OMO ElectronicOMO Electronic
Expand menu
Ciao, accediIl mio account
0 Carrello

SIHD1K4N60E-GE3

SIHD1K4N60E-GE3
Mfr. #:
SIHD1K4N60E-GE3
Produttore:
Vishay / Siliconix
Descrizione:
MOSFET 600V Vds 30V Vgs DPAK (TO-252)
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SIHD1K4N60E-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
SIHD1K4N60E-GE3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Vishay
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
TO-252-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
600 V
Id - Corrente di scarico continua:
4.2 A
Rds On - Resistenza Drain-Source:
1.45 Ohms
Vgs th - Tensione di soglia gate-source:
3 V
Vgs - Tensione Gate-Source:
30 V
Qg - Carica cancello:
7.5 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
63 W
Configurazione:
Separare
Modalità canale:
Aumento
Serie:
E
Tipo di transistor:
1 N-Channel E-Series Power MOSFET
Marca:
Vishay / Siliconix
Transconduttanza diretta - Min:
0.8 S
Tempo di caduta:
22 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
23 ns
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
10 ns
Tempo di ritardo di accensione tipico:
10 ns
Tags
SIHD1, SIHD, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
4th Gen E Series MOSFETs
Vishay Semiconductors 4th Gen E Series MOSFETs are low Figure-Of-Merit (FOM) MOSFETs with E series technology. The 4th Gen E series MOSFETs feature low effective capacitance and reduced switching and conduction losses. These MOSFETs are avalanche energy rated (UIS). The 4th Gen MOSFETs are available in TO-220AB, PowerPAK® SO-8L, PowerPAK® 8 x 8, DPAK (TO-252), and Thin-Lead TO-220 FULLPAK packages. Typical applications include server and telecom power supplies, lighting, industrial, Switch Mode Power Supplies (SMPS), and Power Factor Correction (PFC) power supplies.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Parte # Mfg. Descrizione Azione Prezzo
SIHD1K4N60E-GE3
DISTI # V99:2348_22712079		Vishay IntertechnologiesE Series Power MOSFET DPAK (TO-252), 1450 m @ 10V3000
  • 2500:$0.4537
  • 1000:$0.4579
  • 500:$0.5853
  • 100:$0.6969
  • 10:$1.0531
  • 1:$1.2277
SIHD1K4N60E-GE3
DISTI # SIHD1K4N60E-GE3-ND		Vishay SiliconixMOSFET N-CH DPAK TO-252
RoHS: Compliant
Min Qty: 1
Container: Bulk		3015In Stock
  • 5000:$0.4678
  • 2500:$0.4924
  • 1000:$0.5276
  • 500:$0.6683
  • 100:$0.8090
  • 10:$1.0380
  • 1:$1.1600
SIHD1K4N60E-GE3
DISTI # 33076649		Vishay IntertechnologiesE Series Power MOSFET DPAK (TO-252), 1450 m @ 10V3000
  • 2500:$0.4537
  • 1000:$0.4579
  • 500:$0.5853
  • 100:$0.6969
  • 14:$1.0531
SIHD1K4N60E-GE3
DISTI # SIHD1K4N60E-GE3		Vishay Intertechnologies- Tape and Reel (Alt: SIHD1K4N60E-GE3)
RoHS: Compliant
Min Qty: 2000
Container: Reel		Americas - 0
  • 20000:$0.4289
  • 12000:$0.4409
  • 8000:$0.4529
  • 4000:$0.4729
  • 2000:$0.4869
SIHD1K4N60E-GE3
DISTI # 99AC9554		Vishay IntertechnologiesMOSFET, N-CH, 4.2A, 600V, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:4.2A,Drain Source Voltage Vds:600V,On Resistance Rds(on):1.3ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power DissipationRoHS Compliant: Yes45
  • 500:$0.6430
  • 250:$0.6960
  • 100:$0.7480
  • 50:$0.8240
  • 25:$0.8990
  • 10:$0.9750
  • 1:$1.1800
SIHD1K4N60E-GE3
DISTI # 78-SIHD1K4N60E-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs DPAK (TO-252)
RoHS: Compliant		3000
  • 1:$1.1700
  • 10:$0.9650
  • 100:$0.7410
  • 500:$0.6370
  • 1000:$0.5030
  • 2500:$0.4690
  • 5000:$0.4460
  • 10000:$0.4290
SIHD1K4N60E-GE3
DISTI # 3019080		Vishay IntertechnologiesMOSFET, N-CH, 4.2A, 600V, TO-25245
  • 500:£0.4620
  • 250:£0.5000
  • 100:£0.5370
  • 10:£0.7530
  • 1:£0.9690
SIHD1K4N60E-GE3
DISTI # 3019080		Vishay IntertechnologiesMOSFET, N-CH, 4.2A, 600V, TO-252
RoHS: Compliant		45
  • 1000:$0.5930
  • 500:$0.7490
  • 250:$0.8380
  • 100:$0.9230
  • 25:$1.2500
  • 5:$1.3700
Immagine Parte # Descrizione
NCP81074BDR2G

Mfr.#: NCP81074BDR2G

OMO.#: OMO-NCP81074BDR2G

 Gate Drivers Single Low Side MOSF
ECLAMP2357NQTLT

Mfr.#: ECLAMP2357NQTLT

OMO.#: OMO-ECLAMP2357NQTLT

 TVS Diodes / ESD Suppressors AEC-Q100 QUALIFIED, EMI/ESD
ADUM110N0BRZ

Mfr.#: ADUM110N0BRZ

OMO.#: OMO-ADUM110N0BRZ

 Digital Isolators 1 Channel 3kV Digital Isolator
ISO7420FEDR

Mfr.#: ISO7420FEDR

OMO.#: OMO-ISO7420FEDR

 Digital Isolators Lo-Pwr Dual Channel Dig Iso
PIC32MZ2048EFH100-I/PF

Mfr.#: PIC32MZ2048EFH100-I/PF

OMO.#: OMO-PIC32MZ2048EFH100-I-PF

 32-bit Microcontrollers - MCU 32-BIT MCU 2048KB FL 512KB RAM, No Crypto
PIC18F27K42-E/ML

Mfr.#: PIC18F27K42-E/ML

OMO.#: OMO-PIC18F27K42-E-ML

 8-bit Microcontrollers - MCU 128KB Flash, 8KB RAM, 1KB EEPROM, 12-bit ADC2, Vector Interrupts, DMA, MAP, DIA, DAC, Comp, PWM, CWG, HLT, WWDT, SCAN/CRC, ZCD, PPS, UART, SPI/I2C, IDLE/DOZE/PMD
STM32G070CBT6

Mfr.#: STM32G070CBT6

OMO.#: OMO-STM32G070CBT6

 ARM Microcontrollers - MCU Arm Cortex -M0+ 32-bit MCU, 128 KB Flash, 36 KB RAM, 4x USART, timers, ADC, comm. I/Fs, 2.0-3.6V
ECLAMP2357NQTLT

Mfr.#: ECLAMP2357NQTLT

OMO.#: OMO-ECLAMP2357NQTLT-SEMTECH

 FILTER LC(PI) 100 OHM/12PF SMD
STM32G070CBT6

Mfr.#: STM32G070CBT6

OMO.#: OMO-STM32G070CBT6-1190

 - Trays (Alt: STM32G070CBT6)
PIC18F27K42-E/ML

Mfr.#: PIC18F27K42-E/ML

OMO.#: OMO-PIC18F27K42-E-ML-MICROCHIP-TECHNOLOGY

 128KB Flash, 8KB RAM, 1KB EEPROM, 12-bit ADC2, Vector Interrupts, DMA, MAP, DIA, DAC, Comp, PWM, CWG
Disponibilità
Azione:
Available
Su ordine:
1985
Inserisci la quantità:
Il prezzo attuale di SIHD1K4N60E-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
1,17 USD
1,17 USD
10
0,97 USD
9,65 USD
100
0,74 USD
74,10 USD
500
0,64 USD
318,50 USD
1000
0,50 USD
503,00 USD
2500
0,47 USD
1 172,50 USD
5000
0,45 USD
2 230,00 USD
10000
0,43 USD
4 290,00 USD
25000
0,42 USD
10 400,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
Iniziare con
Prodotti più recenti
  • -12 V and -20 V P-Channel Gen III MOSFETs
    -12 V and -20 V P-Channel Gen III MOSFETs
    Vishay's TrenchFET® MOSFETs features low on-resistance for -12 V and -20 V devices, allowing for lower voltage drops.
  • Compare SIHD1K4N60E-GE3
    Compare SIHD1K4N60E-GE3
    SIHD12N50E vs SIHD12N50EGE3 vs SIHD14N60EGE3
  • DG2788A Dual DPDT / Quad SPDT Analog Switch
    DG2788A Dual DPDT / Quad SPDT Analog Switch
    Vishay introduces the dual DPDT / quad SPDT analog switch featuring low resistance of 0.37 Ω at 2.7 V in the compact 2.6 mm x 1.8 mm x 0.55 mm miniQFN16 package.
  • Smart Load Switches
    Smart Load Switches
    Vishay's smart load switch features a simplified GPIO control can be used to implement power distribution and sequencing of multiple-sub-systems.
  • SUM70101EL 100 V P-Channel MOSFET
    SUM70101EL 100 V P-Channel MOSFET
    Vishay Siliconix's SUM70101EL MOSFET has industry leading RDS(ON) (0.0101 Ω at -10 V and 0.015 Ω at -4.5 V) minimizes conduction loss and increases efficiency.
  • DGQ2788A AEC-Q100 Qualified Analog Switch
    DGQ2788A AEC-Q100 Qualified Analog Switch
    The wide operation voltage range, low resistance, and high bandwidth of Vishay Siliconix's DGQ2788A make it ideal for a variety of design needs, simplifying the BOM.
More Newest Products
Top