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CMUDM7001 TR

CMUDM7001 TR
Mfr. #:
CMUDM7001 TR
Produttore:
Central Semiconductor
Descrizione:
MOSFET N-Ch Enh Mode FET 20Vds 10Vgs 250mW
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
CMUDM7001 TR Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
CMUDM7001 TR maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Semiconduttore centrale
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
SOT-523
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
20 V
Id - Corrente di scarico continua:
100 mA
Rds On - Resistenza Drain-Source:
900 mOhms
Vgs th - Tensione di soglia gate-source:
600 mV
Vgs - Tensione Gate-Source:
10 V
Qg - Carica cancello:
566 pC
Temperatura di esercizio minima:
- 65 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
250 mW
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
UltraMini
Confezione:
Bobina
Serie:
CMUDM7
Tipo di transistor:
1 N-Channel
Marca:
Semiconduttore centrale
Tipologia di prodotto:
MOSFET
Quantità confezione di fabbrica:
3000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
75 ns
Tempo di ritardo di accensione tipico:
50 ns
Parte # Alias:
CMUDM7001 PBFREE TR
Unità di peso:
0.000071 oz
Tags
CMUDM7001, CMUDM700, CMUDM70, CMUDM7, CMUDM, CMUD, CMU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 20V 100mA 3-Pin SOT-523 T/R
***ark
Trans Mosfet N-Ch 20V 0.23A 3-Pin Sot-523 T/r Rohs Compliant: Yes
***ure Electronics
N-Channel 20 V 3 Ohm SMT Enhancement Mode Mosfet - SOT-523
***ment14 APAC
MOSFET, N-CH, 20V, SOT-523-3; Transistor Polarity:N Channel; Continuous Drain Current Id:230mA; Source Voltage Vds:20V; On Resistance
***el Electronic
Transistors - FETs, MOSFETs - Single 1 (Unlimited) SOT-523 Surface Mount MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 3 Ω @ 100mA, 4.5V 230mA Ta -55°C~150°C TJ MOSFET N-CH 20V 230MA SOT523
***nell
MOSFET, N-CH, 20V, SOT-523-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 230mA; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 1.8ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 300mW; Transistor Case Style: SOT-523; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***itex
Transistor MOSFET NTR4003NT1G, SOT23, ON Semi
***ical
Trans MOSFET N-CH 20V 0.63A Automotive 3-Pin SOT-523 T/R
***ure Electronics
N-Channel 20 V 400 mOhm Surface Mount Enhancement Mode Mosfet - SOT-523
***ment14 APAC
MOSFET, N CH, 20V, SOT-523; Transistor Polarity:N Channel; Continuous Drain Current Id:630mA; Source Voltage Vds:20V; On Resistance
***nell
MOSFET, N CH, 20V, SOT-523; Transistor Polarity: N Channel; Continuous Drain Current Id: 630mA; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.3ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 280mW; Transistor Case Style: SOT-523; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***ure Electronics
P-Channel 20 V 495 mOhm 1.54 nC Surface Mount Enhancement Mode Mosfet - SOT-523
***ical
Trans MOSFET P-CH 20V 0.65A Automotive 3-Pin SOT-523 T/R
***el Electronic
Transistors - FETs, MOSFETs - Single 1 (Unlimited) SOT-523 Surface Mount MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 495m Ω @ 400mA, 4.5V 590mA Ta -55°C~150°C TJ MOSFET P-CH 20V 0.59A SOT523
***ark
Transistor Polarity:p Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:650Ma; On Resistance Rds(On):0.495Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:700Mv Rohs Compliant: No
***emi
N-Channel MOSFET, Enhancement Mode, 60V, 115mA, 2Ω
*** Source Electronics
Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-523FL T/R / MOSFET N-CH 60V 115MA SOT-523F
***ure Electronics
N-Channel 60 V 7.5 Ohm SMT Enhancement Mode Field Transistor SOT-523F
***nell
MOSFET, N CH, 60V, 115MA, SOT-523F-3; Transistor Polarity:N Channel; Continuous Drain Current Id:115mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1.6ohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs:1.76V; Power Dissipation Pd:200mW; Operating Temperature Max:150°C; Transistor Case Style:SOT-523F; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
***r Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
***emi
NPN Epitaxial Silicon Transistor with Bias Resistor
***Yang
Trans Digital BJT NPN 50V 100mA 3-Pin SOT-523F T/R - Tape and Reel
***el Electronic
FAIRCHILD SEMICONDUCTOR FJY3002R Bipolar (BJT) Single Transistor, NPN, 50 V, 250 MHz, 200 mW, 100 mA, 30 hFE
***rchild Semiconductor
Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design.
***ment14 APAC
TRANSISTOR, DIGITAL NPN SOT-523F; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency Typ ft:250MHz; Power Dissipation Pd:200mW; DC Collector Current:100mA; DC Current Gain hFE:30; Transistor Case Style:SOT-523; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Collector Emitter Voltage Vces:300mV; Current Ic Continuous a Max:100mA; Gain Bandwidth ft Typ:250MHz; Hfe Min:30; Package / Case:SOT-523F; Power Dissipation Pd:200mW; Termination Type:SMD; Transistor Type:Bias Resistor (BRT); Voltage Vcbo:50V; Voltage Vi on:3V
***S.I.T. Europe - USA - Asia
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
***emi
NPN Epitaxial Silicon Transistor with Bias Resistor
***et Europe
Trans Digital BJT NPN 50V 100mA 3-Pin SOT-523F T/R
***rchild Semiconductor
Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design.
***ment14 APAC
TRANSISTOR, DIGITAL NPN SOT-523F; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Power Dissipation Pd:200mW; DC Collector Current:100mA; DC Current Gain hFE:56; Transistor Case Style:SOT-523; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:300mV; Current Ic Continuous a Max:100mA; Gain Bandwidth ft Typ:250MHz; Hfe Min:56; Package / Case:SOT-523F; Power Dissipation Pd:200mW; Termination Type:SMD; Transistor Type:Bias Resistor (BRT); Voltage Vcbo:50V; Voltage Vi on:3V
CxxDM Surface Mount Enhancement-Mode MOSFETs
Central Semiconductor CxxDM Surface Mount Enhancement-Mode MOSFETs are designed for high speed pulsed amplifier and driver applications. Central Semiconductor CxxDM Surface Mount Enhancement-Mode MOSFETs offer a very low rDS(ON) and low threshold voltage. The CMLDM5757 consists of dual P-channel enhancement-mode silicon MOSFETs. The CMLDM3757 consists of complementary N-channel and P-channel enhancement-mode silicon MOSFETs. The CMPDM7002AHC is a high current version of the 2N7002A enhancement-mode N-channel MOSFET. And the CEDM7001 is an N-channel enhancement-mode silicon MOSFET, manufactured with the N-channel DMOS process. CEDM8004VL is a P-Channel Enhancement-mode MOSFET, manufactured by the P-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. CEDM7004VL is an N-Channel Enhancement-mode MOSFET, manufactured by the N-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. Learn more
Parte # Mfg. Descrizione Azione Prezzo
CMUDM7001 TR
DISTI # CMUDM7001CT-ND		Central Semiconductor CorpMOSFET N-CH 20V 0.1A SOT-523
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2424In Stock
  • 1000:$0.2697
  • 500:$0.3490
  • 100:$0.4759
  • 10:$0.6340
  • 1:$0.7500
CMUDM7001 TR
DISTI # CMUDM7001DKR-ND		Central Semiconductor CorpMOSFET N-CH 20V 0.1A SOT-523
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2424In Stock
  • 1000:$0.2697
  • 500:$0.3490
  • 100:$0.4759
  • 10:$0.6340
  • 1:$0.7500
CMUDM7001 TR
DISTI # CMUDM7001TR-ND		Central Semiconductor CorpMOSFET N-CH 20V 0.1A SOT-523
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 3000:$0.2387
CMUDM7001 TR
DISTI # CMUDM7001 TR		Central Semiconductor CorpTrans MOSFET N-CH 20V 100mA 3-Pin SOT-523 T/R - Tape and Reel (Alt: CMUDM7001 TR)
Min Qty: 6000
Container: Reel		Americas - 0
    CMUDM7001 TR
    DISTI # 610-CMUDM7001TR    		Central Semiconductor CorpMOSFET N-Ch Enh Mode FET 20Vds 10Vgs 250mW
    RoHS: Compliant    		1899
    • 1:$0.6000
    • 10:$0.5060
    • 100:$0.3180
    • 1000:$0.2390
    • 3000:$0.2030
    • 9000:$0.1900
    • 24000:$0.1800
    • 45000:$0.1750
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    Disponibilità
    Azione:
    Available
    Su ordine:
    1984
    Inserisci la quantità:
    Il prezzo attuale di CMUDM7001 TR è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    0,60 USD
    0,60 USD
    10
    0,51 USD
    5,06 USD
    100
    0,32 USD
    31,80 USD
    1000
    0,24 USD
    239,00 USD
    A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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