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RGTH60TS65DGC11

RGTH60TS65DGC11
Mfr. #:
RGTH60TS65DGC11
Produttore:
ROHM Semiconductor
Descrizione:
IGBT Transistors 650V 30A IGBT Stop Trench
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
RGTH60TS65DGC11 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
RGTH60TS65DGC11 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Semiconduttore ROHM
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Tensione collettore-emettitore VCEO Max:
650 V
Tensione di saturazione collettore-emettitore:
1.6 V
Tensione massima dell'emettitore di gate:
30 V
Corrente continua del collettore a 25 C:
58 A
Pd - Dissipazione di potenza:
194 W
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 175 C
Serie:
RGTH60TS65
Confezione:
Tubo
Corrente continua del collettore Ic Max:
58 A
Intervallo operativo di temperatura:
- 40 C to + 175 C
Marca:
Semiconduttore ROHM
Corrente continua del collettore:
30 A
Corrente di dispersione gate-emettitore:
+/- 200 nA
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
450
sottocategoria:
IGBT
Parte # Alias:
RGTH60TS65D
Unità di peso:
0.070548 oz
Tags
RGTH60TS, RGTH6, RGTH, RGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 58A 194000mW 3-Pin(3+Tab) TO-247N Bulk
***nell
IGBT, SINGLE, 650V, 58A, TO-247N-3
***ark
Igbt, Single, 650V, 58A, To-247N-3; Dc Collector Current:58A; Collector Emitter Saturation Voltage Vce(On):1.6V; Power Dissipation Pd:194W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247N; No. Of Pins:3Pins; Rohs Compliant: Yes
Field Stop Trench IGBTs
ROHM Field Stop Trench IGBTs are energy saving high-efficiency IGBTs used in a wide range of high-voltage and high-current applications. These IGBTs feature a low collector and emitter saturation voltage, short-circuit withstand time, and built-in very fast & soft recovery FRD. The field stop trench IGBTs are ideal for UPS, power conditioner, welder, and general inverters for industrial use.
Parte # Mfg. Descrizione Azione Prezzo
RGTH60TS65DG-C11
DISTI # C1S625901599659		ROHM SemiconductorIGBT Chip60
  • 50:$9.4000
  • 25:$10.5000
  • 10:$11.0000
  • 5:$11.5000
RGTH60TS65DGC11
DISTI # RGTH60TS65DGC11-ND		ROHM SemiconductorIGBT 650V 58A 194W TO-247N
RoHS: Compliant
Min Qty: 1
Container: Tube		64In Stock
  • 2500:$1.5750
  • 1000:$1.6538
  • 500:$1.9609
  • 250:$2.1853
  • 100:$2.4216
  • 25:$2.6580
  • 10:$2.9530
  • 1:$3.3100
RGTH60TS65DGC11
DISTI # RGTH60TS65DGC11		ROHM SemiconductorTrans IGBT Chip N-CH 650V 58A 3-Pin TO-247N Tube - Rail/Tube (Alt: RGTH60TS65DGC11)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 450:$1.6900
  • 900:$1.5900
  • 1800:$1.4900
  • 2700:$1.3900
  • 4500:$1.3900
RGTH60TS65DGC11
DISTI # 76Y4977		ROHM SemiconductorIGBT, SINGLE, 650V, 58A, TO-247N-3,DC Collector Current:58A,Collector Emitter Saturation Voltage Vce(on):1.6V,Power Dissipation Pd:194W,Collector Emitter Voltage V(br)ceo:650V,Transistor Case Style:TO-247N,No. of Pins:3Pins,RoHS Compliant: Yes33
  • 1:$2.9800
  • 10:$2.5400
  • 25:$2.4300
  • 50:$2.3100
  • 100:$2.2000
  • 250:$2.0900
  • 500:$1.8700
RGTH60TS65DGC11
DISTI # 755-RGTH60TS65DGC11		ROHM SemiconductorIGBT Transistors 650V 30A IGBT Stop Trench
RoHS: Compliant		265
  • 1:$2.9800
  • 10:$2.5400
  • 100:$2.2000
  • 250:$2.0900
  • 500:$1.8700
  • 1000:$1.5800
  • 2500:$1.5000
  • 5000:$1.4400
RGTH60TS65DGC11
DISTI # 1501458		ROHM SemiconductorIGBT N-CHANNEL 58A 650V TRENCH TO-247, PK20
  • 5:£2.3100
  • 25:£2.0320
  • 100:£1.7780
  • 250:£1.6640
  • 500:£1.5700
RGTH60TS65DGC11ROHM SemiconductorIGBT Transistors 650V 30A IGBT Stop Trench
RoHS: Compliant		Americas -
    RGTH60TS65DGC11
    DISTI # 2519796    		ROHM SemiconductorIGBT, SINGLE, 650V, 58A, TO-247N-3
    RoHS: Compliant    		33
    • 1:£2.6400
    • 10:£1.8000
    • 100:£1.5600
    • 250:£1.4800
    • 500:£1.3300
    RGTH60TS65DGC11ROHM SemiconductorRoHS(ship within 1day)30
    • 1:$3.7100
    • 10:$3.0500
    • 50:$2.4500
    • 100:$2.0900
    • 500:$1.9900
    • 1000:$1.9500
    RGTH60TS65DGC11
    DISTI # 2519796    		ROHM SemiconductorIGBT, SINGLE, 650V, 58A, TO-247N-3
    RoHS: Compliant    		33
    • 1:$4.7200
    • 10:$4.0300
    • 100:$3.4900
    • 250:$3.3800
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    OMO.#: OMO-SM8S17AHE3-A-I

    		 TVS Diodes / ESD Suppressors 8W,17V 5%,SMD PAR AEC-Q101 Qualified
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    RFN30TS6DGC11

    Mfr.#: RFN30TS6DGC11

    OMO.#: OMO-RFN30TS6DGC11-ROHM-SEMI

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    OMO.#: OMO-OPA548T-TEXAS-INSTRUMENTS

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    OMO.#: OMO-SM8S17AHE3-A-I-VISHAY

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    Disponibilità
    Azione:
    230
    Su ordine:
    2213
    Inserisci la quantità:
    Il prezzo attuale di RGTH60TS65DGC11 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    2,98 USD
    2,98 USD
    10
    2,54 USD
    25,40 USD
    100
    2,20 USD
    220,00 USD
    250
    2,09 USD
    522,50 USD
    500
    1,87 USD
    935,00 USD
    1000
    1,58 USD
    1 580,00 USD
    2500
    1,50 USD
    3 750,00 USD
    5000
    1,44 USD
    7 200,00 USD
    A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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