IRF7910PBF

IRF7910PBF
Mfr. #:
IRF7910PBF
Produttore:
Infineon Technologies
Descrizione:
MOSFET 2N-CH 12V 10A 8-SOIC
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IRF7910PBF Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF7910PBF DatasheetIRF7910PBF Datasheet (P4-P6)IRF7910PBF Datasheet (P7-P8)
ECAD Model:
Attributo del prodotto
Valore attributo
Tags
IRF791, IRF79, IRF7, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, Power;Dual N-Ch;VDSS 12V;RDS(ON) 11.5 Milliohms;ID 10A;SO-8;PD 2W;-55deg
***ical
Trans MOSFET N-CH 12V 10A 8-Pin SOIC Tube
***ernational Rectifier
12V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
***Components
MOSFET Dual N-Ch 12V 10A HEXFET SOIC8
***et Europe
Trans MOSFET N-CH 12V 10A 8-Pin SOIC
***i-Key
MOSFET N-CH 12V 10A 8-SOIC
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:12V; Continuous Drain Current, Id:10A; On Resistance, Rds(on):15mohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:8-SOIC ;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design; Dual N-Channel MOSFET
***nell
MOSFET, DUAL, NN, SO-8; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:12V; Current, Id Cont:10A; Resistance, Rds On:0.015ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:2V; Case Style:SOIC; Termination Type:SMD; Current, Idm Pulse:79A; Pin Configuration:1S1,2G1,3S2,4G2,(5&6)D2,(8&7)D1; Power, Pd:2W; Time, Fall:6.3ns; Time, Rise:22ns; Transistors, No. of:2; Voltage, Vds Max:12V; Voltage, Vgs Max:12V
***ment14 APAC
MOSFET, DUAL, NN, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:12V; On Resistance Rds(on):15mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:10A; Fall Time tf:6.3ns; No. of Transistors:2; Package / Case:SOIC; Pin Configuration:1S1,2G1,3S2,4G2,(5&6)D2,(8&7)D1; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:79A; Rise Time:22ns; Termination Type:SMD; Voltage Vds Typ:12V; Voltage Vgs Max:12V; Voltage Vgs Rds on Measurement:4.5V
Parte # Mfg. Descrizione Azione Prezzo
IRF7910PBF
DISTI # IRF7910PBF-ND
Infineon Technologies AGMOSFET 2N-CH 12V 10A 8-SOIC
RoHS: Compliant
Min Qty: 3800
Container: Tube
Limited Supply - Call
    IRF7910PBF
    DISTI # IRF7910PBF
    Infineon Technologies AGTrans MOSFET N-CH 12V 10A 8-Pin SOIC - Rail/Tube (Alt: IRF7910PBF)
    RoHS: Compliant
    Min Qty: 3800
    Container: Tube
    Americas - 3301
      IRF7910PBF
      DISTI # 1013366
      Infineon Technologies AGMOSFET, DUAL, NN, SO-8
      RoHS: Compliant
      0
      • 2500:$0.9180
      • 1000:$0.9970
      • 500:$1.2600
      • 100:$1.4300
      • 10:$1.8500
      • 1:$2.1700
      IRF7910PBF
      DISTI # 1013366
      Infineon Technologies AGMOSFET, DUAL, NN, SO-8
      RoHS: Compliant
      4
      • 5:£0.3730
      Immagine Parte # Descrizione
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      Disponibilità
      Azione:
      Available
      Su ordine:
      4000
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