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NIMD6001ANR2G

NIMD6001ANR2G
Mfr. #:
NIMD6001ANR2G
Produttore:
ON Semiconductor
Descrizione:
RF Bipolar Transistors MOSFET 60V 3.3A 130 MOHM DUAL
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
NIMD6001ANR2G Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NIMD6001ANR2G DatasheetNIMD6001ANR2G Datasheet (P4-P6)NIMD6001ANR2G Datasheet (P7-P9)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
ON Semiconductor
categoria di prodotto
PMIC - Interruttori di distribuzione dell'alimentazione, driver di carico
Serie
NIMD6001A
Confezione
Nastro e bobina (TR)
Unità di peso
0.019048 oz
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
8-SOIC (0.154", 3.90mm Width)
Tecnologia
si
Tipo di ingresso
-
Temperatura di esercizio
-55°C ~ 150°C (TJ)
Tipo di uscita
Canale N
Caratteristiche
-
Numero di canali
2 Channel
Interfaccia
Acceso spento
Pacchetto-dispositivo-fornitore
8-SOIC
Rapporto ingresso: uscita
1899/12/30 1:01:00
Configurazione
Dual
Numero di uscite
2
Tensione-Alimentazione-Vcc-Vdd
Non richiesto
Protezione dai guasti
-
Configurazione dell'uscita
Lato basso
Rds-On-Typ
60 mOhm
Tensione-Carico
60V (Max)
Corrente-Uscita-Max
3.3A
Tipo di interruttore
Relè, driver solenoide
Tipo a transistor
2 N-Channel
Id-Continuo-Scarico-Corrente
3.3 A
Vds-Drain-Source-Breakdown-Voltage
67 V
Rds-On-Drain-Source-Resistenza
110 mOhms
Polarità del transistor
Canale N
Tags
NIMD6001A, NIMD60, NIMD6, NIMD, NIM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Transistor MOSFET Array Dual N-CH 60V 3.3A 8-Pin SOIC T/R
***emi
Dual N-Channel MOSFET Driver with Diagnostic Output
***enic
IC PWR DRIVER N-CHAN 1:1 8SOIC
***or
BUFFER/INVERTER PERIPHL DRIVER
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IRF7342PBF Dual P-channel MOSFET Transistor; 3.4 A; 55 V; 8-Pin SOIC
***itex
Transistor: 2xP-MOSFET; unipolar; -55V; -3.4A; 0.105ohm; 2W; -55+150 deg.C; SMD; SO8
***et Europe
Transistor MOSFET Array Dual P-CH 55V 3.4A 8-Pin SOIC Tube
***ure Electronics
Dual P-Channel 55 V 0.105 Ohm 26 nC HEXFET® Power Mosfet - SOIC-8
***id Electronics
Transistor MOSFET 2xP-Ch. 3,4A/55V SO8 IRF 7342 TRPBF
***nell
MOSFET, DUAL, PP, LOGIC, SO-8; Transistor Polarity: Dual P Channel; Continuous Drain Current Id: 3.4A; Drain Source Voltage Vds: -55V; On Resistance Rds(on): 0.105ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1V
***roFlash
Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***(Formerly Allied Electronics)
IRF7343PBF Dual N/P-channel MOSFET Transistor; 3.4 A; 4.7 A; 55 V; 8-Pin SOIC
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Dual N/P-Channel 55 V 0.065/0.17 Ohm 36/38 nC HEXFET® Power Mosfet - SOIC-8
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Transistor MOSFET N+P-Ch.4,7+3,4A/55V SO8 IRF 7343 TRPBF
***ineon SCT
55V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***nell
MOSFET, DUAL, NP, LOGIC, SO-8; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 4.7A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.05ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; P
***th Star Micro
Transistor MOSFET P-CH 30V 4.1A 8-Pin SOIC N T/R
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Single P-Channel 30 V 0.042 Ohms Surface Mount Power Mosfet - SOIC-8
***enic
30V 4.1A 1.3W 42m´Î@10V5.7A 3V@250Ã×A P Channel SOIC-8_150mil MOSFETs ROHS
***ment14 APAC
P CH MOSFET; Transistor Polarity:P Chann; P CH MOSFET; Transistor Polarity:P Channel; Continuous Drain Current Id:-5.7A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):70mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1V; Power Dissipation Pd:2.5W
***(Formerly Allied Electronics)
NTMD4N03R2G Dual N-channel MOSFET Transistor; 4 A; 30 V; 8-Pin SOIC
***Yang
Transistor MOSFET Array Dual N-CH 30V 4A 8-Pin SOIC T/R - Tape and Reel
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N-Channel 30 V 48 mOhm 2 W Surface Mount Power MOSFET - SOIC-8
***emi
Power MOSFET 30V 4A 60 mOhm Dual N-Channel S0-8
***nell
MOSFET, DUAL N-CH, 30V, 4A, SOIC; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 4A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.048ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.9V; Power Dissipation Pd: 2W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ure Electronics
ZXMHC3 Series 30 V 33 mOhm 2N/2P-Ch. H-Bridge Enhancement Mode MOSFET - SOIC-8
***ark
MOSFET, COMP, H-BRIDE, 30V, SO8; Channel Type:Complementary N and P Channel; Drain Source Voltage Vds N Channel:30V; Drain Source Voltage Vds P Channel:30V; Continuous Drain Current Id N Channel:3.98A; No. of Pins:8Pins RoHS Compliant: Yes
***el Electronic
Transistors - FETs, MOSFETs - Arrays 1 (Unlimited) Tape & Reel (TR) 8-SOIC (0.154, 3.90mm Width) Surface Mount 2 N and 2 P-Channel (H-Bridge) Logic Level Gate -55°C~150°C TJ 33m Ω @ 5A, 10V 3V @ 250μA MOSFET 2N/2P-CH 30V 8-SOIC
***nell
MOSFET, COMP, H-BRIDE, 30V, SO8; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 3.98A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.033ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 870mW; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Continuous Drain Current Id, N Channel: 5A; Continuous Drain Current Id, P Channel: -4.1A; Drain Source Voltage Vds, N Channel: 30V; Drain Source Voltage Vds, P Channel: -30V; Module Configuration: Half Bridge; On Resistance Rds(on), N Channel: 0.033ohm; On Resistance Rds(on), P Channel: 0.055ohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C
Parte # Mfg. Descrizione Azione Prezzo
NIMD6001ANR2G
DISTI # NIMD6001ANR2G-ND		ON SemiconductorIC MOSFET DVR 60V 3.3A 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    NIMD6001ANR2G
    DISTI # NIMD6001ANR2G    		ON SemiconductorTrans MOSFET N-CH 60V 3.3A 8-Pin SOIC N T/R - Bulk (Alt: NIMD6001ANR2G)
    Min Qty: 447
    Container: Bulk    		Americas - 0
    • 4470:$0.6909
    • 2235:$0.7079
    • 1341:$0.7169
    • 894:$0.7269
    • 447:$0.7319
    NIMD6001ANR2GON SemiconductorBuffer/Inverter Based Peripheral Driver
    RoHS: Compliant    		14
    • 1000:$0.7400
    • 500:$0.7800
    • 100:$0.8100
    • 25:$0.8400
    • 1:$0.9100
    Immagine Parte # Descrizione
    NIMD6001ANR2G

    Mfr.#: NIMD6001ANR2G

    OMO.#: OMO-NIMD6001ANR2G-ON-SEMICONDUCTOR

    		 RF Bipolar Transistors MOSFET 60V 3.3A 130 MOHM DUAL
    NIMD6001A

    Mfr.#: NIMD6001A

    OMO.#: OMO-NIMD6001A-1190

    		 Nuovo e originale
    NIMD6001AR2G

    Mfr.#: NIMD6001AR2G

    OMO.#: OMO-NIMD6001AR2G-1190

    		 Nuovo e originale
    NIMD6001N

    Mfr.#: NIMD6001N

    OMO.#: OMO-NIMD6001N-1190

    		 Nuovo e originale
    NIMD6001NR2G

    Mfr.#: NIMD6001NR2G

    OMO.#: OMO-NIMD6001NR2G-1190

    		 Trans MOSFET N-CH 60V 3.3A 8-Pin SOIC N T/R - Bulk (Alt: NIMD6001NR2G)
    Disponibilità
    Azione:
    Available
    Su ordine:
    2500
    Inserisci la quantità:
    Il prezzo attuale di NIMD6001ANR2G è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
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    Prezzo unitario
    est. Prezzo
    1
    1,04 USD
    1,04 USD
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    0,98 USD
    9,84 USD
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    0,93 USD
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    0,88 USD
    440,45 USD
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    0,83 USD
    829,10 USD
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