S29GL01GS11DHIV13

Mfr. #:: S29GL01GS11DHIV13
Produttore:: Cypress Semiconductor
Descrizione:: IC FLASH 1G PARALLEL 64BGA GL-S
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: S29GL01GS11DHIV13 Scheda dati
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Maggiori informazioni:: S29GL01GS11DHIV13 maggiori informazioni S29GL01GS11DHIV13 Product Details

Attributo del prodotto
Valore attributo

Produttore: CIPRESSO

categoria di prodotto: Memoria

Serie: GL-S

Confezione: Nastro e bobina (TR)

Pacchetto-Custodia: 56-TFSOP (0.724", 18.40mm Width)

Temperatura di esercizio: -40°C ~ 85°C (TA)

Interfaccia: Parallelo

Tensione di alimentazione: 1.65 V ~ 3.6 V

Pacchetto-dispositivo-fornitore: 64-Fortified BGA (9x9)

Dimensione della memoria: 1G (64M x 16)

Tipo di memoria: FLASH - NOR

Velocità: 110ns

Formato-Memoria: VELOCE

Tags: S29GL01GS11DHIV, S29GL01GS11DHI, S29GL01GS11D, S29GL01GS11, S29GL01GS, S29GL01G, S29GL01, S29GL0, S29GL, S29G, S29

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

S29GL01GS11DHIV13 Descrizione

***et: 1G BIT, 3V, 110NS, 64-BALL FBGA, PAGE MODE FLASH MEMORY FEA

***ical: NOR Flash Parallel 3V/3.3V 1G-bit 64M x 16 110ns 64-Pin Fortified BGA T/R

***ark: Tape And Reel / 1G Bit, 3V, 110Ns, 64-Ball Fbga, Page Mode Flash Memory Featuring 65 Nm Mirrorbit Process Technology, Vio, Highest Address Sector Protected

S29GL01GS11DHIV13 Maggiori informazioni

S29 GL-S MirrorBit® Eclipse™ Flash: Cypress S29 GL-S MirrorBit® Eclipse™ Flash products are fabricated on 65nm process technology. These devices offer a fast page access time - as fast as 15ns with a corresponding random access time as fast as 90ns. MirrorBit® Eclipse™ Flash non-volatile memory is a CMOS 3V core with versatile I/O interface. S29 GL-S MirrorBit® Eclipse™ Flash features a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation. This results in faster effective programming time than standard programming algorithms. Programming time makes the S29 GL-S flash ideal for today's embedded applications that require higher density, better performance, and lower power consumption.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
S29GL01GS11DHIV13 DISTI # V72:2272_06272376	Cypress Semiconductor	NOR Flash Parallel 3V/3.3V 1G-bit 64M x 16 110ns 64-Pin FBGA T/R RoHS: Compliant	1780	75000:$7.5310 30000:$7.6140 15000:$7.6960 6000:$7.7780 3000:$7.8610 1000:$8.7340 500:$9.7050 250:$10.2530 100:$10.9400 50:$11.5540 25:$12.9780 10:$13.5580 1:$14.7580
S29GL01GS11DHIV13 DISTI # S29GL01GS11DHIV13-ND	Cypress Semiconductor	IC FLASH 1G PARALLEL 64BGA RoHS: Compliant Min Qty: 2200 Container: Tape & Reel (TR)	Temporarily Out of Stock	2200:$7.7500
S29GL01GS11DHIV13 DISTI # 29064529	Cypress Semiconductor	NOR Flash Parallel 3V/3.3V 1G-bit 64M x 16 110ns 64-Pin FBGA T/R RoHS: Compliant	1780	1000:$8.7340 500:$9.7050 250:$10.2530 100:$10.9400 50:$11.5540 25:$12.9780 10:$13.5580 1:$14.7580
S29GL01GS11DHIV13 DISTI # 51Y1538	Cypress Semiconductor	TAPE AND REEL / 1G BIT, 3V, 110NS, 64-BALL FBGA, PAGE MODE FLASH MEMORY FEATURING 65 NM MIRRORBIT PROCESS TECHNOLOGY, VIO, HIGHEST ADDRESS SECTOR PROTECTED	0	1:$11.8000
S29GL01GS11DHIV13 DISTI # 727-29GL01GS11DHIV13	Cypress Semiconductor	NOR Flash Nor RoHS: Compliant	0	1:$12.9800 10:$11.8000 25:$10.9200 50:$10.0300 250:$9.1400 500:$8.5500 1000:$7.8500

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: S29GL01GT12DHN023 OMO.#: OMO-S29GL01GT12DHN023	NOR Flash Nor
	Mfr.#: S29GL01GT11TFIV40 OMO.#: OMO-S29GL01GT11TFIV40	NOR Flash IC 1 Gb FLASH MEMORY
	Mfr.#: S29GL01GS11TFB020 OMO.#: OMO-S29GL01GS11TFB020	NOR Flash Nor
	Mfr.#: S29GL01GS12DHVV13 OMO.#: OMO-S29GL01GS12DHVV13-CYPRESS-SEMICONDUCTOR	IC FLASH 1G PARALLEL 64FBGA GL-S
	Mfr.#: S29GL01GT10TFI013 OMO.#: OMO-S29GL01GT10TFI013-CYPRESS-SEMICONDUCTOR	NOR Flash Parallel 3V/3.3V 1G-bit 128M x 8/64M x 16 100ns 56-Pin TSOP T/R
	Mfr.#: S29GL01GT11DHIV10 OMO.#: OMO-S29GL01GT11DHIV10-CYPRESS-SEMICONDUCTOR	NOR Flash Parallel 3V/3.3V 1G-bit 128M x 8/64M x 16 110ns 64-Pin Fortified BGA Tray
	Mfr.#: S29GL01GS11WEI029 OMO.#: OMO-S29GL01GS11WEI029-CYPRESS-SEMICONDUCTOR	Flash Memory 1G BIT, 3V, 110NS, WAFER, PAGE MODE FLASH MEMORY FEATURING 65 NM MIRRORBIT PROCESS TECHNOLOGY, LOWEST ADDRESS SECTOR PROTECTED
	Mfr.#: S29GL01GS10FAI010 OMO.#: OMO-S29GL01GS10FAI010-CYPRESS-SEMICONDUCTOR	IC FLASH 1G PARALLEL 64BGA GL-S
	Mfr.#: S29GL01GP11TFIR10+ OMO.#: OMO-S29GL01GP11TFIR10--1151	IC FLASH 1G PARALLEL 56TSOP
	Mfr.#: S29GL01GS11TFI01 OMO.#: OMO-S29GL01GS11TFI01-1190	Nuovo e originale

Disponibilità

Azione:: Available
Su ordine:: 4000
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Il prezzo attuale di S29GL01GS11DHIV13 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~11,30 USD~~; ~~11,30 USD~~

10: ~~10,73 USD~~; ~~107,32 USD~~

100: ~~10,17 USD~~; ~~1 016,69 USD~~

500: ~~9,60 USD~~; ~~4 801,00 USD~~

1000: ~~9,04 USD~~; ~~9 037,20 USD~~

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S29GL01GS11DHIV13

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes