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RGT8BM65DTL

RGT8BM65DTL
Mfr. #:
RGT8BM65DTL
Produttore:
Rohm Semiconductor
Descrizione:
IGBT Transistors 650V 4A IGBT Stop Trench
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
RGT8BM65DTL Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
RGT8BM65DTL maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Semiconduttore ROHM
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Pacchetto/custodia:
TO-252-3
Stile di montaggio:
SMD/SMT
Tensione collettore-emettitore VCEO Max:
650 V
Tensione di saturazione collettore-emettitore:
1.65 V
Tensione massima dell'emettitore di gate:
30 V
Corrente continua del collettore a 25 C:
8 A
Pd - Dissipazione di potenza:
62 W
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 175 C
Serie:
RGT8BM65D
Confezione:
Bobina
Corrente continua del collettore Ic Max:
8 A
Intervallo operativo di temperatura:
- 40 C to + 175 C
Marca:
Semiconduttore ROHM
Corrente continua del collettore:
4 A
Corrente di dispersione gate-emettitore:
+/- 200 nA
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
2500
sottocategoria:
IGBT
Parte # Alias:
RGT8BM65D
Unità di peso:
0.139332 oz
Tags
RGT8, RGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans IGBT Chip N-CH 650V 8A 62000mW 3-Pin(2+Tab) CPT T/R
***ure Electronics
RGT8BM65D Series 650 V 8 A 62 W Field Stop Trench IGBT - TO-252-3
***i-Key
IGBT TRENCH FIELD 650V 8A TO252
***nell
IGBT, SINGLE, 650V, 8A, TO-252-3; DC Collector Current: 8A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 62W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
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***el Electronic
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***icontronic
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***inecomponents.com
POWER IGBT UFS 3A 600V TF=275NS MAX TO-252 TAPE AND REEL
***ser
IGBTs 6a, 600V N-Ch IGBT UFS Series
***ponent Stockers USA
6 A 600 V N-CHANNEL IGBT TO-252AA
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 220pF 100volts C0G +/-5% Hi Rel
***r Electronics
Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252AA
***ser
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*** Electronic Components
IGBT Transistors N-Ch 600 Volt 3.0 A
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IRG4RC10K Series 600 V 9 A Surface Mount UltraFast Speed IGBT - TO-252AA
***(Formerly Allied Electronics)
IGBT, N-Channel, 600V, 8.5A, D-Pak TO-252AA | Infineon IRG4RC10KDTRPBF
***nell
IGBT, COPAK, D-PAK; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:9A; Voltage, Vce Sat Max:2.39V; Power Dissipation:38W; Case Style:D-PAK; Termination Type:SMD; Alternate Case Style:TO-252; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:18A; Power, Pd:38W; Time, Rise:24ns
***-Wing Technology
Tape & Reel (TR) Surface Mount ROHS3Compliant IGBT Transistor 2.6V @ 15V 5A 8.5A 38W 28ns
***ical
Trans IGBT Chip N-CH 600V 8.5A 38000mW 3-Pin(2+Tab) DPAK T/R
***(Formerly Allied Electronics)
600V ULTRAFAST 8-60 KHZ COPACK IGBT IN A D-PAK PACKAGE | Infineon IRG4RC10UDPBF
***nell
IGBT, D-PAK; DC Collector Current: 8.5A; Collector Emitter Saturation Voltage Vce(on): 2.6V; Power Dissipation Pd: 38W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Ic Continuous a Max: 5A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; No. of Transistors: 1; Operating Temperature Min: -55°C; Power Dissipation Max: 38W; Pulsed Current Icm: 34A; Rise Time: 16ns; Termination Type: Surface Mount Device; Transistor Polarity: N Channel; Transistor Type: IGBT; Voltage Vces: 600V
***ical
Trans IGBT Chip N-CH 600V 6A 48000mW Automotive 3-Pin(2+Tab) DPAK T/R
***icroelectronics
N-channel 3 A, 600 V low drop IGBT
***ure Electronics
STGD3NB60SD Series 600 V 3 A Surface Mount N-Channel PowerMESH™ IGBT - DPAK-3
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252
***ser
IGBTs Insulated Gate Bipolar Transistor N-Ch 600 Volt 3 Amp
Field Stop Trench IGBTs
ROHM Field Stop Trench IGBTs are energy saving high-efficiency IGBTs used in a wide range of high-voltage and high-current applications. These IGBTs feature a low collector and emitter saturation voltage, short-circuit withstand time, and built-in very fast & soft recovery FRD. The field stop trench IGBTs are ideal for UPS, power conditioner, welder, and general inverters for industrial use.
Parte # Mfg. Descrizione Azione Prezzo
RGT8BM65DTL
DISTI # RGT8BM65DTLTR-ND		ROHM SemiconductorIGBT 650V 8A 62W TO-252
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2500:$0.8680
RGT8BM65DTL
DISTI # RGT8BM65DTLCT-ND		ROHM SemiconductorIGBT 650V 8A 62W TO-252
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.9260
  • 500:$1.1176
  • 250:$1.2772
  • 100:$1.3602
  • 25:$1.5964
  • 10:$1.6920
  • 1:$1.8800
RGT8BM65DTL
DISTI # RGT8BM65DTLDKR-ND		ROHM SemiconductorIGBT 650V 8A 62W TO-252
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.9260
  • 500:$1.1176
  • 250:$1.2772
  • 100:$1.3602
  • 25:$1.5964
  • 10:$1.6920
  • 1:$1.8800
RGT8BM65DTL
DISTI # RGT8BM65DTL		ROHM SemiconductorTrans IGBT Chip N-CH 650V 8A 3-Pin TO-252 T/R (Alt: RGT8BM65DTL)
RoHS: Compliant
Min Qty: 1
Container: Tape and Reel		Europe - 0
  • 1000:€0.4779
  • 500:€0.5149
  • 100:€0.5579
  • 50:€0.6079
  • 25:€0.6689
  • 10:€0.7439
  • 1:€0.8369
RGT8BM65DTL
DISTI # RGT8BM65DTL		ROHM SemiconductorTrans IGBT Chip N-CH 650V 8A 3-Pin TO-252 T/R - Tape and Reel (Alt: RGT8BM65DTL)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.4479
  • 15000:$0.4599
  • 10000:$0.4869
  • 5000:$0.5169
  • 2500:$0.5519
RGT8BM65DTL
DISTI # 755-RGT8BM65DTL		ROHM SemiconductorIGBT Transistors 650V 4A IGBT Stop Trench
RoHS: Compliant		1400
  • 1:$1.8300
  • 10:$1.5500
  • 100:$1.2400
  • 500:$1.0900
  • 1000:$0.8990
  • 2500:$0.8380
  • 5000:$0.8070
  • 10000:$0.7750
RGT8BM65DTL
DISTI # 2519785		ROHM SemiconductorIGBT, SINGLE, 650V, 8A, TO-252-3
RoHS: Compliant		0
  • 1000:$1.4100
  • 500:$1.7000
  • 250:$1.9400
  • 100:$2.0700
  • 25:$2.4300
  • 10:$2.5800
  • 1:$2.8500
RGT8BM65DTL
DISTI # IGBT1479		ROHM SemiconductorIGBT650V8A30VDPack
RoHS: Compliant		Stock DE - 0Stock HK - 0Stock US - 0
  • 2500:$0.7175
  • 5000:$0.6733
  • 7500:$0.6513
RGT8BM65DTLROHM Semiconductor 2500
  • 1:¥14.2929
  • 100:¥8.1041
  • 1250:¥5.1380
  • 2500:¥3.8278
RGT8BM65DTLROHM SemiconductorIGBT Transistors 650V 4A IGBT Stop Trench
RoHS: Compliant		Americas -
    Immagine Parte # Descrizione
    RGT8BM65DTL

    Mfr.#: RGT8BM65DTL

    OMO.#: OMO-RGT8BM65DTL

    		 IGBT Transistors 650V 4A IGBT Stop Trench
    RGT8BM65DTL

    Mfr.#: RGT8BM65DTL

    OMO.#: OMO-RGT8BM65DTL-ROHM-SEMI

    		 IGBT Transistors 650V 4A Field Stop Trench IGBT
    RGT8BM65D

    Mfr.#: RGT8BM65D

    OMO.#: OMO-RGT8BM65D-1190

    		 Insulated Gate Bipolar Transistor, 8A I(C), 650V V(BR)CES, N-Channel, TO-252
    Disponibilità
    Azione:
    Available
    Su ordine:
    1984
    Inserisci la quantità:
    Il prezzo attuale di RGT8BM65DTL è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    1,83 USD
    1,83 USD
    10
    1,55 USD
    15,50 USD
    100
    1,24 USD
    124,00 USD
    500
    1,09 USD
    545,00 USD
    1000
    0,90 USD
    899,00 USD
    A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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