A1P50S65M2

Mfr. #:: A1P50S65M2
Produttore:: STMicroelectronics
Descrizione:: IGBT Modules ACEPACK 1 sixpack topology, 650 V, 50 A trench gate field-stop IGBT M series, soft diode and NTC
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: A1P50S65M2 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
Pagamento:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:: A1P50S65M2 maggiori informazioni A1P50S65M2 Product Details

Attributo del prodotto
Valore attributo

Produttore:: STMicroelectronics

Categoria di prodotto:: Moduli IGBT

RoHS:: Y

Prodotto:: Moduli di silicio IGBT

Configurazione:: Confezione da sei

Tensione collettore-emettitore VCEO Max:: 650 V

Tensione di saturazione collettore-emettitore:: 2.3 V

Corrente continua del collettore a 25 C:: 50 A

Corrente di dispersione gate-emettitore:: 500 nA

Pd - Dissipazione di potenza:: 208 W

Pacchetto/custodia:: ACEPACK-1

Temperatura di esercizio minima:: - 40 C

Temperatura massima di esercizio:: + 150 C

Serie:: A1P50S65M2

Marca:: STMicroelectronics

Stile di montaggio:: Montaggio su telaio

Tensione massima dell'emettitore di gate:: 20 V

Tipologia di prodotto:: Moduli IGBT

Quantità confezione di fabbrica:: 18

sottocategoria:: IGBT

Nome depositato:: ACEPACK

Tags: A1P

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

A1P50S65M2 Descrizione

***ure Electronics: A1P50S65M2 Series 650 V 50 A 208 W Trench Gate Field-Stop IGBT - ACEPACK 1

***ical: Trans IGBT Module N-CH 650V 50A 208000mW 22-Pin ACEPACK-1 Frame

***r Electronics: Insulated Gate Bipolar Transistor, 50A I(C), 650V V(BR)CES, N-Channel

***et: Transistor IGBT Module N-CH 650V 50A ±20V Screw

*** Services: CoC and 2-years warranty / RFQ for pricing

***el Electronic: IC SUPERVISOR 1 CHANNEL SOT143-4

***i-Key: IGBT MOD 650V 50A 208W ACEPACK1

***nell: IGBT MOD, NPN, 650V, 50A, 208W, MODULE; Transistor Polarity: NPN; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 1.95V; Power Dissipation Pd: 208W; Collector Emitter Voltage V(br)ceo: 650V; Transisto

A1P50S65M2 Maggiori informazioni

ACEPACK™ IGBT Modules: STMicroelectronics ACEPACK™ IGBT Modules are a family of new plastic power modules developed to address power management solutions and industrial applications. The ACEPACK™ 1 and ACEPACK™ 2 packages are introduced with both Converter Inverter Brake (CIB) and six-pack topologies that integrate the advanced trench-gate field-stop technologies. These ACEPACK IGBT-modules feature ACEPACK 1 or ACEPACK 2 power modules, integrated Negative Temperature Coefficient (NTC), and CIB or six-pack topology. These modules cover the appropriate use of the new IGBT-technology by representing the best compromise between conduction and switching-loss to maximize efficiency by 20kHz. These IGBT modules are ideal for application in industrial motor drives, solar panels, welding, and inverters.Learn More

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
A1P50S65M2 DISTI # V99:2348_19421749	STMicroelectronics	-	12	250:$26.4100 100:$26.7200 50:$27.1100 25:$31.2400 10:$32.2400 5:$37.1200 1:$37.4900
A1P50S65M2 DISTI # V36:1790_19103894	STMicroelectronics	-	0	36000:$22.7100 18000:$22.7200 3600:$24.3000 360:$27.9700 36:$28.6400
A1P50S65M2 DISTI # 497-18064-ND	STMicroelectronics	IGBT TRENCH 650V 50A ACEPACK1 RoHS: Not compliant Min Qty: 1 Container: Tray	31In Stock	108:$29.6400 36:$33.1500 18:$34.7100 1:$37.6400
A1P50S65M2 DISTI # 32349889	STMicroelectronics	-	36	1:$26.6919
A1P50S65M2 DISTI # 32363895	STMicroelectronics	-	12	1:$37.4900
A1P50S65M2 DISTI # A1P50S65M2	STMicroelectronics	Trans IGBT Module N-CH 650V 50A ±20V Screw Mount Tray (Alt: A1P50S65M2) RoHS: Compliant Min Qty: 1 Container: Tray	Europe - 2	1000:€26.3900 500:€26.8900 100:€27.2900 50:€27.6900 25:€28.1900 10:€29.2900 1:€30.0900
A1P50S65M2 DISTI # A1P50S65M2	STMicroelectronics	Trans IGBT Module N-CH 650V 50A ±20V Screw Mount Tray - Trays (Alt: A1P50S65M2) RoHS: Compliant Min Qty: 36 Container: Tray	Americas - 0	360:$23.3900 180:$23.9900 108:$24.5900 72:$25.2900 36:$25.5900
A1P50S65M2-F DISTI # A1P50S65M2-F	STMicroelectronics	Trans IGBT Module N-CH 650V 50A ±20V Screw Mount Tray - Trays (Alt: A1P50S65M2-F) RoHS: Compliant Min Qty: 36 Container: Tray	Americas - 0	360:$23.3900 180:$23.9900 108:$24.5900 72:$25.2900 36:$25.5900
A1P50S65M2-F DISTI # A1P50S65M2-F	STMicroelectronics	Trans IGBT Module N-CH 650V 50A ±20V Screw Mount Tray (Alt: A1P50S65M2-F) RoHS: Compliant Min Qty: 1 Container: Tray	Europe - 0	1000:€25.8900 500:€26.2900 100:€26.7900 50:€27.1900 25:€27.5900 10:€28.6900 1:€29.4900
A1P50S65M2 DISTI # 84AC0868	STMicroelectronics	IGBT MOD, NPN, 650V, 50A, 208W, MODULE,Transistor Polarity:NPN,DC Collector Current:50A,Collector Emitter Saturation Voltage Vce(on):1.95V,Power Dissipation Pd:208W,Collector Emitter Voltage V(br)ceo:650V,Transistor Case RoHS Compliant: Yes	40	250:$28.5600 100:$29.9400 50:$31.7100 25:$33.4900 10:$35.0600 5:$37.6200 1:$38.0200
A1P50S65M2-F DISTI # 65AC5841	STMicroelectronics	PTD HIGH VOLTAGE	0	1:$24.3800
A1P50S65M2	STMicroelectronics	A1P50S65M2 Series 650 V 50 A 208 W Trench Gate Field-Stop IGBT - ACEPACK 1 RoHS: Compliant	57Bulk	1:$37.3100 2:$35.5500 5:$33.3700 10:$31.8000 25:$29.8400
A1P50S65M2 DISTI # 511-A1P50S65M2	STMicroelectronics	IGBT Modules ACEPACK 1 sixpack topology, 650 V, 50 A trench gate field-stop IGBT M series, soft diode and NTC RoHS: Compliant	0	1:$37.6400 5:$37.2500 10:$34.7100 25:$33.1600 100:$29.6400 250:$28.2800
A1P50S65M2-F DISTI # 511-A1P50S65M2-F	STMicroelectronics	IGBT Modules ACEPACK 1 sixpack topology, 650 V, 50 A trench gate field-stop IGBT M series, soft diode and NTC	0	1:$37.6400 5:$37.2500 10:$34.7100 25:$33.1600 100:$29.6400 250:$28.2800
A1P50S65M2 DISTI # 2980976	STMicroelectronics	IGBT MOD, NPN, 650V, 50A, 208W, MODULE	40	100:£20.5000 50:£22.2700 10:£24.0300 5:£27.0000 1:£27.2800
A1P50S65M2 DISTI # 2980976	STMicroelectronics	IGBT MOD, NPN, 650V, 50A, 208W, MODULE RoHS: Compliant	40	1:$59.5900

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: A1P50S65M2 OMO.#: OMO-A1P50S65M2	IGBT Modules ACEPACK 1 sixpack topology, 650 V, 50 A trench gate field-stop IGBT M series, soft diode and NTC
	Mfr.#: A1P50S65M2-F OMO.#: OMO-A1P50S65M2-F	IGBT Modules ACEPACK 1 sixpack topology, 650 V, 50 A trench gate field-stop IGBT M series, soft diode and NTC
	Mfr.#: A1P50S65M2 OMO.#: OMO-A1P50S65M2-STMICROELECTRONICS	IGBT TRENCH 650V 50A ACEPACK1
	Mfr.#: A1P50S65M2-F OMO.#: OMO-A1P50S65M2-F-1190	Trans IGBT Module N-CH 650V 50A ±20V Screw Mount Tray - Trays (Alt: A1P50S65M2-F)

Disponibilità

Azione:: Available
Su ordine:: 3000
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Il prezzo attuale di A1P50S65M2 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~37,64 USD~~; ~~37,64 USD~~

5: ~~37,25 USD~~; ~~186,25 USD~~

10: ~~34,71 USD~~; ~~347,10 USD~~

25: ~~33,16 USD~~; ~~829,00 USD~~

100: ~~29,64 USD~~; ~~2 964,00 USD~~

250: ~~28,28 USD~~; ~~7 070,00 USD~~

A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.

Iniziare con

A1P 36

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A1P50S65M2

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes