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SIA906EDJ-T1-GE3

SIA906EDJ-T1-GE3
Mfr. #:
SIA906EDJ-T1-GE3
Produttore:
Vishay
Descrizione:
IGBT Transistors MOSFET 20V 4.5A 7.8W 46mohm @ 4.5V
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SIA906EDJ-T1-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
SIA906EDJ-T1-GE3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
Vishay Siliconix
categoria di prodotto
FET - Array
Serie
TrinceaFETR
Confezione
Imballaggio alternativo Digi-ReelR
Alias ​​parziali
SIA906EDJ-GE3
Unità di peso
0.000988 oz
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
PowerPAKR SC-70-6 Dual
Tecnologia
si
Temperatura di esercizio
-55°C ~ 150°C (TJ)
Tipo di montaggio
Montaggio superficiale
Numero di canali
2 Channel
Pacchetto-dispositivo-fornitore
PowerPAKR SC-70-6 Dual
Configurazione
Dual
Tipo FET
2 N-Channel (Dual)
Potenza-Max
7.8W
Tipo a transistor
2 N-Channel
Drain-to-Source-Voltage-Vdss
20V
Ingresso-Capacità-Ciss-Vds
350pF @ 10V
Funzione FET
Porta livello logico
Corrente-Continuo-Scarico-Id-25°C
4.5A
Rds-On-Max-Id-Vgs
46 mOhm @ 3.9A, 4.5V
Vgs-th-Max-Id
1.4V @ 250μA
Gate-Carica-Qg-Vgs
12nC @ 10V
Pd-Power-Dissipazione
1.9 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
12 ns
Ora di alzarsi
12 ns
Vgs-Gate-Source-Voltage
12 V
Id-Continuo-Scarico-Corrente
4.5 A
Vds-Drain-Source-Breakdown-Voltage
20 V
Rds-On-Drain-Source-Resistenza
46 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
18 ns 15 ns
Tempo di ritardo all'accensione tipico
10 ns 5 ns
Modalità canale
Aumento
Tags
SIA906EDJ-T, SIA906, SIA90, SIA9, SIA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SIA906EDJ-T1-GE3 N-channel MOSFET Transistor; 4.5 A; 20 V; 6-Pin SC-70
***Components
In a Pack of 20, N-Channel MOSFET, 4.5 A, 20 V, 6-Pin SOT-363 (SC-70) Vishay SIA906EDJ-T1-GE3
***ure Electronics
Dual N Channel 20 V 0.046 O 3.5 nC Power Mosfet - PowerPAK SC-70-6L Dual
***ark
Dual N-Channel 20-V (D-S) Mosfet Rohs Compliant: No
***et
Trans MOSFET N-CH 20V 4.5A 6-Pin PowerPAK SC-70 T/R
***et Europe
Trans MOSFET Array Dual N-CH 20V 4.5A 6-Pin SC-70
***C
MOSFET 20V 4.5A 7.8W 46mohm @ 4.5V
***i-Key
MOSFET 2N-CH 20V 4.5A SC70-6
***
DUAL N-CHANNEL 20-V (D-S) MOSF
***ment14 APAC
Prices include import duty and tax. MOSFET, DUAL N-CH, 20V, POWERPAK SC70; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.037ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.4V; Power Dissipation Pd:7.8W; Transistor Case Style:PowerPAK SC70; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)
***nell
MOSFET, DOPPIO CA-N 20V, 66A, SC70; Polarità Transistor:Canale N Doppio; Corrente Continua di Drain Id:4.5A; Tensione Drain Source Vds:20V; Resistenza di Attivazione Rds(on):0.037ohm; Tensione Vgs di Misura Rds(on):4.5V; Tensione di Soglia Vgs:1.4V; Dissipazione di Potenza Pd:7.8W; Modello Case Transistor:PowerPAK SC70; No. di Pin:6Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2018)
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
Vishay Siliconix SiA906EDJ Dual N-Channel MOSFET
Vishay Siliconix SiA906EDJ Dual N-Channel MOSFET is designed to save space and increase power efficiency in portable electronics. It features the industry's lowest on-resistance for 20V (12V VGS) devices at 4.5V gate drives in the 2x2mm footprint area. The SiA906EDJ is optimized for load switches for portable applications and high frequency DC/DC converters.Learn More
Parte # Mfg. Descrizione Azione Prezzo
SIA906EDJ-T1-GE3
DISTI # V72:2272_09216851		Vishay IntertechnologiesTrans MOSFET N-CH 20V 4.5A 6-Pin PowerPAK SC-70 T/R
RoHS: Compliant		2513
  • 1000:$0.1827
  • 500:$0.2509
  • 250:$0.2943
  • 100:$0.2975
  • 25:$0.3735
  • 10:$0.3780
  • 1:$0.4588
SIA906EDJ-T1-GE3
DISTI # SIA906EDJ-T1-GE3TR-ND		Vishay SiliconixMOSFET 2N-CH 20V 4.5A SC70-6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.2302
SIA906EDJ-T1-GE3
DISTI # SIA906EDJ-T1-GE3CT-ND		Vishay SiliconixMOSFET 2N-CH 20V 4.5A SC70-6
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.2600
  • 500:$0.3365
  • 100:$0.4589
  • 10:$0.6120
  • 1:$0.7300
SIA906EDJ-T1-GE3
DISTI # SIA906EDJ-T1-GE3DKR-ND		Vishay SiliconixMOSFET 2N-CH 20V 4.5A SC70-6
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.2600
  • 500:$0.3365
  • 100:$0.4589
  • 10:$0.6120
  • 1:$0.7300
SIA906EDJ-T1-GE3
DISTI # 31003583		Vishay IntertechnologiesTrans MOSFET N-CH 20V 4.5A 6-Pin PowerPAK SC-70 T/R
RoHS: Compliant		2513
  • 1000:$0.1827
  • 500:$0.2509
  • 250:$0.2943
  • 100:$0.2975
  • 38:$0.3735
SIA906EDJ-T1-GE3
DISTI # SIA906EDJ-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 20V 4.5A 6-Pin PowerPAK SC-70 T/R (Alt: SIA906EDJ-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    SIA906EDJ-T1-GE3
    DISTI # SIA906EDJ-T1-GE3    		Vishay IntertechnologiesTrans MOSFET Array Dual N-CH 20V 4.5A 6-Pin SC-70 (Alt: SIA906EDJ-T1-GE3)
    RoHS: Compliant
    Min Qty: 1    		Europe - 0
    • 1:€0.4059
    • 10:€0.2769
    • 25:€0.2379
    • 50:€0.2199
    • 100:€0.2119
    • 500:€0.2079
    • 1000:€0.2049
    SIA906EDJ-T1-GE3
    DISTI # SIA906EDJ-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 20V 4.5A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA906EDJ-T1-GE3)
    RoHS: Not Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 3000:$0.1859
    • 6000:$0.1809
    • 12000:$0.1729
    • 18000:$0.1689
    • 30000:$0.1639
    SIA906EDJ-T1-GE3
    DISTI # 15R4841    		Vishay IntertechnologiesMOSFET, DUAL N CHANNEL, 20V, 4.5A, POWERPAK-6, FULL REEL,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:4.5A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.037ohm,Rds(on) Test Voltage Vgs:4.5V , RoHS Compliant: Yes0
    • 1:$0.2000
    • 3000:$0.1990
    • 6000:$0.1890
    • 12000:$0.1680
    SIA906EDJ-T1-GE3
    DISTI # 09X6410    		Vishay IntertechnologiesMOSFET, DUAL N CHANNEL, 20V, 4.5A, POWERPAK-6,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:4.5A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.037ohm,Rds(on) Test Voltage Vgs:4.5V,No. of Pins:6Pins , RoHS Compliant: Yes0
    • 1:$0.3910
    • 10:$0.3780
    • 100:$0.2990
    • 250:$0.2840
    • 500:$0.2650
    • 1000:$0.2120
    SIA906EDJ-T1-GE3
    DISTI # 70459578    		Vishay SiliconixSIA906EDJ-T1-GE3 N-channel MOSFET Transistor,4.5 A,20 V,6-Pin SC-70
    RoHS: Compliant    		0
    • 3000:$0.2600
    • 6000:$0.2520
    • 12000:$0.2440
    SIA906EDJ-T1-GE3Vishay IntertechnologiesDual N Channel 20 V 0.046 O 3.5 nC Power Mosfet - PowerPAK SC-70-6L Dual
    RoHS: Compliant    		15000Reel
    • 3000:$0.2600
    SIA906EDJ-T1-GE3
    DISTI # 781-SIA906EDJ-GE3    		Vishay IntertechnologiesMOSFET 20V Vds 12V Vgs PowerPAK SC-70
    RoHS: Compliant    		0
    • 1:$0.6400
    • 10:$0.4880
    • 100:$0.3620
    • 500:$0.2980
    • 1000:$0.2300
    • 3000:$0.2100
    • 6000:$0.1960
    SIA906EDJ-T1-GE3.Vishay IntertechnologiesMOSFET 20V 4.5A 7.8W 46mohm @ 4.5V
    RoHS: Compliant    		Americas - 2975
    • 25:$0.3220
    SIA906EDJ-T1-GE3Vishay IntertechnologiesMOSFET 20V Vds 12V Vgs PowerPAK SC-70
    RoHS: Compliant    		Americas - 3000
      SIA906EDJ-T1-GE3
      DISTI # 2889714      		Vishay IntertechnologiesMOSFET, DUAL N-CH, 20V, POWERPAK SC70
      RoHS: Compliant      		0
      • 5:$0.8630
      • 25:$0.7140
      • 100:$0.5600
      • 250:$0.4600
      • 500:$0.3910
      • 1000:$0.3700
      • 5000:$0.3570
      SIA906EDJ-T1-GE3
      DISTI # 2889714      		Vishay IntertechnologiesMOSFET, DUAL N-CH, 20V, POWERPAK SC70
      RoHS: Compliant      		0
      • 5:£0.3780
      • 25:£0.3260
      • 100:£0.2740
      • 250:£0.2720
      • 500:£0.2230
      SIA906EDJ-T1-GE3
      DISTI # C1S803601446282      		Vishay IntertechnologiesMOSFETs
      RoHS: Compliant      		2763
      • 250:$0.2939
      • 100:$0.2970
      • 25:$0.3725
      • 10:$0.3768
      SIA906EDJ-T1-GE3
      DISTI # XSFP00000063545      		Vishay Siliconix 
      RoHS: Compliant      		14133
      • 3000:$0.5200
      • 14133:$0.4727
      Immagine Parte # Descrizione
      SIA906EDJ-T1-GE3

      Mfr.#: SIA906EDJ-T1-GE3

      OMO.#: OMO-SIA906EDJ-T1-GE3

      		 MOSFET 20V Vds 12V Vgs PowerPAK SC-70
      SIA906EDJ-T1-GE3

      Mfr.#: SIA906EDJ-T1-GE3

      OMO.#: OMO-SIA906EDJ-T1-GE3-VISHAY

      		 IGBT Transistors MOSFET 20V 4.5A 7.8W 46mohm @ 4.5V
      SIA906EDJ

      Mfr.#: SIA906EDJ

      OMO.#: OMO-SIA906EDJ-1190

      		 Nuovo e originale
      SIA906EDJ-T1-E3

      Mfr.#: SIA906EDJ-T1-E3

      OMO.#: OMO-SIA906EDJ-T1-E3-1190

      		 Nuovo e originale
      SIA906EDJ-T4-GE3

      Mfr.#: SIA906EDJ-T4-GE3

      OMO.#: OMO-SIA906EDJ-T4-GE3-1190

      		 Nuovo e originale
      Disponibilità
      Azione:
      Available
      Su ordine:
      4000
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      Il prezzo attuale di SIA906EDJ-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
      Prezzo di riferimento (USD)
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      est. Prezzo
      1
      0,23 USD
      0,23 USD
      10
      0,22 USD
      2,22 USD
      100
      0,21 USD
      21,05 USD
      500
      0,20 USD
      99,40 USD
      1000
      0,19 USD
      187,10 USD
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