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IXFB100N50Q3

IXFB100N50Q3
Mfr. #:
IXFB100N50Q3
Produttore:
Littelfuse
Descrizione:
MOSFET Q3Class HiPerFET Pwr MOSFET 500V/100A
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IXFB100N50Q3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFB100N50Q3 DatasheetIXFB100N50Q3 Datasheet (P4-P5)
ECAD Model:
Maggiori informazioni:
IXFB100N50Q3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
IXYS
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
PLUS-264-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
500 V
Id - Corrente di scarico continua:
100 A
Rds On - Resistenza Drain-Source:
49 mOhms
Vgs - Tensione Gate-Source:
30 V
Qg - Carica cancello:
255 nC
Pd - Dissipazione di potenza:
1.56 kW
Configurazione:
Separare
Nome depositato:
HiPerFET
Confezione:
Tubo
Serie:
IXFB100N50
Tipo di transistor:
1 N-Channel
Marca:
IXYS
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
250 ns
Quantità confezione di fabbrica:
25
sottocategoria:
MOSFET
Unità di peso:
0.056438 oz
Tags
IXFB100N5, IXFB10, IXFB1, IXFB, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
HiPerFET Power MOSFETs - EXPANSION
IXYS has expanded the HiPerFET MOSTET family by introducing the Q3-Class products. The new Q3-Class provide up to a 25 percent reduction in on-state resistance, 27 percent reduction in input capacitance, 28 percent reduction in gate chare, 41 percent increase in maximum power dissipation, and up to 50 percent reduction in thermal resistances.Learn more.These high-current, Polar HT™/HV™ HiPerFET™ power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These HiPerFET MOSFETs are available in standard industrial packages, including isolated types.View all HiPerFET MOSFETs.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Parte # Mfg. Descrizione Azione Prezzo
IXFB100N50Q3
DISTI # V99:2348_15877763		IXYS CorporationTrans MOSFET N-CH 500V 100A 3-Pin(3+Tab) PLUS 264
RoHS: Compliant		25
  • 1:$17.5831
IXFB100N50Q3
DISTI # V36:1790_15877763		IXYS CorporationTrans MOSFET N-CH 500V 100A 3-Pin(3+Tab) PLUS 264
RoHS: Compliant		0
  • 100:$22.8800
  • 25:$24.5300
  • 1:$28.3200
IXFB100N50Q3
DISTI # IXFB100N50Q3-ND		IXYS CorporationMOSFET N-CH 500V 100A PLUS264
RoHS: Compliant
Min Qty: 1
Container: Tube		9In Stock
  • 100:$24.5374
  • 25:$26.4012
  • 10:$28.7310
  • 1:$31.0600
IXFB100N50Q3
DISTI # 25894622		IXYS CorporationTrans MOSFET N-CH 500V 100A 3-Pin(3+Tab) PLUS 264
RoHS: Compliant		25
  • 1:$17.5831
IXFB100N50Q3
DISTI # 747-IXFB100N50Q3		IXYS CorporationMOSFET Q3Class HiPerFET Pwr MOSFET 500V/100A
RoHS: Compliant		14
  • 1:$31.0700
  • 5:$29.5200
  • 10:$28.7400
  • 25:$26.4100
  • 50:$25.2800
  • 100:$24.5400
  • 250:$22.5200
IXFB100N50Q3
DISTI # 8011364P		IXYS CorporationMOSFET NCH 500V 100A Q3 HIPERFET PLUS264, TU11
  • 25:£19.6200
  • 10:£20.3300
  • 5:£21.2800
IXFB100N50Q3
DISTI # 2674743		IXYS CorporationMOSFET, N-CH, 650V, 100A, PLUS264
RoHS: Compliant		0
  • 1000:$34.0900
  • 500:$34.6600
  • 250:$35.8600
  • 100:$37.1400
  • 10:$39.2400
  • 1:$40.0000
IXFB100N50Q3
DISTI # 2674743		IXYS CorporationMOSFET, N-CH, 650V, 100A, PLUS264
RoHS: Compliant		3
  • 100:£14.6400
  • 50:£15.4300
  • 10:£16.0700
  • 5:£18.0200
  • 1:£18.9600
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SM102035007FE

Mfr.#: SM102035007FE

OMO.#: OMO-SM102035007FE-OHMITE

 Thick Film Resistors - Through Hole 5000M ohms 1%
SM102031005FE

Mfr.#: SM102031005FE

OMO.#: OMO-SM102031005FE-OHMITE

 Thick Film Resistors - Through Hole 10M ohms 1%
Disponibilità
Azione:
14
Su ordine:
1997
Inserisci la quantità:
Il prezzo attuale di IXFB100N50Q3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
31,07 USD
31,07 USD
5
29,52 USD
147,60 USD
10
28,74 USD
287,40 USD
25
26,41 USD
660,25 USD
50
25,28 USD
1 264,00 USD
100
24,54 USD
2 454,00 USD
250
22,52 USD
5 630,00 USD
500
21,44 USD
10 720,00 USD
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