SUP90140E-GE3

Mfr. #:: SUP90140E-GE3
Produttore:: Vishay / Siliconix
Descrizione:: MOSFET 200V Vds 20V Vgs TO-220
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: SUP90140E-GE3 Scheda dati
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HTML Datasheet:: SUP90140E-GE3 Datasheet SUP90140E-GE3 Datasheet (P4-P6)SUP90140E-GE3 Datasheet (P7-P8)
ECAD Model:

Attributo del prodotto
Valore attributo

Produttore:: Vishay

Categoria di prodotto:: MOSFET

RoHS:: Y

Tecnologia:: si

Stile di montaggio:: Foro passante

Pacchetto/custodia:: TO-220-3

Numero di canali:: 1 Channel

Polarità del transistor:: Canale N

Vds - Tensione di rottura Drain-Source:: 200 V

Id - Corrente di scarico continua:: 90 A

Rds On - Resistenza Drain-Source:: 13.8 mOhms

Vgs th - Tensione di soglia gate-source:: 2 V

Vgs - Tensione Gate-Source:: 20 V

Qg - Carica cancello:: 96 nC

Temperatura di esercizio minima:: - 55 C

Temperatura massima di esercizio:: + 175 C

Pd - Dissipazione di potenza:: 375 W

Configurazione:: Separare

Modalità canale:: Aumento

Nome depositato:: ThunderFET

Confezione:: Tubo

Serie:: SUP

Tipo di transistor:: 1 N-Channel

Marca:: Vishay / Siliconix

Transconduttanza diretta - Min:: 75 S

Tempo di caduta:: 80 ns

Tipologia di prodotto:: MOSFET

Ora di alzarsi:: 112 ns

Quantità confezione di fabbrica:: 500

sottocategoria:: MOSFET

Tempo di ritardo allo spegnimento tipico:: 35 ns

Tempo di ritardo di accensione tipico:: 13 ns

Unità di peso:: 0.063493 oz

Tags: SUP901, SUP90, SUP9, SUP

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Step1:
Vacuum Packaging with PL

Step2:
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Step3:
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SUP90140E-GE3 Descrizione

***el Electronic: VISHAY SUP90140E-GE3 MOSFET Transistor, N Channel, 90 A, 200 V, 0.0138 ohm, 10 V, 4 VNew

***ure Electronics: N-Channel 200 V 17 mOhm 375 W ThunderFET Power Mosfet - TO-220AB

***ical: Trans MOSFET N-CH 200V 90A 3-Pin(3+Tab) TO-220AB

***nell: MOSFET, N-CH, 200V, 90A, TO-220AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 90A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.0138ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V;

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 90A I(D), 200V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.3Ohm;ID 9.3A;TO-220AB;PD 82W;VGS +/-20V

***itex: Transistor: N-MOSFET; unipolar; 200V; 9A; 0.4ohm; 0.57W; -55+150 deg.C; THT; TO220

***ical: Trans MOSFET N-CH Si 200V 9.3A Automotive 3-Pin(3+Tab) TO-220AB Tube

***ure Electronics: Single N-Channel 200 V 0.3 Ohm 35 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 36 W

***roFlash: Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N, 200V, 9.5A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:9.3A; Drain Source Voltage Vds:200V; On Resistance Rds(on):300mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:82W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:9.3A; Junction to Case Thermal Resistance A:1.83°C/W; Package / Case:TO-220AB; Power Dissipation Pd:82W; Power Dissipation Pd:82W; Pulse Current Idm:37A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.15Ohm;ID 18A;TO-220AB;PD 150W;VGS +/-20V

***itex: Transistor: N-MOSFET; unipolar; 200V; 18A; 0.15ohm; 150W; -55+175 deg.C; THT; TO220

***eco: 200 Volt 18 Amp Single N-Channel HEXFET Power MOSFET TO-220 Fast Switching

***ure Electronics: Single N-Channel 200 V 0.15 Ohm 67 nC HEXFET® Power Mosfet - TO-220-3

***klin Elektronik: INFINEON THT MOSFET NFET 200V 18A 150mΩ 175°C TO-220 IRF640N-PBF

***ineon SCT: 200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

*** Electronics: IRF640NPBF Trans MOSFET N-CH 200V 18A 3-Pin (3+Tab) TO-220AB RoHS

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:18A; On Resistance, Rds(on):150mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 150 W

***roFlash: Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull

***nell: MOSFET, N, 200V, 18A, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:18A; Resistance, Rds On:0.15ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:72A; No. of Pins:3; Power Dissipation:150W; Power, Pd:150W; Thermal Resistance, Junction to Case A:1°C/W; Voltage, Vds Max:200V; Voltage, Vgs th Max:4V

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 19.7 Milliohms;ID 65A;TO-220AB;PD 330W

***ineon SCT: 200V Single N-Channel HEXFET Power MOSFET PDP Switch in a TO-220AB package, TO220-3, RoHS

*** Source Electronics: Trans MOSFET N-CH 200V 65A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 200V 65A TO-220AB

***ure Electronics: Single N-Channel 200 V 24 mOhm 98 nC HEXFET® Power Mosfet - TO-220-3

*** Stop Electro: Power Field-Effect Transistor, 65A I(D), 200V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N, 200V, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:65A; Drain Source Voltage Vds:200V; On Resistance Rds(on):19.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:140mJ; Capacitance Ciss Typ:4600pF; Cont Current Id @ 100°C:46A; Cont Current Id @ 25°C:65A; Current Id Max:65A; Package / Case:TO-220AB; Power Dissipation Pd:190W; Power Dissipation Pd:330W; Pulse Current Idm:260A; Rth:0.45; Termination Type:Through Hole; Voltage Vds:200V; Voltage Vds Typ:200V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 65 / Drain-Source Voltage (Vds) V = 200 / ON Resistance (Rds(on)) mOhm = 19.7 / Gate-Source Voltage V = 30 / Fall Time ns = 31 / Rise Time ns = 20 / Turn-OFF Delay Time ns = 21 / Turn-ON Delay Time ns = 33 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 175 / Package Type = TO-220AB / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 330

***ure Electronics: Single N-Channel 200 V 0.18 Ohms Flange Mount Power Mosfet - TO-220-3

***ical: Trans MOSFET N-CH 200V 18A 3-Pin (3+Tab) TO-220AB

*** Stop Electro: Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET TRANSISTOR N CH; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:200V; On Resistance Rds(on):180mohm; Rds(on) Test Voltage Vgs:10V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:18A; Package / Case:TO-220; Power Dissipation Pd:125W; Voltage Vds Typ:200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

*** Source Electronics: MOSFET N-CH 200V 9A TO-220AB / Trans MOSFET N-CH 200V 9A 3-Pin(3+Tab) TO-220AB

***ure Electronics: Single N-Channel 200 V 0.4 O 43 nC Power Mosfet - TO-220-3 (TO-220AB)

*** Electronics: Transistor: N-MOSFET; unipolar; 200V; 5.7A; 74W; TO220AB

*** electronic: Transistor MOSFET N-Ch. 9A/200V TO220

***ark: N Channel Mosfet, 200V, 9A; Transistor Polarity:n Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:9A; On Resistance Rds(On):0.4Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; No. Of Pins:3Pinsrohs Compliant: No

***roFlash: Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ure Electronics: Single N-Channel 200 V 1.5 Ohms Flange Mount Power Mosfet - TO-220AB

***ical: Trans MOSFET N-CH 200V 3.3A 3-Pin (3+Tab) TO-220AB

***enic: 200V 3.3A 1.5´Î@10V2A 36W 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS

*** Stop Electro: Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N, 200V, 3.3A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:3.3A; Drain Source Voltage Vds:200V; On Resistance Rds(on):1.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:36W; Transistor Case Style:TO-220AB; No. of Pins:3; Current Id Max:3.3A; Junction to Case Thermal Resistance A:3.5°C/W; Package / Case:TO-220AB; Power Dissipation Pd:36W; Power Dissipation Pd:36W; Pulse Current Idm:10A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
SUP90140E-GE3 DISTI # V99:2348_14664664	Vishay Intertechnologies	Trans MOSFET N-CH 200V 90A 3-Pin(3+Tab) TO-220AB	400	2500:$1.6250 500:$1.9850 100:$2.2820 25:$2.7110 10:$2.7650 1:$3.6465
SUP90140E-GE3 DISTI # V36:1790_14664664	Vishay Intertechnologies	Trans MOSFET N-CH 200V 90A 3-Pin(3+Tab) TO-220AB	0	500000:$1.6360 250000:$1.6370 50000:$1.6740 5000:$1.7230 500:$1.7300
SUP90140E-GE3 DISTI # SUP90140E-GE3-ND	Vishay Siliconix	MOSFET N-CH 200V 90A TO220AB RoHS: Compliant Min Qty: 1 Container: Tube	523In Stock	5000:$1.6128 2500:$1.6758 500:$2.0916 100:$2.4570 25:$2.8352 10:$2.9990 1:$3.3400
SUP90140E-GE3 DISTI # 25891398	Vishay Intertechnologies	Trans MOSFET N-CH 200V 90A 3-Pin(3+Tab) TO-220AB	400	4:$3.6465
SUP90140E-GE3 DISTI # SUP90140E-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 200V 90A 3-Pin TO-220AB (Alt: SUP90140E-GE3) RoHS: Compliant Min Qty: 1	Europe - 50	1000:€1.3900 50:€1.4900 100:€1.4900 500:€1.4900 25:€1.6900 10:€2.0900 1:€2.6900
SUP90140E-GE3 DISTI # SUP90140E-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 200V 90A 3-Pin TO-220AB - Tape and Reel (Alt: SUP90140E-GE3) RoHS: Not Compliant Min Qty: 500 Container: Reel	Americas - 0	3000:$1.4900 5000:$1.4900 1000:$1.5900 2000:$1.5900 500:$1.6900
SUP90140E-GE3 DISTI # 86Y1095	Vishay Intertechnologies	MOSFET, N-CH, 200V, 90A, TO-220AB-3,Transistor Polarity:N Channel,Continuous Drain Current Id:90A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.0138ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes	482	500:$2.2400 100:$2.3100 50:$2.4800 25:$2.6400 10:$2.8100 1:$3.3900
SUP90140E-GE3 DISTI # 78-SUP90140E-GE3	Vishay Intertechnologies	MOSFET 200V Vds 20V Vgs TO-220 RoHS: Compliant	667	1:$3.3600 10:$2.7800 100:$2.2900 250:$2.2200 500:$1.9900 1000:$1.6700 2500:$1.5900 5000:$1.5300
SUP90140EGE3	Vishay Intertechnologies	Power Field-Effect Transistor, 90A I(D), 200V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	500
SUP90140E-GE3 DISTI # 2576517	Vishay Intertechnologies	MOSFET, N-CH, 200V, 90A, TO-220AB-3 RoHS: Compliant	482	2500:$2.5400 500:$3.1600 100:$3.7100 25:$4.2800 10:$4.5200 1:$5.0300
SUP90140E-GE3 DISTI # 2576517	Vishay Intertechnologies	MOSFET, N-CH, 200V, 90A, TO-220AB-3	494	500:£1.3800 250:£1.5200 100:£1.5800 10:£1.9100 1:£2.8800
SUP90140E-GE3	Vishay Intertechnologies	MOSFET 200V Vds 20V Vgs TO-220	Americas -

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Disponibilità

Azione:: 627
Su ordine:: 2610
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SUP90140E-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes