
16,90 USD
100
1,36 USD
136,00 USD
500
1,18 USD
590,00 USD
1000
0,99 USD
990,00 USD
2000
0,92 USD
1 834,00 USD
5000
0,88 USD
4 415,00 USD
10000
0,85 USD
8 500,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
Iniziare con
Prodotti più recenti
  • Gate Drivers
    Gate Drivers
    The ON Semiconductor IGBT / MOSFET drive optocoupler series provides isolation for safety regulations.
  • NCP137 700 mA LDO Regulators
    NCP137 700 mA LDO Regulators
    ON Semiconductor's NCP137 700 mA very low dropout bias rail regulators are ideal for space constrained, noise sensitive applications.
  • Compare FQPF6N80CT
    Compare FQPF6N80CT
    FQPF6N80C vs FQPF6N80C2SK4013 vs FQPF6N80C6N80C
  • NCP114 Low Dropout Regulators
    NCP114 Low Dropout Regulators
    ON Semiconductor's NCP114 is a high performance, 300 mA, low dropout, linear regulator. This device delivers very high PSRR (over 75 dB at 1 kHz) and excellent dynamic performance as load/li
  • LC717A00AR Touch Sensor
    LC717A00AR Touch Sensor
    These high performance Capacitance-Digital-Converter LSI for electrostatic capacitive touch sensors feature 8-input capacitance.
  • FDMQ86530L Quad-MOSFET
    FDMQ86530L Quad-MOSFET
    ON Semiconductor’s FDMQ86530L solution improves the conduction loss and efficiency of the conventional diode bridge, providing a ten-fold improvement in power dissipation.
More Newest Products
Top