IRFH5220TR2PBF

IRFH5220TR2PBF
Mfr. #:
IRFH5220TR2PBF
Produttore:
Infineon Technologies
Descrizione:
MOSFET N-CH 200V 3.8A PQFN
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IRFH5220TR2PBF Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Tags
IRFH52, IRFH5, IRFH, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ernational Rectifier
200V Single N-Channel HEXFET Power MOSFET in a PQFN 5x6mm package
***ical
Trans MOSFET N-CH 200V 3.8A 8-Pin PQFN EP T/R
***ied Electronics & Automation
MOSFET N-Ch 200V 3.8A HEXFET PQFN8EP
***i-Key
MOSFET N-CH 200V 3.8A PQFN
***trelec
MOSFET [IR] IRFH5220TR2PBF MOSFET
***ark
N CH MOSFET, 200V, 3.8A, 8-PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:3.8A; Drain Source Voltage Vds:200V; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; No. of Pins:8 ;RoHS Compliant: Yes
***nell
MOSFET,W DIO,N CH,200V,3.8A,PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:5.8A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.08ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; Voltage Vgs Max:20V
***ment14 APAC
MOSFET,W DIO,N CH,200V,3.8A,PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:5.8A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.08ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:3.6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Voltage Vgs Max:20V
Parte # Mfg. Descrizione Azione Prezzo
IRFH5220TR2PBF
DISTI # IRFH5220TR2PBFCT-ND
Infineon Technologies AGMOSFET N-CH 200V 3.8A PQFN
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Limited Supply - Call
    IRFH5220TR2PBF
    DISTI # IRFH5220TR2PBFDKR-ND
    Infineon Technologies AGMOSFET N-CH 200V 3.8A PQFN
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Limited Supply - Call
      IRFH5220TR2PBF
      DISTI # 942-IRFH5220TR2PBF
      Infineon Technologies AGMOSFET MOSFT 200V 20A 100mOhm 20nC Qg
      RoHS: Compliant
      0
        IRFH5220TR2PBFInternational Rectifier 
        RoHS: Compliant
        800
          Immagine Parte # Descrizione
          IRFH5220TR2PBF

          Mfr.#: IRFH5220TR2PBF

          OMO.#: OMO-IRFH5220TR2PBF

          MOSFET MOSFT 200V 20A 100mOhm 20nC Qg
          IRFH5220TR2PBF

          Mfr.#: IRFH5220TR2PBF

          OMO.#: OMO-IRFH5220TR2PBF-INFINEON-TECHNOLOGIES

          MOSFET N-CH 200V 3.8A PQFN
          IRFH5220TRPBF

          Mfr.#: IRFH5220TRPBF

          OMO.#: OMO-IRFH5220TRPBF-INFINEON-TECHNOLOGIES

          RF Bipolar Transistors MOSFET 200V 1 N-CH HEXFET 99.9mOhms 20nC
          Disponibilità
          Azione:
          Available
          Su ordine:
          2500
          Inserisci la quantità:
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