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IS46LR32160C-6BLA1

IS46LR32160C-6BLA1
Mfr. #:
IS46LR32160C-6BLA1
Produttore:
ISSI
Descrizione:
DRAM 512M, 1.8V, 166Mhz Mobile DDR SDRAM
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IS46LR32160C-6BLA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IS46LR32160C-6BLA1 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
ISSI
Categoria di prodotto:
DRAM
RoHS:
Y
Tipo:
SDRAM - DDR1
Larghezza bus dati:
32 bit
Organizzazione:
16 M x 32
Pacchetto/custodia:
BGA-90
Dimensione della memoria:
512 Mbit
Frequenza massima di clock:
166 MHz
Orario di accesso:
6 ns
Tensione di alimentazione - Max:
1.95 V
Tensione di alimentazione - Min:
1.7 V
Corrente di alimentazione - Max:
130 mA
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 85 C
Serie:
IS46LR32160C
Confezione:
Vassoio
Marca:
ISSI
Stile di montaggio:
SMD/SMT
Sensibile all'umidità:
sì
Tensione di alimentazione operativa:
1.8 V
Tipologia di prodotto:
DRAM
Quantità confezione di fabbrica:
240
sottocategoria:
Memoria e archiviazione dati
Nome depositato:
Risparmio energetico
Tags
IS46LR32160C, IS46LR321, IS46LR3, IS46LR, IS46L, IS46, IS4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    A***a
    A***a
    CL

    Good.

    2019-06-16
    A***i
    A***i
    RU

    Horror, horror, horror, horror! Not only was the power source sent not the one that i ordered, sent photos confirming that came not the one that i ordered, not the same configuration, not with the same parameters, found in the store the one that was sent to me, and also, in addition, he was defective, The protection worked at 0.6a, instead of the declared 3a, so i was closed and the money was not returned. The seller really promised to send another one, but we will see live, a fresh tradition, but i can hardly believe it! Well, if you send and if you come, i will definitely write off.

    2019-04-20
    E**y
    E**y
    CZ

    OK

    2019-05-14
    D***n
    D***n
    DE

    All ok. Quality is normal

    2019-05-08
***ark
Automotive (-40 to +85C), 512M, 1.8V, Mobile DDR, 16Mx32, 90 ball BGA (8mmx13mm) RoHS
***ical
DRAM Chip Mobile-DDR SDRAM 512Mbit 16Mx32 1.8V Automotive 90-Pin TFBGA
***et
DRAM Chip Mobile DDR SDRAM 512M-Bit 16M x 32 1.8V 90-Pin TFBGA
***i-Key
IC DRAM 512M PARALLEL 90TFBGA
IS43LR16800F 2Mx16 Mobile DDR SDRAM
ISSI IS43LR16800F 2Mx16 Mobile DDR SDRAM is 134,217,728 bits Mobile Double Data Rate (DDR) Synchronous DRAM (SDRAM) organized as 4 banks of 2,097,152 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted on a 16-bit bus. The double data rate architecture is essentially a 2N prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. This product offers fully synchronous operations referenced to both rising and falling edges of the clock.
Mobile DDR SDRAM
ISSI Mobile DDR SDRAM is organized as 4 banks of 16,777,216 words x 16 bits and uses a double-data-rate architecture to achieve high-speed operation. The Data Input/Output signals are transmitted on a 16-bit bus. The double data rate architecture is essentially a 2N prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. ISSI Mobile DDR SDRAM offers fully synchronous operations referenced to both rising and falling edges of the clock. The data paths are internally pipelined and 2n-bits prefetched to achieve very high bandwidth. All input and output voltage levels are compatible with LVCMOS.
Parte # Mfg. Descrizione Azione Prezzo
IS46LR32160C-6BLA1
DISTI # IS46LR32160C-6BLA1		Integrated Silicon Solution IncDRAM Chip Mobile DDR SDRAM 512M-Bit 16M x 32 1.8V 90-Pin TFBGA - Bulk (Alt: IS46LR32160C-6BLA1)
RoHS: Compliant
Min Qty: 240
Container: Bulk		Americas - 0
  • 240:$11.1900
  • 480:$10.6900
  • 960:$10.2900
  • 1440:$9.9900
  • 2400:$9.5900
IS46LR32160C-6BLA1-TR
DISTI # IS46LR32160C-6BLA1-TR		Integrated Silicon Solution IncDRAM Chip Mobile DDR SDRAM 512M-Bit 16M x 32 1.8V 90-Pin TFBGA T/R - Tape and Reel (Alt: IS46LR32160C-6BLA1-TR)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$11.2900
  • 5000:$10.7900
  • 10000:$10.3900
  • 15000:$9.9900
  • 25000:$9.6900
IS46LR32160C-6BLA1
DISTI # 870-I46LR32160C6BLA1		Integrated Silicon Solution IncDRAM 512M, 1.8V, 166Mhz Mobile DDR SDRAM
RoHS: Compliant		0
  • 240:$11.3600
  • 480:$10.8700
  • 720:$10.8000
IS46LR32160C-6BLA1-TR
DISTI # 870-46LR32160C6BLA1R		Integrated Silicon Solution IncDRAM 512M, 1.8V, 166Mhz Mobile DDR
RoHS: Compliant		0
  • 2500:$9.7200
Immagine Parte # Descrizione
IS46LR32160C-6BLA2-TR

Mfr.#: IS46LR32160C-6BLA2-TR

OMO.#: OMO-IS46LR32160C-6BLA2-TR

 DRAM 512M, 1.8V, 166Mhz Mobile DDR
IS46LR32160C-6BLA1

Mfr.#: IS46LR32160C-6BLA1

OMO.#: OMO-IS46LR32160C-6BLA1

 DRAM 512M, 1.8V, 166Mhz Mobile DDR SDRAM
IS46LR32160B-6BLA1-TR

Mfr.#: IS46LR32160B-6BLA1-TR

OMO.#: OMO-IS46LR32160B-6BLA1-TR

 DRAM 512M (16Mx32) Mobile DDR 1.8v
IS46LR32160B-6BLA1

Mfr.#: IS46LR32160B-6BLA1

OMO.#: OMO-IS46LR32160B-6BLA1

 DRAM 512M (16Mx32) 1.8v Mobile DDR SDRAM
IS46LR32160C-6BLA2-TR

Mfr.#: IS46LR32160C-6BLA2-TR

OMO.#: OMO-IS46LR32160C-6BLA2-TR-INTEGRATED-SILICON-SOLUTION

 DRAM 512M, 1.8V, 166Mhz Mobile DDR
IS46LR32160C-6BLA1-TR

Mfr.#: IS46LR32160C-6BLA1-TR

OMO.#: OMO-IS46LR32160C-6BLA1-TR-INTEGRATED-SILICON-SOLUTION

 DRAM 512M, 1.8V, 166Mhz Mobile DDR
IS46LR32160B-6BLA2

Mfr.#: IS46LR32160B-6BLA2

OMO.#: OMO-IS46LR32160B-6BLA2-INTEGRATED-SILICON-SOLUTION

 DRAM 512M (16Mx32) 1.8v Mobile DDR SDRAM
IS46LR32160C-6BLA2

Mfr.#: IS46LR32160C-6BLA2

OMO.#: OMO-IS46LR32160C-6BLA2-INTEGRATED-SILICON-SOLUTION

 DRAM 512M, 1.8V, 166Mhz Mobile DDR SDRAM
IS46LR32160B-6BLA1

Mfr.#: IS46LR32160B-6BLA1

OMO.#: OMO-IS46LR32160B-6BLA1-INTEGRATED-SILICON-SOLUTION

 DRAM 512M (16Mx32) 1.8v Mobile DDR SDRAM
IS46LR32160C-6BLA1

Mfr.#: IS46LR32160C-6BLA1

OMO.#: OMO-IS46LR32160C-6BLA1-INTEGRATED-SILICON-SOLUTION

 DRAM 512M, 1.8V, 166Mhz Mobile DDR SDRAM
Disponibilità
Azione:
Available
Su ordine:
2000
Inserisci la quantità:
Il prezzo attuale di IS46LR32160C-6BLA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
240
11,36 USD
2 726,40 USD
480
10,87 USD
5 217,60 USD
720
10,80 USD
7 776,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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