IKP08N65H5XKSA1

IKP08N65H5XKSA1
Mfr. #:
IKP08N65H5XKSA1
Produttore:
Infineon Technologies
Descrizione:
IGBT Transistors IGBT PRODUCTS
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IKP08N65H5XKSA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IKP08N65H5XKSA1 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Pacchetto/custodia:
TO-220-3
Stile di montaggio:
Foro passante
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
650 V
Tensione di saturazione collettore-emettitore:
1.65 V
Tensione massima dell'emettitore di gate:
20 V
Corrente continua del collettore a 25 C:
18 A
Pd - Dissipazione di potenza:
70 W
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 175 C
Serie:
TRENCHSTOP 5 H5
Confezione:
Tubo
Marca:
Tecnologie Infineon
Corrente di dispersione gate-emettitore:
100 nA
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
500
sottocategoria:
IGBT
Nome depositato:
TRENCHSTOP
Parte # Alias:
IKP08N65H5 SP001001716
Unità di peso:
0.211644 oz
Tags
IKP08N65H, IKP08, IKP0, IKP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 18A 70000mW 3-Pin(3+Tab) TO-220 Tube
***ark
IGBT Single Transistor, 8 A, 1.65 V, 70 W, 650 V, TO-220, 3
***et Europe
Trans IGBT Chip N-CH 650V 18A 3-Pin TO-220 Tube
***Components
In a Tube of 50, Infineon IKP08N65H5XKSA1 IGBT
***i-Key
IGBT 650V 18A 70W PG-TO220-3
***ronik
IGBT 650V 8A 1,65V TO220-3
***ment14 APAC
IGBT, 650V, 8A, TO220-3
***ukat
650V 18A 70W TO220
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs
Infineon TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs are high speed and designed with ultimate efficiency for applications switching faster than 30kHz. The High Speed 5 IGBTs feature TRENCHSTOP™ 5 technology and are co-packed with a RAPID 1 fast and soft antiparallel diode. The H5 IGBTs offer best-in-class efficiency in hard switching and resonant topologies and are a plug-and-play replacement for previous generation IGBTs. Typical applications include UPS, welding converters, solar string inverters, and mid to high range switching frequency converters.
Parte # Mfg. Descrizione Azione Prezzo
IKP08N65H5XKSA1
DISTI # V99:2348_06383232
Infineon Technologies AGTrans IGBT Chip N-CH 650V 18A 70000mW 3-Pin(3+Tab) TO-220 Tube500
  • 1000:$0.9980
  • 500:$1.1816
  • 100:$1.3244
  • 10:$1.5901
  • 1:$1.8067
IKP08N65H5XKSA1
DISTI # IKP08N65H5XKSA1-ND
Infineon Technologies AGIGBT 650V 18A 70W PG-TO220-3
RoHS: Compliant
Min Qty: 1
Container: Tube
365In Stock
  • 1000:$1.1024
  • 500:$1.3305
  • 100:$1.6194
  • 10:$2.0150
  • 1:$2.2400
IKP08N65H5XKSA1
DISTI # 29497378
Infineon Technologies AGTrans IGBT Chip N-CH 650V 18A 70000mW 3-Pin(3+Tab) TO-220 Tube900
  • 10000:$0.9133
  • 5000:$0.9495
  • 2500:$0.9858
  • 1000:$1.0584
  • 500:$1.2802
  • 100:$1.4616
  • 12:$1.8346
IKP08N65H5XKSA1
DISTI # 29444308
Infineon Technologies AGTrans IGBT Chip N-CH 650V 18A 70000mW 3-Pin(3+Tab) TO-220 Tube500
  • 500:$1.1816
  • 100:$1.3244
  • 10:$1.5901
  • 7:$1.8067
IKP08N65H5XKSA1
DISTI # IKP08N65H5XKSA1
Infineon Technologies AGTrans IGBT Chip N-CH 650V 18A 3-Pin TO-220 Tube - Rail/Tube (Alt: IKP08N65H5XKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube
Americas - 0
  • 500:$1.0429
  • 1000:$1.0049
  • 2000:$0.9689
  • 3000:$0.9359
  • 5000:$0.9199
IKP08N65H5
DISTI # 726-IKP08N65H5-ES
Infineon Technologies AGIGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
RoHS: Compliant
450
  • 1:$2.1400
  • 10:$1.8200
  • 100:$1.4500
  • 500:$1.2700
  • 1000:$1.0500
  • 2500:$0.9780
  • 5000:$0.9420
IKP08N65H5XKSA1
DISTI # 726-IKP08N65H5XKSA1
Infineon Technologies AGIGBT Transistors IGBT PRODUCTS
RoHS: Compliant
642
  • 1:$2.1400
  • 10:$1.8200
  • 100:$1.4500
  • 500:$1.2700
  • 1000:$1.0500
  • 2500:$0.9780
  • 5000:$0.9420
IKP08N65H5XKSA1
DISTI # IKP08N65H5
Infineon Technologies AG650V 18A 70W TO220
RoHS: Compliant
914
  • 1:€4.9900
  • 10:€1.9900
  • 50:€0.9900
  • 100:€0.9000
IKP08N65H5XKSA1
DISTI # C1S322000393990
Infineon Technologies AGIGBT Chip
RoHS: Compliant
500
  • 500:$1.1816
  • 100:$1.3244
  • 10:$1.5901
IKP08N65H5XKSA1
DISTI # 2363286
Infineon Technologies AGIGBT, 650V, 8A, TO220-3
RoHS: Compliant
0
  • 5:£1.6400
  • 25:£1.1900
  • 100:£1.0800
  • 250:£0.9620
  • 500:£0.8480
Immagine Parte # Descrizione
IRGB4060DPBF

Mfr.#: IRGB4060DPBF

OMO.#: OMO-IRGB4060DPBF-INFINEON-TECHNOLOGIES

IGBT Transistors 600V UltraFast Trench IGBT
Disponibilità
Azione:
642
Su ordine:
2625
Inserisci la quantità:
Il prezzo attuale di IKP08N65H5XKSA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
2,13 USD
2,13 USD
10
1,81 USD
18,10 USD
100
1,44 USD
144,00 USD
500
1,26 USD
630,00 USD
1000
1,05 USD
1 050,00 USD
2500
0,98 USD
2 445,00 USD
5000
0,94 USD
4 710,00 USD
10000
0,91 USD
9 060,00 USD
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