DMN2041LSD-13

Mfr. #:: DMN2041LSD-13
Produttore:: Diodes Incorporated
Descrizione:: Darlington Transistors MOSFET MOSFET DUAL N-CHAN ENHANCE MODE
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: DMN2041LSD-13 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: DMN2041LSD-13 Datasheet DMN2041LSD-13 Datasheet (P4-P6)
ECAD Model:

Attributo del prodotto
Valore attributo

Produttore: Diodi incorporati

categoria di prodotto: FET - Array

Serie: DMN2041

Confezione: Imballaggio alternativo Digi-ReelR

Unità di peso: 0.002610 oz

Stile di montaggio: SMD/SMT

Pacchetto-Custodia: 8-SOIC (0.154", 3.90mm Width)

Tecnologia: si

Temperatura di esercizio: -55°C ~ 150°C (TJ)

Tipo di montaggio: Montaggio superficiale

Numero di canali: 2 Channel

Pacchetto-dispositivo-fornitore: 8-SO

Configurazione: Dual

Tipo FET: 2 N-Channel (Dual)

Potenza-Max: 1.16W

Tipo a transistor: 2 N-Channel

Drain-to-Source-Voltage-Vdss: 20V

Ingresso-Capacità-Ciss-Vds: 550pF @ 10V

Funzione FET: Porta livello logico

Corrente-Continuo-Scarico-Id-25°C: 7.63A

Rds-On-Max-Id-Vgs: 28 mOhm @ 6A, 4.5V

Vgs-th-Max-Id: 1.2V @ 250μA

Gate-Carica-Qg-Vgs: 15.6nC @ 10V

Pd-Power-Dissipazione: 1.16 W

Massima temperatura di esercizio: + 150 C

Temperatura di esercizio minima: - 55 C

Id-Continuo-Scarico-Corrente: 7.63 A

Vds-Drain-Source-Breakdown-Voltage: 20 V

Rds-On-Drain-Source-Resistenza: 41 mOhms

Polarità del transistor: Canale N

Qg-Gate-Carica: 15.6 nC

Modalità canale: Aumento

Tags: DMN2041LSD-1, DMN2041LS, DMN2041L, DMN2041, DMN204, DMN20, DMN2, DMN

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

DMN2041LSD-13 Descrizione

***et Japan: Transistor MOSFET Array Dual N-CH 20V 7.63A 8-Pin SOIC T/R

***ure Electronics: Dual N-Channel 20 V 28/41 mO 15.6 nC SMT Enhancement Mode Mosfet - SOIC-8

***ical: Trans MOSFET N-CH 20V 7.63A Automotive 8-Pin SO T/R

***(Formerly Allied Electronics): Dual N-Channel Enhancement MOSFET SOIC8

***des Inc SCT: N-Channel Mosfet, 20V VDS, 12±V VGS

***(Formerly Allied Electronics): IRF7401PBF N-channel MOSFET Transistor; 8.7 A; 20 V; 8-Pin SOIC

***ure Electronics: Single N-Channel 20 V 0.022 Ohm 48 nC HEXFET® Power Mosfet - SOIC-8

*** Source Electronics: Trans MOSFET N-CH Si 20V 8.7A 8-Pin SOIC T/R / MOSFET N-CH 20V 8.7A 8-SOIC

***nell: N CHANNEL MOSFET, 20V, 8.7A, SOIC; Trans; Transistor Polarity: N Channel; Continuous Drain Current Id: 8.7A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.022ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vg

***roFlash: Power Field-Effect Transistor, 8.7A I(D), 20V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 8.7 / Drain-Source Voltage (Vds) V = 20 / ON Resistance (Rds(on)) mOhm = 22 / Gate-Source Voltage V = 12 / Fall Time ns = 92 / Rise Time ns = 72 / Turn-OFF Delay Time ns = 65 / Turn-ON Delay Time ns = 13 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.5

***ure Electronics: Dual N-Channel 20 V 30 mOhm 13 nC HEXFET® Power Mosfet - SOIC-8

*** Source Electronics: MOSFET 2N-CH 20V 7A 8-SOIC / Trans MOSFET N-CH Si 20V 7A 8-Pin SOIC T/R

***ineon: Benefits: RoHS Compliant; Low RDS(on); Dual N-Channel MOSFET

***ark: Mosfet, Dual N-Ch, 20V, 7A, Soic; Transistor Polarity:dual N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:20V; On Resistance Rds(On):0.03Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.2V; Power Rohs Compliant: Yes

***ure Electronics: Dual N/P-Channel 20 V 28/45 mOhm 11.6/15.4 nC 2.14 W Silicon Mosfet - SOIC-8

***(Formerly Allied Electronics): 20V Compl. Pair Enhancement MOSFET SOIC8

***et: Trans MOSFET N/P-CH 20V 8.5A/6.8A 8-Pin SO T/R

***ark: Mosfet, Dual, N/p-Ch, 20V, 7.8A Rohs Compliant: Yes

***des Inc SCT: COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET, 1.8 W

***ure Electronics: Dual N-Channel 20 V 35 mOhm 10.4 nC 1.2 W Silicon Surface Mount Mosfet - SOIC-8

***et Europe: Transistor MOSFET Array Dual N-CH 20V 6.9A 8-Pin SOIC T/R

***(Formerly Allied Electronics): MOSFET Dual N-Ch 20V 5.8V Enhanc. SOIC8

***ark: Mosfet, Dual, N-Ch, 20V, 5.8A Rohs Compliant: Yes

***ical: Trans MOSFET N-CH 20V 5.8A 8-Pin SO T/R

***ment14 APAC: MOSFET, DUAL, N-CH, 20V, 5.8A;

***et: Transistor MOSFET Array Dual P-CH 20V 4.6A 8-Pin SOIC T/R

***ical: Trans MOSFET P-CH 20V 4.6A Automotive 8-Pin SO T/R

***des Inc SCT: Dual P-CHANNEL ENHANCEMENT MODE MOSFET, 20V VDS, 12±V VGS

***ure Electronics: DMG Series 20 V 75 mOhm SMT Dual P-Channel Enhancement Mode Mosfet - SO-8

***ark: Mosfet, Dual, P-Ch, 20V, 4.6A Rohs Compliant: Yes

***ronik: DUAL P-CH 20V 4,6A 75mOhm SO-8

***ineon: Benefits: RoHS Compliant; Fast Switching; Low Profile (less than 1.1mm); Dual N-Channel MOSFET

***ure Electronics: Dual N-Channel 20 V 0.135 Ohm 5.3 nC HEXFET® Power Mosfet - MICRO-8

***et Europe: Transistor MOSFET Array Dual N-CH 20V 2.4A 8-Pin Micro8 T/R

***ineon SCT: 20V Dual N-Channel HEXFET Power MOSFET in a Micro 8 package, MICRO8, RoHS

***ment14 APAC: DUAL N CHANNEL MOSFET, 20V, MICRO8; Tran; DUAL N CHANNEL MOSFET, 20V, MICRO8; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:2.4A; Drain Source Voltage Vds, N Channel:20V; On Resistance Rds(on), N Channel:0.085ohm; Rds(on) Test Voltage Vgs:4.5V

***nell: MOSFET, DUAL NN MICRO-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 2.4A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.135ohm; Rds(on) Test Voltage Vgs: 2.7V; Threshold Voltage Vgs: -; Power Dissipation Pd: 1.25W; Transistor Case Style: µSOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Continuous Drain Current Id, N Channel: 2.4A; Current Temperature: 25°C; Drain Source Voltage Vds, N Channel: 20V; External Depth: 5.03mm; External Length / Height: 1.11mm; External Width: 3.05mm; Full Power Rating Temperature: 25°C; Junction Temperature Tj Max: 150°C; Junction Temperature Tj Min: -55°C; Lead Spacing: 0.65mm; No. of Transistors: 2; On Resistance Rds(on), N Channel: 0.12ohm; On State Resistance Max: 135mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 19A; Row Pitch: 4.24mm; SMD Marking: F7501; Voltage Vds: 20V

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
DMN2041LSD-13 DISTI # V72:2272_06698060	Zetex / Diodes Inc	Trans MOSFET N-CH 20V 7.63A Automotive 8-Pin SO T/R RoHS: Compliant	120	100:$0.2300 25:$0.3699 10:$0.3738 1:$0.4491
DMN2041LSD-13 DISTI # DMN2041LSD-13DICT-ND	Diodes Incorporated	MOSFET 2N-CH 20V 7.63A 8SO RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	52335In Stock	1000:$0.2119 500:$0.2742 100:$0.3739 10:$0.4990 1:$0.5900
DMN2041LSD-13 DISTI # DMN2041LSD-13DIDKR-ND	Diodes Incorporated	MOSFET 2N-CH 20V 7.63A 8SO RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	52335In Stock	1000:$0.2119 500:$0.2742 100:$0.3739 10:$0.4990 1:$0.5900
DMN2041LSD-13 DISTI # DMN2041LSD-13DITR-ND	Diodes Incorporated	MOSFET 2N-CH 20V 7.63A 8SO RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	50000In Stock	2500:$0.1875
DMN2041LSD-13 DISTI # 25756562	Zetex / Diodes Inc	Trans MOSFET N-CH 20V 7.63A Automotive 8-Pin SO T/R RoHS: Compliant	120	100:$0.2300 46:$0.3699
DMN2041LSD-13 DISTI # 70550766	Diodes Incorporated	Dual N-Channel Enhancement MOSFET SOIC8 RoHS: Compliant	0	125:$0.2500 375:$0.2300 1500:$0.1900 2500:$0.1600
DMN2041LSD-13 DISTI # 621-DMN2041LSD-13	Diodes Incorporated	MOSFET MOSFET DUAL N-CHAN ENHANCE MODE RoHS: Compliant	2330	1:$0.4800 10:$0.3980 100:$0.2430 1000:$0.1880 2500:$0.1600
DMN2041LSD-13	Diodes Incorporated	Dual N-Channel 20 V 28/41 mO 15.6 nC SMT Enhancement Mode Mosfet - SOIC-8 RoHS: Compliant	2500Reel	2500:$0.1790 5000:$0.1520
DMN2041LSD-13	Diodes Incorporated		2480
DMN2041LSD-13 DISTI # C1S205700141594	Diodes Incorporated	Trans MOSFET N-CH 20V 7.63A Automotive 8-Pin SO T/R RoHS: Compliant	120	100:$0.2300 25:$0.3699 10:$0.3738

Prodotti correlati

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	Mfr.#: DMN2041L-7 , MAX6419UK16 OMO.#: OMO-DMN2041L-7-MAX6419UK16-1190	Nuovo e originale
	Mfr.#: DMN2041L-7 OMO.#: OMO-DMN2041L-7-DIODES	Nuovo e originale
	Mfr.#: DMN2041UFDB-7 OMO.#: OMO-DMN2041UFDB-7-DIODES	MOSFET 2N-CH 20V 4.7A 6UDFN
	Mfr.#: DMN2046U-7 OMO.#: OMO-DMN2046U-7-DIODES	Trans MOSFET N-CH 20V 3.4A 3-Pin SOT-23 T/R
	Mfr.#: DMN2041LSD-13 OMO.#: OMO-DMN2041LSD-13-DIODES	Darlington Transistors MOSFET MOSFET DUAL N-CHAN ENHANCE MODE
	Mfr.#: DMN2040LSD-13 OMO.#: OMO-DMN2040LSD-13-DIODES	MOSFET DUAL N-CHANNEL ENHANCEMENT MODE

Disponibilità

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Su ordine:: 3500
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Il prezzo attuale di DMN2041LSD-13 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,17 USD~~; ~~0,17 USD~~

10: ~~0,16 USD~~; ~~1,62 USD~~

100: ~~0,15 USD~~; ~~15,38 USD~~

500: ~~0,15 USD~~; ~~72,60 USD~~

1000: ~~0,14 USD~~; ~~136,70 USD~~

A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.

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DMN2041LSD-13

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes