BSC011N03LSIXT

BSC011N03LSIXT
Mfr. #:
BSC011N03LSIXT
Produttore:
Infineon Technologies
Descrizione:
IGBT Transistors MOSFET N-Ch 30V 100A TSDSON-8 OptiMOS
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
BSC011N03LSIXT Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
Tecnologie Infineon
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Serie
OptiMOS
Confezione
Bobina
Alias ​​parziali
BSC011N03LSIATMA1 SP000884574
Stile di montaggio
SMD/SMT
Nome depositato
OptiMOS
Pacchetto-Custodia
TSDSON-8
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Singola Quad Scarico Tripla Sorgente
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
96 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
6.2 ns
Ora di alzarsi
8.8 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
100 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Rds-On-Drain-Source-Resistenza
1.1 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
37 ns
Qg-Gate-Carica
72 nC
Tags
BSC011N03LSI, BSC011N03LS, BSC011N, BSC011, BSC01, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descrizione Azione Prezzo
BSC011N03LSIATMA1
DISTI # BSC011N03LSIATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 30V 37A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
11333In Stock
  • 1000:$1.0572
  • 500:$1.2526
  • 100:$1.5783
  • 10:$1.9370
  • 1:$2.1300
BSC011N03LSIATMA1
DISTI # BSC011N03LSIATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 30V 37A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
11333In Stock
  • 1000:$1.0572
  • 500:$1.2526
  • 100:$1.5783
  • 10:$1.9370
  • 1:$2.1300
BSC011N03LSIATMA1
DISTI # BSC011N03LSIATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 30V 37A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
5000In Stock
  • 5000:$0.9315
BSC011N03LSIATMA1
DISTI # BSC011N03LSIATMA1
Infineon Technologies AGTrans MOSFET N-CH 30V 37A 8-Pin TDSON EP - Tape and Reel (Alt: BSC011N03LSIATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 5000
  • 5000:$0.6619
  • 10000:$0.6379
  • 20000:$0.6149
  • 30000:$0.5949
  • 50000:$0.5839
BSC011N03LSIATMA1
DISTI # 50Y1793
Infineon Technologies AGMOSFET, N-CH, 30V, 100A, 150DEG C, 96W,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:30V,On Resistance Rds(on):900µohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes0
  • 1000:$0.9170
  • 500:$1.1100
  • 250:$1.1900
  • 100:$1.2700
  • 50:$1.3800
  • 25:$1.4700
  • 10:$1.5800
  • 1:$1.8700
BSC011N03LSI
DISTI # 726-BSC011N03LSI
Infineon Technologies AGMOSFET N-Ch 30V 100A TSDSON-8 OptiMOS
RoHS: Compliant
0
  • 1:$1.7000
  • 10:$1.4400
  • 100:$1.1500
  • 500:$1.0100
  • 1000:$0.8340
BSC011N03LSIXT
DISTI # 726-BSC011N03LSIATMA
Infineon Technologies AGMOSFET N-Ch 30V 100A TSDSON-8 OptiMOS
RoHS: Compliant
0
  • 5000:$0.7480
BSC011N03LSIATMA1
DISTI # 2480705
Infineon Technologies AGMOSFET, N-CH, 30V, 100A, TDSON-8
RoHS: Compliant
3030
  • 500:£0.7860
  • 250:£0.8180
  • 100:£0.8490
  • 25:£0.9900
  • 5:£1.1300
BSC011N03LSIATMA1
DISTI # 2480705
Infineon Technologies AGMOSFET, N-CH, 30V, 100A, TDSON-8
RoHS: Compliant
2950
  • 100:$1.8200
  • 10:$2.2800
  • 1:$2.6900
BSC011N03LSIATMA1
DISTI # 2480705RL
Infineon Technologies AGMOSFET, N-CH, 30V, 100A, TDSON-8
RoHS: Compliant
0
  • 100:$1.8200
  • 10:$2.2800
  • 1:$2.6900
Immagine Parte # Descrizione
BSC011N03LSTATMA1

Mfr.#: BSC011N03LSTATMA1

OMO.#: OMO-BSC011N03LSTATMA1

MOSFET DIFFERENTIATED MOSFETS
BSC011N03LSATMA1

Mfr.#: BSC011N03LSATMA1

OMO.#: OMO-BSC011N03LSATMA1

MOSFET N-Ch 30V 100A TDSON-8 OptiMOS
BSC011N03LSIXT

Mfr.#: BSC011N03LSIXT

OMO.#: OMO-BSC011N03LSIXT

MOSFET N-Ch 30V 100A TSDSON-8 OptiMOS
BSC011N03LSIATMA1

Mfr.#: BSC011N03LSIATMA1

OMO.#: OMO-BSC011N03LSIATMA1

MOSFET LV POWER MOS
BSC011N03L

Mfr.#: BSC011N03L

OMO.#: OMO-BSC011N03L-1190

Nuovo e originale
BSC011N03LS

Mfr.#: BSC011N03LS

OMO.#: OMO-BSC011N03LS-1190

Trans MOSFET N-CH 30V 37A 8-Pin TDSON EP
BSC011N03LSG

Mfr.#: BSC011N03LSG

OMO.#: OMO-BSC011N03LSG-1190

Nuovo e originale
BSC011N03LSI

Mfr.#: BSC011N03LSI

OMO.#: OMO-BSC011N03LSI-1190

MOSFET N-Ch 30V 100A TSDSON-8 OptiMOS
BSC011N03LSIATMA1

Mfr.#: BSC011N03LSIATMA1

OMO.#: OMO-BSC011N03LSIATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 30V 37A TDSON-8
BSC011N03LSIXT

Mfr.#: BSC011N03LSIXT

OMO.#: OMO-BSC011N03LSIXT-126

IGBT Transistors MOSFET N-Ch 30V 100A TSDSON-8 OptiMOS
Disponibilità
Azione:
Available
Su ordine:
1500
Inserisci la quantità:
Il prezzo attuale di BSC011N03LSIXT è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
1,08 USD
1,08 USD
10
1,02 USD
10,25 USD
100
0,97 USD
97,07 USD
500
0,92 USD
458,35 USD
1000
0,86 USD
862,80 USD
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