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BSC109N10NS3 G

BSC109N10NS3 G
Mfr. #:
BSC109N10NS3 G
Produttore:
Infineon Technologies
Descrizione:
MOSFET N-Ch 100V 63A TDSON-8 OptiMOS 3
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
BSC109N10NS3 G Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
BSC109N10NS3 G maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
Tecnologie Infineon
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Serie
OptiMOS 3
Confezione
Bobina
Alias ​​parziali
BSC109N10NS3GATMA1 BSC109N10NS3GXT SP000778132
Stile di montaggio
SMD/SMT
Nome depositato
OptiMOS
Pacchetto-Custodia
TDSON-8
Tecnologia
si
Numero di canali
1 Channel
Tipo a transistor
1 N-Channel
Id-Continuo-Scarico-Corrente
63 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Rds-On-Drain-Source-Resistenza
10.9 mOhms
Polarità del transistor
Canale N
Tags
BSC109, BSC10, BSC1, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
Parte # Mfg. Descrizione Azione Prezzo
BSC109N10NS3GATMA1
DISTI # BSC109N10NS3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 100V 63A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		162In Stock
  • 1000:$0.6893
  • 500:$0.8731
  • 100:$1.1259
  • 10:$1.4250
  • 1:$1.6100
BSC109N10NS3GATMA1
DISTI # BSC109N10NS3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 100V 63A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		162In Stock
  • 1000:$0.6893
  • 500:$0.8731
  • 100:$1.1259
  • 10:$1.4250
  • 1:$1.6100
BSC109N10NS3GATMA1
DISTI # BSC109N10NS3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 63A 8TDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$0.5934
BSC109N10NS3GXT
DISTI # BSC109N10NS3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 100V 63A 8-Pin TDSON EP - Tape and Reel (Alt: BSC109N10NS3GATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 5000
  • 5000:$0.4669
  • 10000:$0.4499
  • 20000:$0.4339
  • 30000:$0.4189
  • 50000:$0.4119
BSC109N10NS3G
DISTI # BSC109N10NS3 G		Infineon Technologies AGTrans MOSFET N-CH 100V 63A 8-Pin TDSON T/R (Alt: BSC109N10NS3 G)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Asia - 0
    BSC109N10NS3GATMA1
    DISTI # 47Y7998    		Infineon Technologies AGMOSFET Transistor, N Channel, 63 A, 100 V, 0.0098 ohm, 10 V, 2.7 V RoHS Compliant: Yes0
    • 1:$1.3400
    • 10:$1.1400
    • 25:$1.0500
    • 50:$0.9620
    • 100:$0.8730
    • 250:$0.8220
    • 500:$0.7710
    • 1000:$0.6090
    BSC109N10NS3 G
    DISTI # 726-BSC109N10NS3G    		Infineon Technologies AGMOSFET N-Ch 100V 63A TDSON-8 OptiMOS 3
    RoHS: Compliant    		30
    • 1:$1.3400
    • 10:$1.1400
    • 100:$0.8730
    • 500:$0.7710
    • 1000:$0.6090
    BSC109N10NS3 GInfineon Technologies AG 2128
    • 1001:$0.7000
    • 201:$0.8000
    • 1:$2.0000
    BSC109N10NS3GATMA1
    DISTI # 2443423    		Infineon Technologies AGMOSFET, N CH, 100V, 63A, TDSON-8
    RoHS: Compliant    		0
    • 1:$2.1300
    • 10:$1.8100
    • 100:$1.3900
    • 500:$1.2200
    • 1000:$0.9640
    • 5000:$0.8730
    BSC109N10NS3GInfineon Technologies AG100V,10.9m,63A,N-Channel Power MOSFET31
    • 1:$0.9400
    • 100:$0.7800
    • 500:$0.6900
    • 1000:$0.6700
    BSC109N10NS3GATMA1
    DISTI # 2443423    		Infineon Technologies AGMOSFET, N CH, 100V, 63A, TDSON-8
    RoHS: Compliant    		0
    • 5:£0.9820
    • 25:£0.8870
    • 100:£0.6790
    • 250:£0.6400
    • 500:£0.6000
    Immagine Parte # Descrizione
    BSC109N10NS3 G

    Mfr.#: BSC109N10NS3 G

    OMO.#: OMO-BSC109N10NS3-G

    		 MOSFET N-Ch 100V 63A TDSON-8 OptiMOS 3
    BSC109N10NS3GXT

    Mfr.#: BSC109N10NS3GXT

    OMO.#: OMO-BSC109N10NS3GXT-1190

    		 Trans MOSFET N-CH 100V 63A 8-Pin TDSON EP - Tape and Reel (Alt: BSC109N10NS3GATMA1)
    BSC109N10NS3 G

    Mfr.#: BSC109N10NS3 G

    OMO.#: OMO-BSC109N10NS3-G-1190

    		 MOSFET N-Ch 100V 63A TDSON-8 OptiMOS 3
    BSC109N10NS3G

    Mfr.#: BSC109N10NS3G

    OMO.#: OMO-BSC109N10NS3G-1190

    		 Trans MOSFET N-CH 100V 63A 8-Pin TDSON T/R (Alt: BSC109N10NS3 G)
    BSC109N10NS3GATMA1

    Mfr.#: BSC109N10NS3GATMA1

    OMO.#: OMO-BSC109N10NS3GATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 100V 63A 8TDSON
    Disponibilità
    Azione:
    Available
    Su ordine:
    2000
    Inserisci la quantità:
    Il prezzo attuale di BSC109N10NS3 G è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    0,91 USD
    0,91 USD
    10
    0,87 USD
    8,68 USD
    100
    0,82 USD
    82,22 USD
    500
    0,78 USD
    388,25 USD
    1000
    0,73 USD
    730,80 USD
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