AS4C16M16MSA-6BINTR

AS4C16M16MSA-6BINTR
Mfr. #:
AS4C16M16MSA-6BINTR
Produttore:
Alliance Memory
Descrizione:
DRAM 256M 166MHz 16Mx16 Mobile LP SDRAM IT
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
AS4C16M16MSA-6BINTR Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
AS4C16M16MSA-6BINTR maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Memoria dell'Alleanza
Categoria di prodotto:
DRAM
RoHS:
Y
Tipo:
SDRAM Mobile
Larghezza bus dati:
16 bit
Organizzazione:
16 M x 16
Pacchetto/custodia:
FBGA-54
Dimensione della memoria:
256 Mbit
Frequenza massima di clock:
166 MHz
Orario di accesso:
6 ns
Tensione di alimentazione - Max:
1.95 V
Tensione di alimentazione - Min:
1.7 V
Corrente di alimentazione - Max:
80 mA
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 85 C
Serie:
AS4C16M16MSA-6
Confezione:
Bobina
Marca:
Memoria dell'Alleanza
Stile di montaggio:
SMD/SMT
Sensibile all'umidità:
Tipologia di prodotto:
DRAM
Quantità confezione di fabbrica:
1000
sottocategoria:
Memoria e archiviazione dati
Tags
AS4C16M16M, AS4C16M1, AS4C16M, AS4C16, AS4C1, AS4C, AS4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Mobile Low Power SDRAMs
Alliance Memory Mobile Low Power SDRAMs are high-performance CMOS Dynamic RAMs (DRAM) with 64ms refresh period (4K cycle). These devices feature advanced circuit design to provide low active current and extremely low standby current. The low power features include Auto Temperature Compensated Self Refresh (TCSR), partial array self-refresh power-saving mode, deep power down mode, and driver strength control. The Mobile Low Power SDRAMs support 133MHZ/166MHZ high speeds and operate within -40°C to 85°C industrial temperature range. These quad bank devices are available in 128M, 256M, and 512M densities with 4Mx32, 8Mx16, 8Mx32, 16Mx32, and 32Mx16 organizations. The Mobile Low Power SDRAMs are compatible with the JEDEC standard LP-SDRAM specifications. Learn More
Parte # Mfg. Descrizione Azione Prezzo
AS4C16M16MSA-6BINTR
DISTI # AS4C16M16MSA-6BINTR-ND
Alliance Memory IncIC DRAM 256M PARALLEL 54FBGA
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2000:$4.1108
  • 1000:$4.2478
AS4C16M16MSA-6BINTR
DISTI # AS4C16M16MSA-6BINTR
Alliance Memory IncDRAM Chip Mobile LP SDRAM 256Mbit 16M X 16 1.8V 54-Pin FPBGA T/R (Alt: AS4C16M16MSA-6BINTR)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Europe - 0
  • 10000:€3.4900
  • 6000:€3.6900
  • 4000:€3.9900
  • 2000:€4.1900
  • 1000:€4.3900
AS4C16M16MSA-6BINTR
DISTI # AS4C16M16MSA-6BINTR
Alliance Memory IncDRAM Chip Mobile LP SDRAM 256Mbit 16M X 16 1.8V 54-Pin FPBGA T/R - Tape and Reel (Alt: AS4C16M16MSA-6BINTR)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 10000:$3.2900
  • 6000:$3.3900
  • 4000:$3.5900
  • 2000:$3.6900
  • 1000:$3.7900
AS4C16M16MSA-6BIN
DISTI # 913-AS4C16M16MSA6BIN
Alliance Memory IncDRAM 256M 166MHz 16Mx16 Mobile LP SDRAM IT
RoHS: Compliant
638
  • 1:$6.1400
  • 10:$5.6000
  • 25:$5.4900
  • 50:$5.4600
  • 100:$4.9000
  • 250:$4.8800
  • 500:$4.5700
  • 1000:$4.3800
AS4C16M16MSA-6BINTR
DISTI # 913-A4C16M16MSA6BINT
Alliance Memory IncDRAM 256M 166MHz 16Mx16 Mobile LP SDRAM IT
RoHS: Compliant
0
  • 1:$6.2400
  • 10:$5.7000
  • 25:$5.5900
  • 50:$5.5500
  • 100:$4.9800
  • 250:$4.9600
  • 500:$4.6500
  • 1000:$4.4500
Immagine Parte # Descrizione
AS4C16M16D1A-5TINTR

Mfr.#: AS4C16M16D1A-5TINTR

OMO.#: OMO-AS4C16M16D1A-5TINTR

DRAM
AS4C16M16SA-7BCN

Mfr.#: AS4C16M16SA-7BCN

OMO.#: OMO-AS4C16M16SA-7BCN

DRAM
AS4C16M16D1-5BCN

Mfr.#: AS4C16M16D1-5BCN

OMO.#: OMO-AS4C16M16D1-5BCN

DRAM 256M 2.5V 200Mhz 16M x 16 DDR1
AS4C16M16MD1-6BCN

Mfr.#: AS4C16M16MD1-6BCN

OMO.#: OMO-AS4C16M16MD1-6BCN

DRAM 256M, 1.8V, 166Mhz 16M x 16 Mobile DDR
AS4C16M16D2-25BCN

Mfr.#: AS4C16M16D2-25BCN

OMO.#: OMO-AS4C16M16D2-25BCN

DRAM
AS4C16M16S-7BCN

Mfr.#: AS4C16M16S-7BCN

OMO.#: OMO-AS4C16M16S-7BCN

DRAM 256Mb, 3.3V, 143Mhz 16M x 16 SDRAM
AS4C16M16D1A-5TCN

Mfr.#: AS4C16M16D1A-5TCN

OMO.#: OMO-AS4C16M16D1A-5TCN-ALLIANCE-MEMORY

IC DRAM 256M PARALLEL 66TSOP II
AS4C16M16SA-6BAN

Mfr.#: AS4C16M16SA-6BAN

OMO.#: OMO-AS4C16M16SA-6BAN-ALLIANCE-MEMORY

IC DRAM 256M PARALLEL 54TFBGA Automotive, AEC-Q100
AS4C16M16S-6TCNTR

Mfr.#: AS4C16M16S-6TCNTR

OMO.#: OMO-AS4C16M16S-6TCNTR-ALLIANCE-MEMORY

DRAM 256M, 3.3V, 166Mhz 16M x 16 SDRAM
AS4C16M16D1-5BIN

Mfr.#: AS4C16M16D1-5BIN

OMO.#: OMO-AS4C16M16D1-5BIN-ALLIANCE-MEMORY

DRAM 256M, 2.5V, 200Mhz 16M x 16 DDR1
Disponibilità
Azione:
Available
Su ordine:
4500
Inserisci la quantità:
Il prezzo attuale di AS4C16M16MSA-6BINTR è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
6,24 USD
6,24 USD
10
5,70 USD
57,00 USD
25
5,59 USD
139,75 USD
50
5,55 USD
277,50 USD
100
4,98 USD
498,00 USD
250
4,96 USD
1 240,00 USD
500
4,65 USD
2 325,00 USD
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