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PD55003S-E

PD55003S-E
Mfr. #:
PD55003S-E
Produttore:
STMicroelectronics
Descrizione:
RF MOSFET Transistors POWER R.F.
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
PD55003S-E Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
PD55003S-E DatasheetPD55003S-E Datasheet (P4-P6)PD55003S-E Datasheet (P7-P9)PD55003S-E Datasheet (P10-P12)PD55003S-E Datasheet (P13-P15)PD55003S-E Datasheet (P16-P18)PD55003S-E Datasheet (P19-P21)PD55003S-E Datasheet (P22-P24)PD55003S-E Datasheet (P25-P27)PD55003S-E Datasheet (P28-P29)
ECAD Model:
Maggiori informazioni:
PD55003S-E maggiori informazioni PD55003S-E Product Details
Attributo del prodotto
Valore attributo
Produttore:
STMicroelectronics
Categoria di prodotto:
Transistor MOSFET RF
RoHS:
Y
Polarità del transistor:
Canale N
Tecnologia:
si
Id - Corrente di scarico continua:
2.5 A
Vds - Tensione di rottura Drain-Source:
40 V
Guadagno:
17 dB
Potenza di uscita:
3 W
Temperatura di esercizio minima:
- 65 C
Temperatura massima di esercizio:
+ 150 C
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
PowerSO-10RF-Straight-4
Confezione:
Tubo
Configurazione:
Separare
Altezza:
3.5 mm
Lunghezza:
7.5 mm
Frequenza operativa:
1 GHz
Serie:
PD55003-E
Tipo:
MOSFET di potenza RF
Larghezza:
9.4 mm
Marca:
STMicroelectronics
Modalità canale:
Aumento
Sensibile all'umidità:
sì
Pd - Dissipazione di potenza:
31.7 W
Tipologia di prodotto:
Transistor MOSFET RF
Quantità confezione di fabbrica:
400
sottocategoria:
MOSFET
Vgs - Tensione Gate-Source:
20 V
Unità di peso:
0.105822 oz
Tags
PD55003S, PD55003, PD5500, PD550, PD55, PD5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans RF MOSFET N-CH 40V 2.5A 3-Pin PowerSO-10RF (Straight lead) Tube
***icroelectronics
3W 12.5V 500MHz LDMOS in PowerSO-10RF plastic package
***r Electronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***ark
Rf Fet Transistor, 40 V, 2.5 A, 31.7 W, 1 Ghz, Powerso-10Rf Rohs Compliant: Yes
***ure Electronics
PD55003-E Series 500 MHz 3 W N-Channel RF Power Transistor - POWERSO-10RF
***p One Stop
Trans RF MOSFET N-CH 40V 2.5A 3-Pin PowerSO-10RF (Formed lead) Tube
***icroelectronics
3W 12.5V 500MHz LDMOS in PowerSO-10RF plastic package
***roFlash
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***nell
MOSFET, RF, N-CH, 40V, 2.5A, POWERSO; Drain Source Voltage Vds: 40V; Continuous Drain Current Id: 2.5A; Power Dissipation Pd: 31.7W; Operating Frequency Min: -; Operating Frequency Max: 1GHz; RF Transistor Case: PowerSO-10RF;
***icroelectronics
3W 12.5V 500MHz LDMOS in PowerSO-10RF plastic package
***ical
Trans RF MOSFET N-CH 40V 2.5A 3-Pin PowerSO-10RF (Formed lead) T/R
***icroelectronics SCT
RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs
***r Electronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
*** Stop Electro
RF Power Field-Effect Transistors
***ser
RF Integrated Circuits POWER R.F.
***ure Electronics
N-CHANNEL 40 V 0.045 Ohm 0.75 W Power Mosfet Surface Mount - SOT-23-3
***ical
Trans MOSFET N-CH 40V 3A 3-Pin SOT-23 T/R
***enic
40V 3A 750mW 45m´Î@10V3.9A 3V@250Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS
***icontronic
Power Field-Effect Transistor, 3A I(D), 40V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
***ark
N Channel Mosfet, 40V, 3.9A, To-236, Full Reel; Transistor Polarity:n Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:3.9A; On Resistance Rds(On):0.036Ohm; Transistor Mounting:surface Mount; No. Of Pins:3Pins Rohs Compliant: No
***ment14 APAC
MOSFET,N CH,40V,3A,SOT23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:3.9A; Drain Source Voltage Vds:40V; On Resistance Rds(on):36mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:750mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Id Max:3A; Power Dissipation Pd:750mW; Voltage Vgs Max:20V
***ure Electronics
Si2318DS Series 40 V 3.9 A 45 mOhm SMT N-Channel MOSFET - SOT-23-3
***icontronic
Power Field-Effect Transistor, 3A I(D), 40V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
***ment14 APAC
N CH MOSFET; Transistor Polarity:N Chann; N CH MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:40V; On Resistance Rds(on):36mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:750mW; No. of Pins:3
***ark
Lateral N-Channel Broadband Rf Power Mosfet, 520 Mhz, 3 W, 12.5 V
***W
RF Power Transistor, 0.135 to 0.52 GHz, 3 W, Typ Gain in dB is 15 @ 520 MHz, 12.5 V, SOT1811-1, LDMOS
*** Stop Electro
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***ment14 APAC
MOSFET, N, RF, PLD-1.5; Transistor Type:RF MOSFET; Drain Source Voltage Vds:40V; Continuous Drain Current Id:2A; Power Dissipation Pd:31.25W; RF Transistor Case:PLD-1.5; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Gain:15dB; Output Power:3W; Package / Case:PLD-1.5; Power Dissipation Max:31.25W; Power Dissipation Pd:31.25W; Termination Type:SMD; Transistor Case Style:PLD-1.5; Transistor Polarity:N Channel; Voltage Vds:650mV
***Yang
Transistor: N-MOSFET, unipolar, 30V, 2.7A, 0.1ohm, 1.3W, -55+150 deg.C, SMD, SOT23
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS
*** Source Electronics
MOSFET N-CH 30V 2.7A SOT-23-3 / Trans MOSFET N-CH 30V 2.7A 3-Pin SOT-23 T/R
***ure Electronics
Single N-Channel 30 V 154 mOhm 1 nC HEXFET® Power Mosfet - SOT-23
*** Electronics
IRLML2030TRPBF Infineon MOSFET N-Ch 30V 2.7A 3-PinSOT-23 T/R RoHS
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Power dissipation: 1.3 W
***(Formerly Allied Electronics)
MOSFET, 30V, 2.7A, 100 MOHM, 1.0 NC QG,SOT-23
***roFlash
Power Field-Effect Transistor, 2.7A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
***ineon
Benefits: RoHS Compliant; Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified MSL1; SOT-23 Footprint | Target Applications: Battery Protection; DC Switches; Load Switch; Load Switch High Side; Load Switch Low Side
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2.7A; On Resistance Rds(On):0.08Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V Rohs Compliant: Yes
***ment14 APAC
MOSFET, N CH, 30V, 2.7A, SOT-23; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.3W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:2.7A; Power Dissipation Pd:1.3W; Voltage Vgs Max:20V
Parte # Mfg. Descrizione Azione Prezzo
PD55003S-E
DISTI # V79:2366_17782215		STMicroelectronicsTrans RF MOSFET N-CH 40V 2.5A 3-Pin PowerSO-10RF (Straight lead) Tube
RoHS: Compliant		2
  • 10:$11.9949
  • 1:$12.3890
PD55003S-E
DISTI # 497-5298-5-ND		STMicroelectronicsFET RF 40V 500MHZ PWRSO10
RoHS: Compliant
Min Qty: 400
Container: Tube		Temporarily Out of Stock
  • 400:$9.2690
PD55003S-E
DISTI # 26113453		STMicroelectronicsTrans RF MOSFET N-CH 40V 2.5A 3-Pin PowerSO-10RF (Straight lead) Tube
RoHS: Compliant		2
  • 1:$12.3390
PD55003S-E
DISTI # PD55003S-E		STMicroelectronicsTrans MOSFET N-CH 40V 2.5A 4-Pin(2+2Tab) PowerSO-10RF (Straight lead) Tube - Bag (Alt: PD55003S-E)
RoHS: Compliant
Min Qty: 400
Container: Bag		Americas - 0
  • 400:$8.8900
  • 800:$8.4900
  • 1600:$8.0900
  • 2400:$7.6900
  • 4000:$7.5900
PD55003S-E
DISTI # 511-PD55003S-E		STMicroelectronicsRF MOSFET Transistors POWER R.F.
RoHS: Compliant		0
  • 1:$12.5600
  • 10:$11.5500
  • 25:$11.0700
  • 100:$9.7500
  • 250:$9.2700
  • 500:$8.6800
  • 1000:$7.9600
PD55003STR-E
DISTI # 511-PD55003STR-E		STMicroelectronicsRF MOSFET Transistors POWER R.F.
RoHS: Compliant		0
    PD55003S-E
    DISTI # PD55003S-E    		STMicroelectronicsRF POWER TRANSISTOR
    RoHS: Compliant    		0
    • 400:$8.6800
    • 500:$8.2200
    • 1000:$7.8000
    PD55003S-E
    DISTI # C1S730200607625    		STMicroelectronicsTrans RF MOSFET N-CH 40V 2.5A 3-Pin(2+Tab) PowerSO-10RF (Straight lead) Tube
    RoHS: Compliant    		2
    • 1:$12.0450
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    Disponibilità
    Azione:
    396
    Su ordine:
    2379
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    Il prezzo attuale di PD55003S-E è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    12,56 USD
    12,56 USD
    10
    11,55 USD
    115,50 USD
    25
    11,07 USD
    276,75 USD
    100
    9,75 USD
    975,00 USD
    250
    9,27 USD
    2 317,50 USD
    500
    8,68 USD
    4 340,00 USD
    1000
    7,96 USD
    7 960,00 USD
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