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IPB036N12N3 G

IPB036N12N3 G
Mfr. #:
IPB036N12N3 G
Produttore:
Infineon Technologies
Descrizione:
IGBT Transistors MOSFET N-Ch 120V 180A D2PAK-6 OptiMOS 3
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IPB036N12N3 G Scheda dati
Consegna:
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Pagamento:
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ECAD Model:
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IPB036N12N3 G maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
Tecnologie Infineon
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Serie
OptiMOS 3
Confezione
Bobina
Alias ​​parziali
IPB036N12N3GATMA1 IPB036N12N3GXT SP000675204
Unità di peso
0.056438 oz
Stile di montaggio
SMD/SMT
Nome depositato
OptiMOS
Pacchetto-Custodia
TO-263-7
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
300 W
Massima temperatura di esercizio
+ 175 C
Temperatura di esercizio minima
- 55 C
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
180 A
Vds-Drain-Source-Breakdown-Voltage
120 V
Vgs-th-Gate-Sorgente-Soglia-Tensione
3 V
Rds-On-Drain-Source-Resistenza
3.6 mOhms
Polarità del transistor
Canale N
Qg-Gate-Carica
158 nC
Transconduttanza diretta-Min
195 S 98 S
Tags
IPB036N12N3G, IPB036N12N3, IPB036, IPB03, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
Parte # Mfg. Descrizione Azione Prezzo
IPB036N12N3GATMA1
DISTI # V72:2272_06378504		Infineon Technologies AGTrans MOSFET N-CH 120V 180A Automotive 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant		980
  • 500:$3.7270
  • 250:$4.1280
  • 100:$4.3500
  • 25:$4.9429
  • 10:$4.9980
  • 1:$5.7480
IPB036N12N3GATMA1
DISTI # IPB036N12N3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 120V 180A TO263-7
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		764In Stock
  • 500:$4.3574
  • 100:$5.2007
  • 10:$6.3250
  • 1:$7.0300
IPB036N12N3GATMA1
DISTI # IPB036N12N3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 120V 180A TO263-7
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		764In Stock
  • 500:$4.3574
  • 100:$5.2007
  • 10:$6.3250
  • 1:$7.0300
IPB036N12N3GATMA1
DISTI # IPB036N12N3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 120V 180A TO263-7
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		On Order
  • 1000:$3.8211
IPB036N12N3 G
DISTI # 30580651		Infineon Technologies AGTrans MOSFET N-CH 120V 180A 7-Pin(6+Tab) TO-263
RoHS: Compliant		1852
  • 100:$4.5645
  • 50:$5.5717
  • 10:$5.6227
  • 4:$6.4132
IPB036N12N3GATMA1
DISTI # 31308714		Infineon Technologies AGTrans MOSFET N-CH 120V 180A Automotive 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant		980
  • 500:$3.7210
  • 250:$4.1200
  • 100:$4.3420
  • 25:$4.9330
  • 10:$4.9879
  • 2:$5.7370
IPB036N12N3 G
DISTI # 30578830		Infineon Technologies AGTrans MOSFET N-CH 120V 180A 7-Pin(6+Tab) TO-263
RoHS: Compliant		956
  • 4:$7.1250
IPB036N12N3 G
DISTI # IPB036N12N3 G		Infineon Technologies AGTrans MOSFET N-CH 120V 180A 7-Pin TO-263 T/R (Alt: IPB036N12N3 G)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Asia - 3000
  • 1000:$4.1353
  • 2000:$4.0019
  • 3000:$3.8769
  • 5000:$3.7594
  • 10000:$3.7033
  • 25000:$3.6488
  • 50000:$3.5959
IPB036N12N3GATMA1
DISTI # IPB036N12N3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 120V 180A 7-Pin(6+Tab) TO-263 - Tape and Reel (Alt: IPB036N12N3GATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$3.4900
  • 2000:$3.3900
  • 4000:$3.2900
  • 6000:$3.1900
  • 10000:$3.0900
IPB036N12N3GATMA1
DISTI # 47W3463		Infineon Technologies AGMOSFET, N CHANNEL, 120V, 180A, TO263-7,Transistor Polarity:N Channel,Continuous Drain Current Id:180A,Drain Source Voltage Vds:120V,On Resistance Rds(on):0.0029ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes1169
  • 1:$6.5700
  • 10:$5.5900
  • 25:$5.3400
  • 50:$5.0900
  • 100:$4.8400
  • 250:$4.6000
  • 500:$4.1200
IPB036N12N3GATMA1Infineon Technologies AGPower Field-Effect Transistor, 180A I(D), 120V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263
RoHS: Compliant		2185
  • 1000:$2.6800
  • 500:$2.8300
  • 100:$2.9400
  • 25:$3.0700
  • 1:$3.3000
IPB036N12N3 G
DISTI # 726-IPB036N12N3GXT		Infineon Technologies AGMOSFET N-Ch 120V 180A D2PAK-6 OptiMOS 3
RoHS: Compliant		1746
  • 1:$6.5700
  • 10:$5.5900
  • 100:$4.8400
  • 250:$4.6000
  • 500:$4.1200
  • 1000:$3.4800
IPB036N12N3GATMA1
DISTI # 726-IPB036N12N3GATMA		Infineon Technologies AGMOSFET N-Ch 120V 180A D2PAK-6 OptiMOS 3
RoHS: Compliant		311
  • 1:$6.5700
  • 10:$5.5900
  • 100:$4.8400
  • 250:$4.6000
  • 500:$4.1200
  • 1000:$3.4800
IPB036N12N3GATMA1
DISTI # 7545428		Infineon Technologies AGMOSFET N-CH 120V 180A OPTIMOS3 TO263, EA379
  • 1:£4.8500
  • 10:£3.8400
  • 50:£3.5100
  • 250:£3.1700
  • 500:£2.8300
IPB036N12N3GATMA1
DISTI # 7545428P		Infineon Technologies AGMOSFET N-CH 120V 180A OPTIMOS3 TO263, RL1451
  • 10:£3.8400
  • 50:£3.5100
  • 250:£3.1700
  • 500:£2.8300
IPB036N12N3GInfineon Technologies AG 569
    IPB036N12N3 GInfineon Technologies AG 376
      IPB036N12N3 GInfineon Technologies AGINSTOCK105
        IPB036N12N3-GInfineon Technologies AGINSTOCK105
          IPB036N12N3GATMA1
          DISTI # 2212819          		Infineon Technologies AGMOSFET, N-CH, 120V, 180A, TO263-7
          RoHS: Compliant          		1652
          • 1:£4.6100
          • 10:£3.9200
          • 100:£3.3900
          • 250:£3.2100
          • 500:£2.8900
          IPB036N12N3 G
          DISTI # C1S322000133246          		Infineon Technologies AGTrans MOSFET N-CH 120V 180A Automotive 7-Pin(6+Tab) D2PAK T/R
          RoHS: Compliant          		956
          • 100:$4.1500
          • 50:$5.0700
          • 10:$5.1200
          • 1:$5.7000
          IPB036N12N3 G
          DISTI # C1S322000438099          		Infineon Technologies AGTrans MOSFET N-CH 120V 180A Automotive 7-Pin(6+Tab) D2PAK T/R
          RoHS: Compliant          		1852
          • 100:$3.5800
          • 50:$4.3700
          • 10:$4.4100
          • 1:$5.0300
          IPB036N12N3GATMA1
          DISTI # C1S322000643035          		Infineon Technologies AGMOSFETs
          RoHS: Compliant          		980
          • 250:$4.1200
          • 100:$4.3420
          • 25:$4.9330
          • 10:$4.9879
          • 1:$5.7370
          IPB036N12N3GATMA1
          DISTI # 2212819          		Infineon Technologies AGMOSFET, N-CH, 120V, 180A, TO263-7
          RoHS: Compliant          		1169
          • 1:$10.4000
          • 10:$8.8500
          • 100:$7.6600
          • 250:$7.2800
          • 500:$6.5300
          • 1000:$5.5100
          IPB036N12N3 GInfineon Technologies AGRoHS(ship within 1day)300
          • 1:$6.7700
          • 10:$5.7700
          • 50:$5.0000
          • 100:$4.7700
          • 500:$4.5800
          • 1000:$4.4800
          Immagine Parte # Descrizione
          IPB036N12N3 G

          Mfr.#: IPB036N12N3 G

          OMO.#: OMO-IPB036N12N3-G

          		 MOSFET N-Ch 120V 180A D2PAK-6 OptiMOS 3
          IPB036N12N3GATMA1

          Mfr.#: IPB036N12N3GATMA1

          OMO.#: OMO-IPB036N12N3GATMA1

          		 MOSFET N-Ch 120V 180A D2PAK-6 OptiMOS 3
          IPB036N12N3GATMA1

          Mfr.#: IPB036N12N3GATMA1

          OMO.#: OMO-IPB036N12N3GATMA1-INFINEON-TECHNOLOGIES

          		 MOSFET N-CH 120V 180A TO263-7
          IPB036N12N3-G

          Mfr.#: IPB036N12N3-G

          OMO.#: OMO-IPB036N12N3-G-1190

          		 INSTOCK
          IPB036N12N

          Mfr.#: IPB036N12N

          OMO.#: OMO-IPB036N12N-1190

          		 Nuovo e originale
          IPB036N12N3

          Mfr.#: IPB036N12N3

          OMO.#: OMO-IPB036N12N3-1190

          		 Nuovo e originale
          IPB036N12N3G

          Mfr.#: IPB036N12N3G

          OMO.#: OMO-IPB036N12N3G-1190

          		 180 A, 120 V, 0.0036 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-263
          IPB036N12N3GTR

          Mfr.#: IPB036N12N3GTR

          OMO.#: OMO-IPB036N12N3GTR-1190

          		 Nuovo e originale
          IPB036N12N3 G

          Mfr.#: IPB036N12N3 G

          OMO.#: OMO-IPB036N12N3-G-126

          		 IGBT Transistors MOSFET N-Ch 120V 180A D2PAK-6 OptiMOS 3
          Disponibilità
          Azione:
          Available
          Su ordine:
          3500
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          Il prezzo attuale di IPB036N12N3 G è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
          Prezzo di riferimento (USD)
          Quantità
          Prezzo unitario
          est. Prezzo
          1
          5,22 USD
          5,22 USD
          10
          4,96 USD
          49,59 USD
          100
          4,70 USD
          469,80 USD
          500
          4,44 USD
          2 218,50 USD
          1000
          4,18 USD
          4 176,00 USD
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