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IHW40N135R3FKSA1

IHW40N135R3FKSA1
Mfr. #:
IHW40N135R3FKSA1
Produttore:
Infineon Technologies
Descrizione:
IGBT Transistors IGBT PRODUCTS
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IHW40N135R3FKSA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IHW40N135R3FKSA1 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Pacchetto/custodia:
TO-247-3
Stile di montaggio:
Foro passante
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
1350 V
Tensione di saturazione collettore-emettitore:
1.65 V
Tensione massima dell'emettitore di gate:
20 V
Corrente continua del collettore a 25 C:
80 A
Pd - Dissipazione di potenza:
429 W
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 175 C
Serie:
RC
Confezione:
Tubo
Marca:
Tecnologie Infineon
Corrente di dispersione gate-emettitore:
100 nA
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
240
sottocategoria:
IGBT
Nome depositato:
TRENCHSTOP
Parte # Alias:
IHW40N135R3 IHW4N135R3XK SP000989498
Unità di peso:
1.340411 oz
Tags
IHW40N135R, IHW40N13, IHW40N1, IHW40N, IHW4, IHW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 1350V 80A 429000mW 3-Pin(3+Tab) TO-247 Tube
***ark
Transistor, Igbt, 1.35Kv, 80A, To-247; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:429W; Collector Emitter Voltage V(Br)Ceo:1.35Kv; Transistor Case Style:to-247; No. Of Rohs Compliant: Yes
***ineon
The 3 rd generation of reverse conducting IGBTs has been optimized for lower switching and conduction losses. Reduced power dissipation together with soft switching behavior allows better thermal performance and EMI behavior resulting in lower system costs. Excellent performance can be achieved at lower costs. | Summary of Features: Best-in-class conduction properties in V CE(sat) and V f; Lowest switching losses, highest efficiency; T j(max) = 175C; Soft current turn-off waveforms for low EMI | Benefits: Lowest power dissipation; Better thermal management; Surge current capability; Lower EMI filtering requirements; Reduced system costs; Excellent quality; Highest reliability against peak currents | Target Applications: Induction cooking stoves; Microwave ovens; Rice cookers; Solar; Other soft switching applications
Infineon 3rd Generation Reverse Conducting IGBTs
Infineon's 3rd Generation Reverse Conducting IGBTs have been optimized for lower switching and conduction losses. Reduced power dissipation together with soft switching behavior allows better thermal performance and EMI behavior resulting in lower system costs. Excellent performance can be achieved at lower costs. Infineon RC-H technology has set the benchmark of Tj(max) of 175°C to offer higher lifetime reliability. Recent portfolio extension to 30A and 40A at 1200V and 1350V defines the new trend for higher power density and better reliability devices. 40A 1350V device is capable for switching up to 50kHz with VCE(sat) value of 1.65V at 25°C – a staggering 5% lower loss than the next best competitor.Learn More
Parte # Mfg. Descrizione Azione Prezzo
IHW40N135R3FKSA1
DISTI # V99:2348_06378455		Infineon Technologies AGTrans IGBT Chip N-CH 1.35KV 80A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		190
  • 500:$3.6110
  • 250:$3.8990
  • 100:$4.2340
  • 10:$4.8750
  • 1:$6.3030
IHW40N135R3FKSA1
DISTI # V36:1790_06378455		Infineon Technologies AGTrans IGBT Chip N-CH 1.35KV 80A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		0
    IHW40N135R3FKSA1
    DISTI # IHW40N135R3FKSA1-ND    		Infineon Technologies AGIGBT 1350V 80A 429W TO247-3
    RoHS: Compliant
    Min Qty: 240
    Container: Tube    		Limited Supply - Call
    • 240:$4.4658
    IHW40N135R3FKSA1
    DISTI # 31688318    		Infineon Technologies AGTrans IGBT Chip N-CH 1.35KV 80A 3-Pin(3+Tab) TO-247 Tube
    RoHS: Compliant    		12480
    • 500:$3.5838
    • 250:$3.9897
    • 240:$4.2075
    IHW40N135R3FKSA1
    DISTI # 31949308    		Infineon Technologies AGTrans IGBT Chip N-CH 1.35KV 80A 3-Pin(3+Tab) TO-247 Tube
    RoHS: Compliant    		190
    • 500:$3.6110
    • 250:$3.8990
    • 100:$4.2340
    • 10:$4.8750
    • 3:$5.7300
    IHW40N135R3FKSA1
    DISTI # SP000989498    		Infineon Technologies AGTrans IGBT Chip N-CH 1.35KV 80A 3-Pin TO-247 Tube (Alt: SP000989498)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		Europe - 24040
    • 100:€2.3900
    • 500:€2.3900
    • 1000:€2.3900
    • 50:€2.4900
    • 10:€2.5900
    • 25:€2.5900
    • 1:€2.6900
    IHW40N135R3FKSA1
    DISTI # IHW40N135R3FKSA1    		Infineon Technologies AGTrans IGBT Chip N-CH 1.35KV 80A 3-Pin TO-247 Tube - Rail/Tube (Alt: IHW40N135R3FKSA1)
    RoHS: Compliant
    Min Qty: 240
    Container: Tube    		Americas - 0
    • 2400:$2.6900
    • 1440:$2.7900
    • 960:$2.8900
    • 480:$2.9900
    • 240:$3.0900
    IHW40N135R3FKSA1
    DISTI # IHW40N135R3    		Infineon Technologies AGTrans IGBT Chip N-CH 1.35KV 80A 3-Pin TO-247 Tube (Alt: IHW40N135R3)
    RoHS: Compliant
    Min Qty: 240
    Container: Tube    		Asia - 0
    • 12000:$2.7609
    • 6000:$2.7963
    • 2400:$2.8326
    • 1200:$2.8699
    • 720:$2.9474
    • 480:$3.0293
    • 240:$3.1159
    IHW40N135R3FKSA1
    DISTI # 13AC9005    		Infineon Technologies AGTRANSISTOR, IGBT, 1.35KV, 80A, TO-247,DC Collector Current:80A,Collector Emitter Saturation Voltage Vce(on):1.65V,Power Dissipation Pd:429W,Collector Emitter Voltage V(br)ceo:1.35kV,Transistor Case Style:TO-247,No. of RoHS Compliant: Yes0
    • 100:$4.7200
    • 50:$4.9300
    • 25:$5.1400
    • 10:$5.3600
    • 1:$6.2300
    IHW40N135R3FKSA1
    DISTI # 726-IHW40N135R3FKSA1    		Infineon Technologies AGIGBT Transistors IGBT PRODUCTS
    RoHS: Compliant    		468
    • 1:$5.7700
    • 10:$4.9000
    • 100:$4.2500
    • 250:$4.0300
    • 500:$3.6200
    IHW40N135R3
    DISTI # 726-IHW40N135R3    		Infineon Technologies AGIGBT Transistors IGBT PRODUCTS TrenchStop RC
    RoHS: Compliant    		0
      IHW40N135R3FKSA1Infineon Technologies AG 
      RoHS: Not Compliant      		240
      • 1000:$2.4900
      • 500:$2.6200
      • 100:$2.7300
      • 25:$2.8400
      • 1:$3.0600
      IHW40N135R3FKSA1
      DISTI # 2725784      		Infineon Technologies AGTRANSISTOR, IGBT, 1.35KV, 80A, TO-247
      RoHS: Compliant      		595
      • 1200:$4.8700
      • 720:$5.7700
      • 240:$6.7800
      • 10:$8.2700
      • 1:$9.2000
      IHW40N135R3FKSA1
      DISTI # 2725784      		Infineon Technologies AGTRANSISTOR, IGBT, 1.35KV, 80A, TO-247
      RoHS: Compliant      		615
      • 500:£2.6500
      • 250:£2.9500
      • 100:£3.1100
      • 10:£3.5900
      • 1:£4.9200
      IHW40N135R3FKSA1
      DISTI # XSKDRABV0042837      		Infineon Technologies AG 
      RoHS: Compliant      		19240 in Stock0 on Order
      • 19240:$4.3560
      • 240:$4.6680
      Immagine Parte # Descrizione
      L6388ED

      Mfr.#: L6388ED

      OMO.#: OMO-L6388ED

      		 Gate Drivers Hi-Vltg and Lo Side Driver
      TC58NVG1S3HTA00

      Mfr.#: TC58NVG1S3HTA00

      OMO.#: OMO-TC58NVG1S3HTA00

      		 NAND Flash 3.3V 2Gb 24nm SLC NAND (EEPROM)
      IHW40N135R5XKSA1

      Mfr.#: IHW40N135R5XKSA1

      OMO.#: OMO-IHW40N135R5XKSA1

      		 IGBT Transistors TRENCHSTOP RC-H5 1200V IGBT
      FSQ0365RN

      Mfr.#: FSQ0365RN

      OMO.#: OMO-FSQ0365RN

      		 AC/DC Converters 3A/650V QRC Power Switch
      1N5819HW-7-F

      Mfr.#: 1N5819HW-7-F

      OMO.#: OMO-1N5819HW-7-F

      		 Schottky Diodes & Rectifiers Vr/40V Io/1A T/R
      MSP432P401RIPZR

      Mfr.#: MSP432P401RIPZR

      OMO.#: OMO-MSP432P401RIPZR

      		 ARM Microcontrollers - MCU Ultra low power ARM Micro Controller
      BD50C0AFP-CE2

      Mfr.#: BD50C0AFP-CE2

      OMO.#: OMO-BD50C0AFP-CE2

      		 LDO Voltage Regulators 4-26.5V TO252-3 15A LDO Regulator
      BD50C0AFP-CE2

      Mfr.#: BD50C0AFP-CE2

      OMO.#: OMO-BD50C0AFP-CE2-ROHM-SEMICONDUCTOR

      		 IC REG LINEAR 5V 1A TO252-3
      L6388ED

      Mfr.#: L6388ED

      OMO.#: OMO-L6388ED-STMICROELECTRONICS

      		 Gate Drivers Hi-Vltg and Lo Side Drive
      TC58NVG1S3HTA00

      Mfr.#: TC58NVG1S3HTA00

      OMO.#: OMO-TC58NVG1S3HTA00-TOSHIBA-MEMORY-AMERICA

      		 EEPROM 3.3V, 2 Gbit CMOS NAND EEPROM
      Disponibilità
      Azione:
      264
      Su ordine:
      2247
      Inserisci la quantità:
      Il prezzo attuale di IHW40N135R3FKSA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
      Prezzo di riferimento (USD)
      Quantità
      Prezzo unitario
      est. Prezzo
      1
      5,77 USD
      5,77 USD
      10
      4,90 USD
      49,00 USD
      100
      4,25 USD
      425,00 USD
      250
      4,03 USD
      1 007,50 USD
      500
      3,62 USD
      1 810,00 USD
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