We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| FMR28N50E DISTI # FE0000000001053 | Fuji Electric Co Ltd | Power Field-Effect Transistor, 28AI(D),500V,0.19ohm, 1-Element, N-Channel,Silicon,Metal-oxideSemiconductor FET RoHS: Compliant | 0 in Stock0 on Order | |
| FMR28N50ES DISTI # FE0000000000241 | Fuji Electric Co Ltd | 28A, 500V, 0.19ohm, N-CHANNEL, Si, POWER, MOSFET RoHS: Compliant | 0 in Stock0 on Order |
|
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: FMR202 OMO.#: OMO-FMR202-1190 |
Nuovo e originale |
|
|
Mfr.#: FMR203 OMO.#: OMO-FMR203-1190 |
Nuovo e originale |
|
|
Mfr.#: FMR21N50ES OMO.#: OMO-FMR21N50ES-1190 |
Power Field-Effect Transistor, 21A I(D),500V,0.27ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
|
|
Mfr.#: FMR21N55G OMO.#: OMO-FMR21N55G-1190 |
Nuovo e originale |
|
|
Mfr.#: FMR23N50E OMO.#: OMO-FMR23N50E-1190 |
Power Field-Effect Transistor, 23AI(D),500V,0.245ohm, 1-Element,N-Channel,Silicon,Metal-oxide Semiconductor FET |
|
|
Mfr.#: FMR23N50ES OMO.#: OMO-FMR23N50ES-1190 |
Power Field-Effect Transistor, 23A I(D),500V,0.245ohm, 1-Element, N-Channel,Silicon,Metal-oxide Semiconductor FET |
|
|
Mfr.#: FMR23N57E OMO.#: OMO-FMR23N57E-1190 |
Nuovo e originale |
|
|
Mfr.#: FMR23N57E,23N57E OMO.#: OMO-FMR23N57E-23N57E-1190 |
Nuovo e originale |
|
|
Mfr.#: FMR23N60E OMO.#: OMO-FMR23N60E-1190 |
Power Field-Effect Transistor,23AI(D),600V,0.28ohm, 1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET |
|
|
Mfr.#: FMR28N50E OMO.#: OMO-FMR28N50E-1190 |
Power Field-Effect Transistor, 28AI(D),500V,0.19ohm, 1-Element, N-Channel,Silicon,Metal-oxideSemiconductor FET |