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FDT86102LZ

FDT86102LZ
Mfr. #:
FDT86102LZ
Produttore:
ON Semiconductor
Descrizione:
MOSFET N-CH 100V 6.6A SOT-223
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FDT86102LZ Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
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ECAD Model:
Maggiori informazioni:
FDT86102LZ maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
Fairchi
categoria di prodotto
FET - Single
Serie
PowerTrenchR
Confezione
Imballaggio alternativo Digi-ReelR
Unità di peso
0.008826 oz
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
TO-261-4, TO-261AA
Tecnologia
si
Temperatura di esercizio
-55°C ~ 150°C (TJ)
Tipo di montaggio
Montaggio superficiale
Numero di canali
1 Channel
Pacchetto-dispositivo-fornitore
SOT-223-4
Tipo FET
MOSFET N-Channel, ossido di metallo
Potenza-Max
1W
Tipo a transistor
1 N-Channel
Drain-to-Source-Voltage-Vdss
100V
Ingresso-Capacità-Ciss-Vds
1490pF @ 50V
Funzione FET
Standard
Corrente-Continuo-Scarico-Id-25°C
6.6A (Ta)
Rds-On-Max-Id-Vgs
28 mOhm @ 6.6A, 10V
Vgs-th-Max-Id
3V @ 250μA
Gate-Carica-Qg-Vgs
25nC @ 10V
Pd-Power-Dissipazione
2.2 W
Massima temperatura di esercizio
+ 150 C
Id-Continuo-Scarico-Corrente
6.6 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Rds-On-Drain-Source-Resistenza
28 mOhms
Polarità del transistor
Canale N
Qg-Gate-Carica
17 nC
Transconduttanza diretta-Min
26 S
Tags
FDT86102, FDT8610, FDT861, FDT8, FDT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 100 V 6.6 A 28 mOhm PowerTrench® Mosfet - SOT-223
***Semiconductor
N-Channel PowerTrench® MOSFET 100V, 6.6A, 28mΩ
***et Europe
Trans MOSFET N-CH 100V 6.6A 4-Pin(3+Tab) SOT-223 T/R
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level.
***ment14 APAC
MOSFET, N CH, 100V, 6.6A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:6.6A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.4V; Power Dissipation Pd:2.2W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-223; No. of Pins:4; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:40A; Voltage Vgs th Max:3V
Fairchild PowerTrench MOSFETs
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
N-Channel PowerTrench® MOSFETs
ON Semiconductor N-Channel PowerTrench® MOSFETs are produced using advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. ON Semiconductor N-Channel PowerTrench® MOSFETs are available in a variety of Drain to Source Voltage specifications, from 30V to 250V.The FDD10N20LZ and FDD7N25LZ are N-Channel enhancement mode power field effect transistors that are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction.The FDMC6296 is a single N-Channel MOSFET in a thermally efficient MicroFET Package that has been specifically designed to perform well in Point of Load converters. Providing an optimized balance between rDS(on) and gate charge this device can be effectively used as a "high side" control swtich or "low side" synchronous rectifier.Learn more
Parte # Mfg. Descrizione Azione Prezzo
FDT86102LZ
DISTI # FDT86102LZFSTR-ND		ON SemiconductorMOSFET N-CH 100V 6.6A SOT-223
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		On Order
  • 4000:$0.7425
FDT86102LZ
DISTI # FDT86102LZFSCT-ND		ON SemiconductorMOSFET N-CH 100V 6.6A SOT-223
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.8214
  • 500:$0.9914
  • 100:$1.2746
  • 10:$1.5860
  • 1:$1.7600
FDT86102LZ
DISTI # FDT86102LZFSDKR-ND		ON SemiconductorMOSFET N-CH 100V 6.6A SOT-223
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.8214
  • 500:$0.9914
  • 100:$1.2746
  • 10:$1.5860
  • 1:$1.7600
FDT86102LZ
DISTI # FDT86102LZ		ON SemiconductorTrans MOSFET N-CH 100V 6.6A 4-Pin(3+Tab) SOT-223 T/R (Alt: FDT86102LZ)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel		Asia - 0
    FDT86102LZ
    DISTI # FDT86102LZ    		ON SemiconductorTrans MOSFET N-CH 100V 6.6A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: FDT86102LZ)
    RoHS: Compliant
    Min Qty: 4000
    Container: Reel    		Americas - 0
    • 4000:$0.6529
    • 8000:$0.6489
    • 16000:$0.6409
    • 24000:$0.6319
    • 40000:$0.6169
    FDT86102LZ
    DISTI # 27T6450    		ON SemiconductorMOSFET Transistor, N Channel, 6.6 A, 100 V, 0.022 ohm, 10 V, 1.4 V0
    • 1:$0.6750
    • 4000:$0.6630
    • 8000:$0.6500
    • 16000:$0.6250
    • 24000:$0.6020
    • 40000:$0.6000
    FDT86102LZ.
    DISTI # 29AC6323    		Fairchild Semiconductor CorporationFET 100V 28.0 MOHM SOT223 ROHS COMPLIANT: YES0
    • 1:$0.6750
    • 4000:$0.6630
    • 8000:$0.6500
    • 16000:$0.6250
    • 24000:$0.6020
    • 40000:$0.6000
    FDT86102LZ
    DISTI # 512-FDT86102LZ    		ON SemiconductorMOSFET 100V N-Channel PowerTrench MOSFET
    RoHS: Compliant    		0
    • 1:$1.4800
    • 10:$1.2500
    • 100:$1.0000
    • 500:$0.8760
    • 1000:$0.7250
    • 4000:$0.6510
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    OMO.#: OMO-FDT86256

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    FDT86102

    Mfr.#: FDT86102

    OMO.#: OMO-FDT86102-1190

    		 Nuovo e originale
    FDT86102LZ

    Mfr.#: FDT86102LZ

    OMO.#: OMO-FDT86102LZ-ON-SEMICONDUCTOR

    		 MOSFET N-CH 100V 6.6A SOT-223
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    Mfr.#: FDT86106

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    		 Nuovo e originale
    FDT86113LZFAI

    Mfr.#: FDT86113LZFAI

    OMO.#: OMO-FDT86113LZFAI-1190

    		 Nuovo e originale
    FDT86256

    Mfr.#: FDT86256

    OMO.#: OMO-FDT86256-ON-SEMICONDUCTOR

    		 MOSFET N-CH 150V 1.2A SOT-223-4
    Disponibilità
    Azione:
    Available
    Su ordine:
    4500
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