IPT60R028G7XTMA1

Mfr. #:: IPT60R028G7XTMA1
Produttore:: Infineon Technologies
Descrizione:: MOSFET HIGH POWER NEW
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: IPT60R028G7XTMA1 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
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ECAD Model:
Maggiori informazioni:: IPT60R028G7XTMA1 maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore:: Infineon

Categoria di prodotto:: MOSFET

RoHS:: Y

Tecnologia:: si

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: HSOF-8

Numero di canali:: 1 Channel

Polarità del transistor:: Canale N

Vds - Tensione di rottura Drain-Source:: 600 V

Id - Corrente di scarico continua:: 75 A

Rds On - Resistenza Drain-Source:: 28 mOhms

Vgs th - Tensione di soglia gate-source:: 3 V

Vgs - Tensione Gate-Source:: 20 V

Qg - Carica cancello:: 123 nC

Temperatura di esercizio minima:: - 55 C

Temperatura massima di esercizio:: + 150 C

Pd - Dissipazione di potenza:: 391 W

Configurazione:: Separare

Modalità canale:: Aumento

Confezione:: Bobina

Serie:: CoolMOS G7

Marca:: Tecnologie Infineon

Tempo di caduta:: 2.8 ns

Tipologia di prodotto:: MOSFET

Ora di alzarsi:: 9 ns

Quantità confezione di fabbrica:: 2000

sottocategoria:: MOSFET

Tempo di ritardo allo spegnimento tipico:: 100 ns

Tempo di ritardo di accensione tipico:: 28 ns

Parte # Alias:: IPT60R028G7 SP001579312

Tags: IPT60R028, IPT60R02, IPT60R0, IPT60, IPT6, IPT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPT60R028G7XTMA1 Descrizione

***et: Trans MOSFET N-CH 600V 75A 9-Pin(8+Tab) HSOF T/R

***ark: Mosfet, N-Ch, 600V, 75A, Hsof; Transistor Polarity:n Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:75A; On Resistance Rds(On):0.024Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes

***ineon: The CoolMOS C7 Gold series (G7) for the first time brings together the benefits of the improved 600V CoolMOS C7 Gold technology, 4pin Kelvin source capability and the improved thermal properties of the TO-Leadless (TOLL) package to enable a possible SMD solution for high current hard switching topologies such as power factor correction (PFC) up to 3kW and for resonant circuits such as high end LLC. | Summary of Features: Gives best-in-class FOM R DS(on)xE oss and R DS(on)xQ G; Enables best-in-class R DS(on) in smallest footprint | Benefits: Higher efficiency due to the improved C7 Gold technology and faster switching due to the package low parasitic source inductance and the 4pin Kelvin source concept; Improved power density due to low R DS(on) in small footprint, by either replacing TO-packages (height restrictions) or paralleling SMD packages due to thermal or R DS(on) requirements; Production cost reduction by moving to SMD through quicker assembly times | Target Applications: Telecom; Server; Solar; Industrial SMPS

IPT60R028G7XTMA1 Maggiori informazioni

CoolMOS™ 7 Superjunction MOSFETs: Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.

CoolMOS™ C7 Gold (G7) Power MOSFETs: Infineon Technologies CoolMOS™ C7 Gold (G7) Power MOSFETs are housed in the new SMD TO-Leadless (TOLL) package using the Kelvin source concept. The G7 MOSFETs combine improved 600V and 650V CoolMOS™ G7 technology, 4-pin Kelvin source capability, and the improved thermal properties of the TO-Leadless package. This enables an SMD solution for high current hard switching topologies like power factor correction (PFC) up to 3kW. For the 600V CoolMOS™ G7, the MOSFETs can be used for resonant circuits like high end LLC.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
IPT60R028G7XTMA1 DISTI # V36:1790_16563203	Infineon Technologies AG	HIGH POWER_NEW	0	2000000:$8.2840 1000000:$8.2870 200000:$8.6810 20000:$9.4300 2000:$9.5580
IPT60R028G7XTMA1 DISTI # V72:2272_16563203	Infineon Technologies AG	HIGH POWER_NEW	0
IPT60R028G7XTMA1 DISTI # IPT60R028G7XTMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 600V 75A HSOF-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1961In Stock	500:$11.1519 100:$12.5363 10:$14.8440 1:$16.1500
IPT60R028G7XTMA1 DISTI # IPT60R028G7XTMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 600V 75A HSOF-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1961In Stock	500:$11.1519 100:$12.5363 10:$14.8440 1:$16.1500
IPT60R028G7XTMA1 DISTI # IPT60R028G7XTMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 600V 75A HSOF-8 RoHS: Compliant Min Qty: 2000 Container: Tape & Reel (TR)	Temporarily Out of Stock	2000:$9.5577
IPT60R028G7XTMA1 DISTI # SP001579312	Infineon Technologies AG	Trans MOSFET N-CH 600V 75A 9-Pin(8+Tab) HSOF T/R (Alt: SP001579312) RoHS: Compliant Min Qty: 2000 Container: Tape and Reel	Europe - 2000	20000:€7.7900 12000:€8.3900 8000:€9.0900 4000:€9.3900 2000:€9.7900
IPT60R028G7XTMA1 DISTI # IPT60R028G7XTMA1	Infineon Technologies AG	Trans MOSFET N-CH 600V 75A 9-Pin(8+Tab) HSOF T/R - Tape and Reel (Alt: IPT60R028G7XTMA1) RoHS: Compliant Min Qty: 2000 Container: Reel	Americas - 0	20000:$8.9900 12000:$9.0900 8000:$9.4900 4000:$9.7900 2000:$10.1900
IPT60R028G7XTMA1/SAMPLE DISTI # IPT60R028G7XTMA1/SAMPLE	Infineon Technologies AG	Trans MOSFET N-CH 600V 75A 9-Pin HSOF T/R - Product that comes on tape, but is not reeled (Alt: IPT60R028G7XTMA1/SAMPLE) RoHS: Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0
IPT60R028G7XTMA1 DISTI # 57AC6816	Infineon Technologies AG	MOSFET, N-CH, 600V, 75A, HSOF,Transistor Polarity:N Channel,Continuous Drain Current Id:75A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.024ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power DissipationRoHS Compliant: Yes	1695	1000:$9.5400 500:$10.4100 250:$11.1300 100:$11.7100 50:$12.4900 25:$13.2800 10:$13.8600 1:$15.0700
IPT60R028G7XTMA1 DISTI # 726-IPT60R028G7XTMA1	Infineon Technologies AG	MOSFET HIGH POWER NEW RoHS: Compliant	789	1:$14.9200 10:$13.7200 25:$13.1500 100:$11.5900 250:$11.0200 500:$10.3100 1000:$9.4500 2000:$8.5400
IPT60R028G7XTMA1 DISTI # 2865309	Infineon Technologies AG	MOSFET, N-CH, 600V, 75A, HSOF RoHS: Compliant	1617	250:$14.2300 100:$14.6700 50:$15.4700 10:$16.3600 5:$18.5000 1:$19.7900
IPT60R028G7XTMA1 DISTI # 2865309	Infineon Technologies AG	MOSFET, N-CH, 600V, 75A, HSOF	1592	100:£9.0200 50:£9.6300 10:£10.2300 5:£11.6100 1:£12.0300

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Disponibilità

Azione:: 890
Su ordine:: 2873
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Il prezzo attuale di IPT60R028G7XTMA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~14,92 USD~~; ~~14,92 USD~~

10: ~~13,72 USD~~; ~~137,20 USD~~

25: ~~13,15 USD~~; ~~328,75 USD~~

100: ~~11,59 USD~~; ~~1 159,00 USD~~

250: ~~11,02 USD~~; ~~2 755,00 USD~~

500: ~~10,31 USD~~; ~~5 155,00 USD~~

1000: ~~9,45 USD~~; ~~9 450,00 USD~~

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IPT60R028G7XTMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes