IRF7907PBF

IRF7907PBF
Mfr. #:
IRF7907PBF
Produttore:
Infineon Technologies
Descrizione:
MOSFET 2N-CH 30V 9.1A/11A 8SOIC
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IRF7907PBF Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF7907PBF DatasheetIRF7907PBF Datasheet (P4-P6)IRF7907PBF Datasheet (P7-P9)IRF7907PBF Datasheet (P10)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
Tecnologie Infineon
categoria di prodotto
FET - Array
Serie
HEXFETR
Confezione
Imballaggio alternativo del tubo
Unità di peso
0.019048 oz
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
8-SOIC (0.154", 3.90mm Width)
Tecnologia
si
Temperatura di esercizio
-55°C ~ 150°C (TJ)
Tipo di montaggio
Montaggio superficiale
Numero di canali
2 Channel
Pacchetto-dispositivo-fornitore
8-SO
Configurazione
Dual
Tipo FET
2 N-Channel (Dual)
Potenza-Max
2W
Tipo a transistor
2 N-Channel
Drain-to-Source-Voltage-Vdss
30V
Ingresso-Capacità-Ciss-Vds
850pF @ 15V
Funzione FET
Porta livello logico
Corrente-Continuo-Scarico-Id-25°C
9.1A, 11A
Rds-On-Max-Id-Vgs
16.4 mOhm @ 9.1A, 10V
Vgs-th-Max-Id
2.35V @ 25μA
Gate-Carica-Qg-Vgs
10nC @ 4.5V
Pd-Power-Dissipazione
2.0 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
3.4 ns 5.3 ns
Ora di alzarsi
9.3 ns 14 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
9.1 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Rds-On-Drain-Source-Resistenza
20.5 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
8 ns 13 ns
Tempo di ritardo all'accensione tipico
6 ns 8 ns
Qg-Gate-Carica
6.7 nC
Modalità canale
Aumento
Tags
IRF7907, IRF790, IRF79, IRF7, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, Power;N-Ch;VDSS 30V;ID 9.1 A (Control FET), 11 A (Synchronous FET);SO-8
***ernational Rectifier
30V Dual N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package
***p One Stop Japan
Trans MOSFET N-CH 30V 9.1A/11A 8-Pin SOIC Tube
***ical
Trans MOSFET N-CH 30V 9.1A/11A 8-Pin SOIC T/R
***Components
MOSFET N-Channel 30V 9.1A/11A SOIC8
***i-Key
MOSFET N-CHAN DUAL 30V 8-SOIC
***ronik
2N-CH 30V 9,1A 11,8mOhm SO8 RoHSconf
***ineon
Benefits: RoHS Compliant; Low RDS(on); Low Thermal resistance to PCB; Compatible with Existing Surface Mount Techniques; Low RDS(ON) at 4.5V VGS; Very Low Gate Charge; Dual N-Channel MOSFET
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:11A; On Resistance, Rds(on):11.8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SO-8 ;RoHS Compliant: Yes
***nell
MOSFET, NN; Transistor Type:MOSFET; Transistor Polarity:Dual N; Voltage, Vds Typ:30V; Current, Id Cont:11A; Resistance, Rds On:11.8mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.8V; Case Style:SOIC; Termination Type:SMD; Current, Id Cont N Channel 2:9.1A; Current, Id Cont N Channel 3:11A; Resistance, Rds on N Channel 1:13.7ohm; Resistance, Rds on N Channel 2:9.8ohm
***ment14 APAC
MOSFET,NN CH,30V,9.1A,SO8; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:11A; Drain Source Voltage Vds:30V; Module Configuration:Dual; On Resistance Rds(on):9.8mohm; Power Dissipation Pd:2W
Parte # Mfg. Descrizione Azione Prezzo
IRF7907PBF
DISTI # IRF7907PBF-ND
Infineon Technologies AGMOSFET 2N-CH 30V 9.1A/11A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Tube
Limited Supply - Call
    IRF7907PBF
    DISTI # 70017286
    Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 30V,ID 9.1 A (Control FET),11 A (Synchronous FET),SO-8
    RoHS: Compliant
    0
    • 3800:$1.3400
    • 7600:$1.3130
    • 19000:$1.2730
    • 38000:$1.2190
    • 95000:$1.1390
    IRF7907PBF
    DISTI # 942-IRF7907PBF
    Infineon Technologies AGMOSFET 30V DUAL N-CH HEXFET 20V VGS MAX
    RoHS: Compliant
    0
      IRF7907PBFInternational Rectifier 2849
        IRF7907PBF
        DISTI # 1843031
        Infineon Technologies AGMOSFET,NN CH,30V,9.1A,SO8
        RoHS: Compliant
        0
        • 1:$1.7200
        • 10:$1.5300
        • 100:$1.1900
        • 500:$0.9820
        • 1000:$0.7760
        Immagine Parte # Descrizione
        IRF7904TRPBF

        Mfr.#: IRF7904TRPBF

        OMO.#: OMO-IRF7904TRPBF

        MOSFET MOSFT DUAL NCh 30V 7.6A
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        Mfr.#: IRF7946TRPbF

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        MOSFET 40V 198A 1.5mOhm 141nC StrongIRFET
        IRF7905PBF

        Mfr.#: IRF7905PBF

        OMO.#: OMO-IRF7905PBF

        MOSFET 30V DUAL N-CH HEXFET 20V VGS MAX
        IRF7901D1TR

        Mfr.#: IRF7901D1TR

        OMO.#: OMO-IRF7901D1TR-INFINEON-TECHNOLOGIES

        MOSFET 2N-CH 30V 6.2A 8SOIC
        IRF7902TRPBF  28K

        Mfr.#: IRF7902TRPBF 28K

        OMO.#: OMO-IRF7902TRPBF-28K-1190

        Nuovo e originale
        IRF7904TRPBF-1

        Mfr.#: IRF7904TRPBF-1

        OMO.#: OMO-IRF7904TRPBF-1-1190

        MOSFET 2N-CH 30V 7.6A/11A 8-SOIC
        IRF7907PBF

        Mfr.#: IRF7907PBF

        OMO.#: OMO-IRF7907PBF-INFINEON-TECHNOLOGIES

        MOSFET 2N-CH 30V 9.1A/11A 8SOIC
        IRF7907PBF-1

        Mfr.#: IRF7907PBF-1

        OMO.#: OMO-IRF7907PBF-1-1190

        Nuovo e originale
        IRF7907TRPBF

        Mfr.#: IRF7907TRPBF

        OMO.#: OMO-IRF7907TRPBF-INFINEON-TECHNOLOGIES

        MOSFET 2N-CH 30V 9.1A/11A 8-SOIC
        IRF7902TRPBF

        Mfr.#: IRF7902TRPBF

        OMO.#: OMO-IRF7902TRPBF-INFINEON-TECHNOLOGIES

        RF Bipolar Transistors MOSFET MOSFT DUAL NCh 30V 9.7A
        Disponibilità
        Azione:
        Available
        Su ordine:
        2500
        Inserisci la quantità:
        Il prezzo attuale di IRF7907PBF è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
        Prezzo di riferimento (USD)
        Quantità
        Prezzo unitario
        est. Prezzo
        1
        1,71 USD
        1,71 USD
        10
        1,62 USD
        16,23 USD
        100
        1,54 USD
        153,77 USD
        500
        1,45 USD
        726,10 USD
        1000
        1,37 USD
        1 366,80 USD
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