A2T09VD250NR1

A2T09VD250NR1
Mfr. #:
A2T09VD250NR1
Produttore:
NXP / Freescale
Descrizione:
RF MOSFET Transistors Airfast, RF Power LDMOS Transistor, 720-960 MHz, 80 W Avg., 48 V
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
A2T09VD250NR1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
NXP
Categoria di prodotto:
Transistor MOSFET RF
RoHS:
Y
Tecnologia:
si
Confezione:
Bobina
Marca:
NXP / Freescale
Sensibile all'umidità:
Tipologia di prodotto:
Transistor MOSFET RF
Quantità confezione di fabbrica:
500
sottocategoria:
MOSFET
Parte # Alias:
935320819528
Unità di peso:
0.056054 oz
Tags
A2T09V, A2T09, A2T0, A2T
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***escale Semiconductor
Airfast, RF Power LDMOS Transistor, 720-960 MHz, 80 W Avg., 48 V
***W
RF Power Transistor, 0.716 to 0.96 GHz, 65 W Avg., Typ. Gain in dB is 22.5 @ 920 MHz, 48 V, SOT1740-1, LDMOS
***et Europe
Transistor RF FET N-CH 105V 716MHz to 960MHz 6-Pin TO-270WB T/R
***S.I.T. Europe - USA - Asia
RF Power Field-Effect Transistor
Parte # Mfg. Descrizione Azione Prezzo
A2T09VD250NR1
DISTI # A2T09VD250NR1-ND
NXP SemiconductorsIC TRANS RF LDMOS
RoHS: Compliant
Min Qty: 500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 500:$94.4071
A2T09VD250NR1
DISTI # A2T09VD250NR1
Avnet, Inc.Trans MOSFET N-CH 105V 6-Pin TO-270WB T/R - Tape and Reel (Alt: A2T09VD250NR1)
RoHS: Compliant
Min Qty: 500
Container: Reel
Americas - 0
  • 500:$103.3900
  • 1000:$99.3900
  • 2000:$95.4900
  • 3000:$91.9900
  • 5000:$90.2900
A2T09VD250NR1
DISTI # 841-A2T09VD250NR1
NXP SemiconductorsRF MOSFET Transistors A2T09VD250N/FM6F///REEL 13 Q2/T3 *STANDARD MARK S
RoHS: Compliant
0
  • 500:$92.2900
A2T09VD250NR1NXP SemiconductorsRF Power Field-Effect Transistor
RoHS: Compliant
Europe - 2500
    A2T09VD250NR1
    DISTI # A2T09VD250NR1
    NXP SemiconductorsRF POWER TRANSISTOR
    RoHS: Compliant
    480
    • 1:$118.7000
    • 10:$109.7000
    • 25:$106.4800
    Immagine Parte # Descrizione
    A2T09VD250NR1

    Mfr.#: A2T09VD250NR1

    OMO.#: OMO-A2T09VD250NR1

    RF MOSFET Transistors Airfast, RF Power LDMOS Transistor, 720-960 MHz, 80 W Avg., 48 V
    A2T09VD300NR1

    Mfr.#: A2T09VD300NR1

    OMO.#: OMO-A2T09VD300NR1

    RF MOSFET Transistors Airfast, RF Power LDMOS Transistor, 720-960 MHz, 80 W Avg., 48 V
    A2T09VD300NR1

    Mfr.#: A2T09VD300NR1

    OMO.#: OMO-A2T09VD300NR1-NXP-SEMICONDUCTORS

    RF MOSFET Transistors Airfast, RF Power LDMOS Transistor, 720-960 MHz, 80 W Avg., 48 V
    A2T09VD250NR1

    Mfr.#: A2T09VD250NR1

    OMO.#: OMO-A2T09VD250NR1-NXP-SEMICONDUCTORS

    IC TRANS RF LDMOS
    A2T09VD250N

    Mfr.#: A2T09VD250N

    OMO.#: OMO-A2T09VD250N-1190

    Nuovo e originale
    A2T09VD300N

    Mfr.#: A2T09VD300N

    OMO.#: OMO-A2T09VD300N-1190

    Nuovo e originale
    Disponibilità
    Azione:
    Available
    Su ordine:
    4500
    Inserisci la quantità:
    Il prezzo attuale di A2T09VD250NR1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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