FDG313N

FDG313N
Mfr. #:
FDG313N
Produttore:
ON Semiconductor / Fairchild
Descrizione:
MOSFET SC70-6 N-CH 25V
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FDG313N Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
SOT-323-6
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
25 V
Id - Corrente di scarico continua:
950 mA
Rds On - Resistenza Drain-Source:
350 mOhms
Vgs - Tensione Gate-Source:
8 V
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
750 mW
Configurazione:
Separare
Modalità canale:
Aumento
Confezione:
Bobina
Altezza:
1.1 mm
Lunghezza:
2 mm
Prodotto:
MOSFET piccolo segnale
Serie:
FDG313N
Tipo di transistor:
1 N-Channel
Tipo:
FET
Larghezza:
1.25 mm
Marca:
ON Semiconductor / Fairchild
Transconduttanza diretta - Min:
1.5 S
Tempo di caduta:
8.5 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
8.5 ns
Quantità confezione di fabbrica:
3000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
17 ns
Tempo di ritardo di accensione tipico:
3 ns
Parte # Alias:
FDG313N_NL
Unità di peso:
0.000988 oz
Tags
FDG313, FDG31, FDG3, FDG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 25 V 450 mOhm Surface Mount Digital FET Mosfet - SC-70-6
*** Electronics
FAIRCHILD SEMICONDUCTOR FDG313N MOSFET Transistor, N Channel, 950 mA, 25 V, 450 mohm, 4.5 V, 800 mV
***ment14 APAC
MOSFET, N, SMD, 6-SC-70; Transistor Polarity:N Channel; Continuous Drain Current Id:950mA; Drain Source Voltage Vds:25V; On Resistance Rds(on):450mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV; Power Dissipation Pd:750mW; Transistor Case Style:SC-70; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Current Id Max:950mA; Package / Case:SC-70; Power Dissipation Pd:750mW; Termination Type:SMD; Voltage Vds Typ:25V; Voltage Vgs Max:800mV; Voltage Vgs Rds on Measurement:4.5V
***rchild Semiconductor
This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistor and small signal MOSFET.
***ser
MOSFETs- Power and Small Signal 25V 1.2A N-Channel No-Cancel/No-Return
***ponent Stockers USA
1000 mA 25 V N-CHANNEL Si SMALL SIGNAL MOSFET
***r Electronics
Small Signal Field-Effect Transistor, 1A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***or
MOSFET N-CH 25V 1A SC88/SC70-6
***r Electronics
Small Signal Field-Effect Transistor, 1A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ser
MOSFETs- Power and Small Signal 25V 1.2A N-Channel
***or
MOSFET N-CH 25V 1A SC88/SC70-6
***emi
P-Channel PowerTrench® MOSFET, 2.5V Specified, -1.2 A, 180 mΩ
***ment14 APAC
MOSFET, P; Transistor Polarity:P Channel; Continuous Drain Current Id:1.2A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):187mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:900mV; Power Dissipation Pd:750mW; Transistor Case Style:SC-70; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Current Id Max:1.2A; Package / Case:SC70; Power Dissipation Pd:750mW; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:-900mV; Voltage Vgs Rds on Measurement:8V
***rchild Semiconductor
This P-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.
***ark
MOSFET, N CH, 20V, 0.29OHM, 970mA, SOT-416-3; Transistor Polarity:N Channel; Con
***ure Electronics
N-Channel 20 V 350 mOhm 0.72 nC SMT TrenchMOS Low Level FET - SC-75
***ical
Trans MOSFET N-CH 20V 0.97A 3-Pin SC-75 T/R
***ponent Stockers USA
970 mA 20 V N-CHANNEL Si SMALL SIGNAL MOSFET
***peria
N-channel TrenchMOS extremely low level FET
***ure Electronics
Single N-Channel 20 V 0.25 Ohm 500 mW Silicon Surface Mount Mosfet - SOT-23
***ical
Trans MOSFET N-CH 20V 1.2A Automotive 3-Pin SC-59 T/R
***ser
Transistor - FET N-Channel 20V 1.2A
***des Inc SCT
N-Channel Mosfet, 20V VDS, 8±V VGS
***ark
Mosfet Bvdss: 8V~24V Sc59 T&r 3K
***(Formerly Allied Electronics)
N-Channel Enhancement Mode FET SC-59
***ment14 APAC
MOSFET, N CH, 20V, 1.2A, SC-59; Transistor Polarity:N Channel; Continuous Drain Current Id:1.2A; Drain Source Voltage Vds:20V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.2V; Power Dissipation Pd:500mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SC-59; No. of Pins:3; Current Id Max:4A; Package / Case:SC-59; Power Dissipation Pd:500mW; Termination Type:SMD; Transistor Type:Enhancement; Voltage Vds Typ:20V; Voltage Vgs Max:8V; Voltage Vgs Rds on Measurement:4.5V
***el Electronic
DIODES INC. - DMN100-7-F - MOSFET Transistor, N Channel, 1.1 A, 30 V, 0.24 ohm, 10 V, 3 V
***nell
MOSFET, N CH, 30V, 1.1A, SC-59; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.1A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.24ohm; Rd; Available until stocks are exhausted Alternative available
***ark
MOSFET, N CHANNEL, 30V, 1.1A, SC-59; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:1.1A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
Parte # Mfg. Descrizione Azione Prezzo
FDG313N
DISTI # FDG313NFSTR-ND
ON SemiconductorMOSFET N-CH 25V 0.95A SC70-6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
    FDG313N
    DISTI # FDG313NFSCT-ND
    ON SemiconductorMOSFET N-CH 25V 0.95A SC70-6
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      FDG313N
      DISTI # FDG313NFSDKR-ND
      ON SemiconductorMOSFET N-CH 25V 0.95A SC70-6
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        FDG313N_D87Z
        DISTI # FDG313N_D87Z-ND
        ON SemiconductorMOSFET N-CH 25V 0.95A SC70-6
        RoHS: Compliant
        Min Qty: 10000
        Container: Tape & Reel (TR)
        Limited Supply - Call
          FDG313N
          DISTI # FDG313N
          ON SemiconductorTrans MOSFET N-CH 25V 0.95A 6-Pin SC-70 T/R - Bulk (Alt: FDG313N)
          RoHS: Compliant
          Min Qty: 1087
          Container: Bulk
          Americas - 0
          • 10870:$0.2829
          • 5435:$0.2909
          • 3261:$0.2939
          • 2174:$0.2979
          • 1087:$0.2999
          FDG313N
          DISTI # 512-FDG313N
          ON SemiconductorMOSFET SC70-6 N-CH 25V
          RoHS: Compliant
          0
            FDG313N_D87Z
            DISTI # 512-FDG313N_D87Z
            ON SemiconductorMOSFET SC70-6 N-CH 25V
            RoHS: Compliant
            0
              FDG313NFairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 0.95A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
              RoHS: Compliant
              1655418
              • 1000:$0.3000
              • 500:$0.3200
              • 100:$0.3300
              • 25:$0.3500
              • 1:$0.3700
              FDG313NFairchild Semiconductor Corporation950 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET3000
              • 1112:$0.1400
              • 223:$0.1800
              • 1:$0.4000
              FDG313N
              DISTI # 8063371P
              ON SemiconductorMOSFETFAIRCHILDFDG313N, RL260
              • 200:£0.1280
              FDG313NFairchild Semiconductor Corporation 5521
                FDG313NFairchild Semiconductor Corporation 5609
                  FDG313NFairchild Semiconductor Corporation 2617
                    FDG313N
                    DISTI # 1471044
                    ON SemiconductorMOSFET, N, SMD, 6-SC-70
                    RoHS: Compliant
                    1
                    • 500:£0.2010
                    • 250:£0.2200
                    • 100:£0.2390
                    • 10:£0.4130
                    • 1:£0.5120
                    FDG313N
                    DISTI # 1471044RL
                    ON SemiconductorMOSFET, N, SMD, 6-SC-70
                    RoHS: Compliant
                    0
                    • 1:$1.1100
                    FDG313N
                    DISTI # 1471044
                    ON SemiconductorMOSFET, N, SMD, 6-SC-70
                    RoHS: Compliant
                    0
                    • 1:$1.1100
                    Immagine Parte # Descrizione
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                    OMO.#: OMO-FDGB0037A-1190

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                    FDG6301N-CUT TAPE

                    Mfr.#: FDG6301N-CUT TAPE

                    OMO.#: OMO-FDG6301N-CUT-TAPE-1190

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                    FDG6321C-CUT TAPE

                    Mfr.#: FDG6321C-CUT TAPE

                    OMO.#: OMO-FDG6321C-CUT-TAPE-1190

                    Nuovo e originale
                    Disponibilità
                    Azione:
                    Available
                    Su ordine:
                    1000
                    Inserisci la quantità:
                    Il prezzo attuale di FDG313N è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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