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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| SIRA10DP-T1-GE3 DISTI # V72:2272_09216072 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 25A 8-Pin PowerPAK SO EP RoHS: Compliant | 415 |
|
| SIRA10DP-T1-GE3 DISTI # V36:1790_09216072 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 25A 8-Pin PowerPAK SO EP RoHS: Compliant | 0 |
|
| SIRA10DP-T1-GE3 DISTI # V99:2348_09216072 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 25A 8-Pin PowerPAK SO EP RoHS: Compliant | 0 |
|
| SIRA10DP-T1-GE3 DISTI # SIRA10DP-T1-GE3CT-ND | Vishay Siliconix | MOSFET N-CH 30V 60A PPAK SO-8 Min Qty: 1 Container: Cut Tape (CT) | 4488In Stock |
|
| SIRA10DP-T1-GE3 DISTI # SIRA10DP-T1-GE3DKR-ND | Vishay Siliconix | MOSFET N-CH 30V 60A PPAK SO-8 Min Qty: 1 Container: Digi-Reel® | 4488In Stock |
|
| SIRA10DP-T1-GE3 DISTI # SIRA10DP-T1-GE3TR-ND | Vishay Siliconix | MOSFET N-CH 30V 60A PPAK SO-8 Min Qty: 3000 Container: Tape & Reel (TR) | 3000In Stock |
|
| SIRA10DP-T1-GE3 DISTI # 32642950 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 25A 8-Pin PowerPAK SO EP RoHS: Compliant | 415 |
|
| SIRA10DP-T1-GE3 DISTI # SIRA10DP-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 25A 8-Pin PowerPAK SO T/R (Alt: SIRA10DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel | Asia - 15000 |
|
| SIRA10DP-T1-GE3 DISTI # SIRA10DP-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 25A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIRA10DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel | Americas - 0 |
|
| SIRA10DP-T1-GE3 DISTI # 68W7084 | Vishay Intertechnologies | MOSFET, N CH, 30V, 30A, POWERPAK SO-8, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0028ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.1VRoHS Compliant: Yes RoHS: Compliant | 0 |
|
| SIRA10DP-T1-GE3 DISTI # 68W7083 | Vishay Intertechnologies | MOSFET, N CHANNEL, 30V, 30A, POWERPAK SO-8,Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0028ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.1V RoHS Compliant: Yes RoHS: Compliant | 0 |
|
| SIRA10DP-T1-GE3 DISTI # 70243886 | Vishay Siliconix | Semiconcuctor,Mosfet,TrenchFET,N-Channel,30V,30A,3.7mohm @ 10V,PowerPAK SO-8 RoHS: Not Compliant | 0 |
|
| SIRA10DP-T1-GE3 DISTI # 78-SIRA10DP-T1-GE3 | Vishay Intertechnologies | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant | 2969 |
|
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: SIRA10DP-T1-GE3 OMO.#: OMO-SIRA10DP-T1-GE3 |
MOSFET 30V Vds 20V Vgs PowerPAK SO-8 |
|
|
Mfr.#: SIRA10DP-T1-GE3. OMO.#: OMO-SIRA10DP-T1-GE3- |
MOSFET 30V 3.7mOhm@10V 30A N-Ch G-IV |
|
Mfr.#: SIRA10DP OMO.#: OMO-SIRA10DP-1190 |
Nuovo e originale |
|
|
Mfr.#: SIRA10DP-T1-E3 OMO.#: OMO-SIRA10DP-T1-E3-1190 |
Nuovo e originale |
|
Mfr.#: SIRA10DP-T1-GE3 OMO.#: OMO-SIRA10DP-T1-GE3-VISHAY |
MOSFET N-CH 30V 60A PPAK SO-8 |