BSC889N03LSG

Mfr. #:: BSC889N03LSG
Produttore:: Rochester Electronics, LLC
Descrizione:: Power Field-Effect Transistor, 13A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: BSC889N03LSG Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
Pagamento:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Attributo del prodotto
Valore attributo

Produttore: INFINEON

categoria di prodotto: FET - Single

Tags: BSC889N03LSG, BSC889N03L, BSC889, BSC8, BSC

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSC889N03LSG Descrizione

***et: Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP

***i-Key: N-CHANNEL POWER MOSFET

***ure Electronics: Single N-Channel 50 V 3.5 Ohm 300 mW Silicon Surface Mount Mosfet - SOT-23

***ical: Trans MOSFET N-CH 50V 0.2A Automotive 3-Pin SOT-23 T/R

***nell: MOSFET, AEC-Q101, N CH, 50V, 0.2A, 0.3W; Transistor Polarity: N Channel; Continuous Drain Current Id: 200mA; Drain Source Voltage Vds: 50V; On Resistance Rds(on): 1.4ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.2V; Power Dissipation Pd: 300mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***p One Stop Global: Trans MOSFET N-CH 60V 0.2A Automotive 3-Pin SOT-23 T/R

***ark: Mosfet, Aec-Q101, N-Ch, 60V, Sot-23-3 Rohs Compliant: Yes

***nell: MOSFET, AEC-Q101, N-CH, 60V, SOT-23-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 200mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 2.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.4

***et: Trans MOSFET N-CH 60V 0.2A 3-Pin SOT-23 T/R

***ark: Mosfet, N-Ch, 60V, 0.2A, Sot-23-3 Rohs Compliant: Yes

***nell: MOSFET, N-CH, 60V, 0.2A, SOT-23-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 200mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 2.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.4V; P

***ure Electronics: N-Channel 60 V 0.5 W 100 mOhm 10 nC SMT PowerTrench Mosfet - SSOT-3

***emi: N-Channel PowerTrench® MOSFET 60V, 1.7A, 100mΩ

***ment14 APAC: MOSFET, N, SMD, SSOT-3; Transistor Polarity:N Channel; Continuous Drain Current Id:1.7A; Drain Source Voltage Vds:60V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.4V; Power Dissipation Pd:500mW; Transistor Case Style:SuperSOT; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:1.7A; Package / Case:SuperSOT-3; Power Dissipation Pd:500mW; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:2.4V; Voltage Vgs Rds on Measurement:10V

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features very low RDS(ON) in a small SOT23 footprint. Fairchild’s PowerTrench technology provides faster switching than other MOSFETs with comparable RDS(ON) specifications. The result is higher overall efficiency with less board space.

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 1.7 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 83 / Gate-Source Voltage V = 20 / Fall Time ns = 5 / Rise Time ns = 6 / Turn-OFF Delay Time ns = 15 / Turn-ON Delay Time ns = 10 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 500

***ure Electronics: SQ2362ES Series 60 V 0.068 Ohm 4.3 A SMT Automotive N-Channel Mosfet - SOT-23

***enic: 60V 4.3A 95m´Î@10V4.5A 3W 2.5V@250Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS

***ow.cn: Trans MOSFET N-CH 60V 4.3A Automotive 3-Pin SOT-23 T/R

***ment14 APAC: MOSFET, AUTO, N-CH, 60V, 2.3A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:2.3A; Source Voltage Vds:60V; On Resistance

***nsix Microsemi: Power Field-Effect Transistor, 4.3A I(D), 60V, 0.068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

***ark: MOSFET, AEC-Q101, N-CH, 60V, 2.3A, SOT-23; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:4.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes

***nell: MOSFET, AUTO, N-CH, 60V, 2.3A, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.3A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.125ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 3.3W; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: TrenchFET Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 3 - 168 hours; SVHC: No SVHC (17-Dec-2015)

***ure Electronics: Single P-Channel 60 V 1 W 6 nC Silicon Surface Mount Mosfet - SOT-23

***emi: P-Channel Power MOSFET, -60V, -1.8A, 250mΩ

***ark: Transistor Polarity:p Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.8A; On Resistance Rds(On):0.19Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.6V Rohs Compliant: Yes

*** Stop Electro: Small Signal Field-Effect Transistor, 1.8A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
BSC889N03LSGATMA1 DISTI # BSC889N03LSGATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 30V 45A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	Limited Supply - Call
BSC889N03LSGATMA1 DISTI # BSC889N03LSGATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 30V 45A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
BSC889N03LSGATMA1 DISTI # BSC889N03LSGATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 30V 45A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
BSC889N03LS G DISTI # 726-BSC889N03LSG	Infineon Technologies AG	MOSFET N-Ch 30V 13A TDSON-8 RoHS: Compliant	0
BSC889N03LSG	Infineon Technologies AG	Power Field-Effect Transistor, 13A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	329990	1000:$0.2600 500:$0.2800 100:$0.2900 25:$0.3000 1:$0.3200
BSC889N03LSGATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 13A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	30000	1000:$0.2800 500:$0.2900 100:$0.3000 25:$0.3200 1:$0.3400

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: BSC889N03LS OMO.#: OMO-BSC889N03LS-1190	Nuovo e originale
	Mfr.#: BSC889N03LS G OMO.#: OMO-BSC889N03LS-G-1190	MOSFET N-Ch 30V 13A TDSON-8
	Mfr.#: BSC889N03LSG OMO.#: OMO-BSC889N03LSG-1190	Power Field-Effect Transistor, 13A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
	Mfr.#: BSC889N03LSG E8178 OMO.#: OMO-BSC889N03LSG-E8178-1190	Nuovo e originale
	Mfr.#: BSC889N03LSGATMA1 OMO.#: OMO-BSC889N03LSGATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 45A TDSON-8
	Mfr.#: BSC889N03LSGE8178 OMO.#: OMO-BSC889N03LSGE8178-1190	Nuovo e originale
	Mfr.#: BSC889N03MS OMO.#: OMO-BSC889N03MS-1190	Nuovo e originale
	Mfr.#: BSC889N03MS G OMO.#: OMO-BSC889N03MS-G-1190	MOSFET N-Ch 30V 12A TDSON-8
	Mfr.#: BSC889N03MSG OMO.#: OMO-BSC889N03MSG-1190	Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
	Mfr.#: BSC889N03MSGATMA1 OMO.#: OMO-BSC889N03MSGATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 44A TDSON-8

Disponibilità

Azione:: Available
Su ordine:: 4000
Inserisci la quantità:

Il prezzo attuale di BSC889N03LSG è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,39 USD~~; ~~0,39 USD~~

10: ~~0,37 USD~~; ~~3,70 USD~~

100: ~~0,35 USD~~; ~~35,10 USD~~

500: ~~0,33 USD~~; ~~165,75 USD~~

1000: ~~0,31 USD~~; ~~312,00 USD~~

Iniziare con

Prodotti più recenti

IO-Link™ Devices

Maxim Integrated’s complete portfolio of IO-link devices integrate value-adding features to provide design flexibility and offload the local processor.
Large Diameter Clear Hole Spacers

RAF's large diameter clear hole spacers for industrial applications are available in standard stock sizes, various materials and finishes, and custom options.
WE-ExB Series Common Mode Power Line Choke

Wurth's WE-ExB series is the double core made of MnZn and NiZn. Its insertion loss has a range of effect over a broader frequency range than does a single NiZn or MnZn core.
CPI2-B1-REU Production Device Programmer

Phyton's CPI2-B1-REU in-system programmer supports Renesas microcontrollers, memory devices, and MCUs from other manufacturers.
CFSH05-20L Schottky Diode

Central Semiconductor's space saving, low profile Schottky diode for applications including DC-DC conversion and circuit protection.

More Newest Products

BSC889N03LSG

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes