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FGA25N120ANTDTU

FGA25N120ANTDTU
Mfr. #:
FGA25N120ANTDTU
Produttore:
ON Semiconductor / Fairchild
Descrizione:
IGBT Transistors Copak Discrete
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FGA25N120ANTDTU Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
FGA25N120ANTDTU maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Pacchetto/custodia:
TO-3P-3
Stile di montaggio:
Foro passante
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
1200 V
Tensione di saturazione collettore-emettitore:
2 V
Tensione massima dell'emettitore di gate:
20 V
Corrente continua del collettore a 25 C:
50 A
Pd - Dissipazione di potenza:
312 W
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Serie:
FGA25N120ANTD
Confezione:
Tubo
Corrente continua del collettore Ic Max:
50 A
Altezza:
18.9 mm
Lunghezza:
15.8 mm
Larghezza:
5 mm
Marca:
ON Semiconductor / Fairchild
Corrente continua del collettore:
25 A
Corrente di dispersione gate-emettitore:
+/- 250 nA
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
450
sottocategoria:
IGBT
Parte # Alias:
FGA25N120ANTDTU_NL
Unità di peso:
0.225789 oz
Tags
FGA25N120ANTDT, FGA25N120ANTD, FGA25N120ANT, FGA25N120AN, FGA25N120A, FGA25N12, FGA25N, FGA25, FGA2, FGA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N=-CH 1200V 50A 312000mW 3-Pin(3+Tab) TO-3PN Rail
***eco
Transistor IGBT Chip N Channel 1.2k Volt 50 Amp 3-Pin 3+ Tab TO-3PN Rail
***ure Electronics
FGA25N120ANTD Series 1200 V 50 A Flange Mont NPT Trench IGBT - TO-3PN
***el Electronic
In a Pack of 2, ON Semiconductor FGA25N120ANTDTU IGBT, 50 A 1200 V, 3-Pin TO-3P
***ment14 APAC
IGBT, NPT, TO-3PN; DC Collector Current:50A; Collector Emitter Voltage Vces:2.5V; Power Dissipation Pd:312mW; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-3PN; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:50A; Package / Case:TO-3PN; Power Dissipation Max:312W; Power Dissipation Pd:312mW; Pulsed Current Icm:90A; Rise Time:60ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
***th Star Micro
Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating, microwave oven, etc.
***ernational Rectifier
1200V UltraFast Discrete IGBT in a TO-247 package with Ultra-Low Vf Diode
***et
Trans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247AC
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247AC
***(Formerly Allied Electronics)
1200V TRENCH IGBT FOR INDUCTION COOKING50A COPAK-247
*** Electronic Components
IGBT Transistors 1200V Trench IGBT Inductn Cooking 50A
***Yang
, IGBT, N, , 1200V, 50A, TO-247AC
***nell
IGBT,N CH,DIODE,1200V,50A,TO-247AC; Transistor Type:IGBT; DC Collector Current:50A; Collector Emitter Voltage Vces:1.9V; Power Dissipation Pd:179W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:179W
***ical
Trans IGBT Chip N-CH 1200V 50A 428000mW 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247AB
***emi
IGBT, 1200V, 25A Field Stop Trench
***ark
RAIL/1200V 25A FS2 Trench IGBT
*** Stop Electro
Insulated Gate Bipolar Transistors
***rchild Semiconductor
Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications.
***ource
43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode43A, 1200V,,NPTN£¨
*** Source Electronics
Trans IGBT Chip N-CH 1200V 43A 298000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 1200V 43A 298W TO247
***ure Electronics
HGTG11N120CND Series 1200 V 43 A Flange Mount NPT N-Channel IGBT-TO-247
***ment14 APAC
IGBT, N; Transistor Type:IGBT; DC Collector Current:43A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:298W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Ic Continuous a Max:43A; Package / Case:TO-247; Power Dissipation Max:298W; Power Dissipation Pd:298W; Termination Type:SMD; Transistor Polarity:N Channel; Voltage Vces:1.2kV
***rchild Semiconductor
HGTG11N120CND is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies.
***ical
Trans IGBT Chip N=-CH 1200V 35A 298000mW 3-Pin(3+Tab) TO-220AB Rail
***ure Electronics
N-Channel 1200 V 35 A Flange Mount IGBT - TO-220AB
***r Electronics
Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-220AB
***rchild Semiconductor
HGTP10N120BN is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter, motor control and power supplies.
***ical
Trans IGBT Chip N-CH 1.2KV 43A 3-Pin(3+Tab) TO-247 Rail
***r Electronics
Insulated Gate Bipolar Transistor, 43A I(C), 1200V V(BR)CES, N-Channel, TO-247
***-Wing Technology
Tube Through Hole NPT SINGLE WITH BUILT-IN DIODE IGBT Transistor 2.4V @ 15V 11A 43A 298W 23ns/180ns
***Yang
PWR IGBT 35A 1200V NPT N-CHANNEL TO-247 - Bulk
***rchild Semiconductor
The HGTG11N120CN, HGTP11N120CN, and HGT1S11N120CNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
***ernational Rectifier
1200V UltraFast Discrete IGBT in a TO-247 package with Ultra-Low Vf Diode
***ical
Trans IGBT Chip N-CH 1200V 50A 179000mW 3-Pin(3+Tab) TO-247AD Tube
*** Source Electronics
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS | IGBT 1200V 50A 179W TO247
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
Parte # Mfg. Descrizione Azione Prezzo
FGA25N120ANTDTU
DISTI # V99:2348_06359648		ON SemiconductorTrans IGBT Chip N-CH 1200V 50A 312000mW 3-Pin(3+Tab) TO-3PN Rail450
  • 2500:$2.9220
  • 1000:$2.9810
  • 500:$3.1200
  • 250:$3.1589
  • 100:$3.3580
  • 10:$3.7480
  • 1:$4.1700
FGA25N120ANTDTU
DISTI # FGA25N120ANTDTU-ND		ON SemiconductorIGBT 1200V 50A 312W TO3P
RoHS: Compliant
Min Qty: 1
Container: Tube		797In Stock
  • 1350:$2.8739
  • 900:$3.4076
  • 450:$3.7976
  • 10:$4.8860
  • 1:$5.4400
FGA25N120ANTDTU-F109
DISTI # FGA25N120ANTDTU-F109-ND		ON SemiconductorIGBT 1200V 50A 312W TO3P
RoHS: Compliant
Min Qty: 1
Container: Tube		318In Stock
  • 1350:$1.8232
  • 900:$2.1382
  • 450:$2.3684
  • 10:$3.0110
  • 1:$3.3400
FGA25N120ANTDTU
DISTI # 30723170		ON SemiconductorTrans IGBT Chip N-CH 1200V 50A 312000mW 3-Pin(3+Tab) TO-3PN Rail450
  • 250:$3.1590
  • 100:$3.3580
  • 10:$3.7480
  • 3:$4.1690
FGA25N120ANTDTU
DISTI # FGA25N120ANTDTU		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FGA25N120ANTDTU)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 450:$2.2900
  • 900:$2.2900
  • 1800:$2.1900
  • 2700:$2.1900
  • 4500:$2.1900
FGA25N120ANTDTU
DISTI # FGA25N120ANTDTU		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-3P(N) Rail (Alt: FGA25N120ANTDTU)
RoHS: Compliant
Min Qty: 450		Asia - 0
    FGA25N120ANTDTU_F109
    DISTI # FGA25N120ANTDTU-F109    		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-3P(N) Rail (Alt: FGA25N120ANTDTU-F109)
    RoHS: Compliant
    Min Qty: 450    		Asia - 0
      FGA25N120ANTDTU_F109
      DISTI # FGA25N120ANTDTU-F109      		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FGA25N120ANTDTU-F109)
      RoHS: Compliant
      Min Qty: 450
      Container: Tube      		Americas - 0
      • 450:$1.2900
      • 900:$1.2900
      • 1800:$1.1900
      • 2700:$1.1900
      • 4500:$1.1900
      FGA25N120ANTDTU
      DISTI # 96K9932      		ON SemiconductorIGBT,NPT,TO-3PN,DC Collector Current:50A,Collector Emitter Saturation Voltage Vce(on):2.5V,Power Dissipation Pd:312W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,Product Range:- , RoHS Compliant: Yes1352
      • 1:$5.4400
      • 10:$4.8900
      • 25:$4.6700
      • 50:$4.4500
      • 100:$4.2300
      • 250:$4.0100
      • 500:$3.8000
      FGA25N120ANTDTU-F109
      DISTI # 48AC1076      		ON SemiconductorNPTTIGBT TO3PN 25A 1200V / TUBE0
      • 1:$3.1600
      • 100:$2.6000
      • 250:$2.4000
      • 500:$2.2400
      • 1000:$2.1100
      FGA25N120ANTDTU_F109
      DISTI # 20M1196      		ON SemiconductorN-ch / 25A 1200V NPT trench IGBT / RAIL0
      • 1:$3.4200
      • 10:$2.7600
      • 100:$2.2200
      • 500:$1.9400
      • 1000:$1.6100
      • 2500:$1.4800
      • 10000:$1.4100
      FGA25N120ANTDTU.
      DISTI # 15AC2937      		Fairchild Semiconductor CorporationDC Collector Current:50A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:312W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,Product Range:-,MSL:-0
      • 1:$5.4400
      • 10:$4.8900
      • 25:$4.6700
      • 50:$4.4500
      • 100:$4.2300
      • 250:$4.0100
      • 500:$3.8000
      FGA25N120ANTDTU IGBT0
        FGA25N120ANTDTU_F109 IGBT0
          FGA25N120ANTDTU_NL IGBT0
            FGA25N120ANTDTUFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel
            RoHS: Compliant            		5859
            • 1000:$4.1600
            • 500:$4.3800
            • 100:$4.5600
            • 25:$4.7600
            • 1:$5.1200
            FGA25N120ANTDTUON SemiconductorFGA25N120ANTD Series 1200 V 50 A Flange Mont NPT Trench IGBT - TO-3PN
            RoHS: Compliant            		45Tube
            • 5:$3.3700
            • 50:$2.9100
            • 200:$2.5500
            FGA25N120ANTDTU
            DISTI # 512-FGA25N120ANTDTU            		ON SemiconductorIGBT Transistors Copak Discrete
            RoHS: Compliant            		15
            • 1:$5.1800
            • 10:$4.4000
            • 100:$3.8200
            • 250:$3.6200
            • 500:$3.2500
            FGA25N120ANTDTU-F109
            DISTI # 512-FGA25N120ANTDTUF            		ON SemiconductorIGBT Transistors Copak Discrete
            RoHS: Compliant            		27
            • 1:$3.0600
            • 10:$2.6000
            • 100:$2.2600
            • 250:$2.1400
            • 500:$1.9200
            • 1000:$1.6200
            FGA25N120ANTDTU
            DISTI # 1095025            		ON SemiconductorIGBT, NPT, 1200V, 50A, TO-3PN
            RoHS: Compliant            		1802
            • 1:$8.2100
            • 10:$6.9700
            • 100:$6.0500
            • 250:$5.7400
            FGA25N120ANTDTU
            DISTI # C1S226600570233            		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-3PN Rail
            RoHS: Compliant            		450
            • 250:$3.1589
            • 100:$3.3580
            • 1:$4.1700
            FGA25N120ANTDTU
            DISTI # XSFP00000149659            		Fairchild Semiconductor Corporation 
            RoHS: Compliant            		30
            • 30:$6.7400
            FGA25N120ANTDTU
            DISTI # 1095025            		ON SemiconductorIGBT, NPT, 1200V, 50A, TO-3PN
            RoHS: Compliant            		2169
            • 1:£4.9400
            • 10:£3.7700
            • 100:£3.2800
            • 250:£3.1100
            • 500:£2.7900
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            Disponibilità
            Azione:
            764
            Su ordine:
            2747
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            Il prezzo attuale di FGA25N120ANTDTU è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
            Prezzo di riferimento (USD)
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            Prezzo unitario
            est. Prezzo
            1
            4,02 USD
            4,02 USD
            10
            3,42 USD
            34,20 USD
            100
            2,96 USD
            296,00 USD
            250
            2,81 USD
            702,50 USD
            500
            2,52 USD
            1 260,00 USD
            A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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