VP2106N3-G

VP2106N3-G Overview

Product belongs to the - series. Bulk is the packaging method for this product Weight of 0.016000 oz Through Hole Mounting-Style TO-226-3, TO-92-3 (TO-226AA) Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: TO-92-3 Configuration Single This product uses an MOSFET P-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 P-Channel 60V This product has an 60pF @ 25V value of 300pF @ 25V. This product's Standard. 250mA (Tj) continuous drain-ID current at 25°C; This product has an 12 Ohm @ 500mA, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 740 mW Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 5 ns of 16 ns. This product has a 5 ns of 16 ns. This product's 20 V. The ID of continuous drain current is - 250 mA. This product has a Vds-Drain-Source-Breakdown-Voltageof - 60 V. The 12 Ohms for this product is 12 Ohms. The transistor polarity is P-Channel. 'Typical-Turn-Off-Delay-Time' of 5 ns This product has a 4 ns. This product operates in Enhancement channel mode for optimal performance.

VP2106N3-G Image

VP2106N3-G Specifications

• Manufacturer Microchip Technology
• Product Category FETs - Single
• Series -
• Packaging Bulk
• Unit-Weight 0.016000 oz
• Mounting-Style Through Hole
• Package-Case TO-226-3, TO-92-3 (TO-226AA)
• Technology Si
• Operating-Temperature -55°C ~ 150°C (TJ)
• Mounting-Type Through Hole
• Number-of-Channels 1 Channel
• Supplier-Device-Package TO-92-3
• Configuration Single
• FET-Type MOSFET P-Channel, Metal Oxide
• Power-Max 1W
• Transistor-Type 1 P-Channel
• Drain-to-Source-Voltage-Vdss 60V
• Input-Capacitance-Ciss-Vds 60pF @ 25V
• FET-Feature Standard
• Current-Continuous-Drain-Id-25°C 250mA (Tj)
• Rds-On-Max-Id-Vgs 12 Ohm @ 500mA, 10V
• Vgs-th-Max-Id 3.5V @ 1mA
• Gate-Charge-Qg-Vgs -
• Pd-Power-Dissipation 740 mW
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 5 ns
• Rise-Time 5 ns
• Vgs-Gate-Source-Voltage 20 V
• Id-Continuous-Drain-Current - 250 mA
• Vds-Drain-Source-Breakdown-Voltage - 60 V
• Rds-On-Drain-Source-Resistance 12 Ohms
• Transistor-Polarity P-Channel
• Typical-Turn-Off-Delay-Time 5 ns
• Typical-Turn-On-Delay-Time 4 ns
• Channel-Mode Enhancement

VP2106N3-G FAQ

• A: What is the Series of the product?

  Q: The Series of the product is -.

• A: Is the cutoff frequency of the product Packaging?

  Q: Yes, the product's Packaging is indeed Bulk

• A: What is the Unit-Weight of the product?

  Q: The Unit-Weight of the product is 0.016000 oz.

• A: At what frequency does the Mounting-Style?

  Q: The product Mounting-Style is Through Hole.

• A: At what frequency does the Package-Case?

  Q: The product Package-Case is TO-226-3, TO-92-3 (TO-226AA).

• A: What is the Technology of the product?

  Q: The Technology of the product is Si.

• A: Is the cutoff frequency of the product Operating-Temperature?

  Q: Yes, the product's Operating-Temperature is indeed -55°C ~ 150°C (TJ)

• A: Is the cutoff frequency of the product Mounting-Type?

  Q: Yes, the product's Mounting-Type is indeed Through Hole

• A: At what frequency does the Number-of-Channels?

  Q: The product Number-of-Channels is 1 Channel.

• A: Is the cutoff frequency of the product Supplier-Device-Package?

  Q: Yes, the product's Supplier-Device-Package is indeed TO-92-3

• A: What is the Configuration of the product?

  Q: The Configuration of the product is Single.

• A: Is the cutoff frequency of the product FET-Type?

  Q: Yes, the product's FET-Type is indeed MOSFET P-Channel, Metal Oxide

• A: What is the Transistor-Type of the product?

  Q: The Transistor-Type of the product is 1 P-Channel.

• A: What is the Drain-to-Source-Voltage-Vdss of the product?

  Q: The Drain-to-Source-Voltage-Vdss of the product is 60V.

• A: At what frequency does the Input-Capacitance-Ciss-Vds?

  Q: The product Input-Capacitance-Ciss-Vds is 60pF @ 25V.

• A: Is the cutoff frequency of the product FET-Feature?

  Q: Yes, the product's FET-Feature is indeed Standard

• A: What is the Current-Continuous-Drain-Id-25°C of the product?

  Q: The Current-Continuous-Drain-Id-25°C of the product is 250mA (Tj).

• A: What is the Rds-On-Max-Id-Vgs of the product?

  Q: The Rds-On-Max-Id-Vgs of the product is 12 Ohm @ 500mA, 10V.

• A: Is the cutoff frequency of the product Pd-Power-Dissipation?

  Q: Yes, the product's Pd-Power-Dissipation is indeed 740 mW

• A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

  Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

• A: What is the Minimum-Operating-Temperature of the product?

  Q: The Minimum-Operating-Temperature of the product is - 55 C.

• A: Is the cutoff frequency of the product Fall-Time?

  Q: Yes, the product's Fall-Time is indeed 5 ns

• A: At what frequency does the Rise-Time?

  Q: The product Rise-Time is 5 ns.

• A: What is the Vgs-Gate-Source-Voltage of the product?

  Q: The Vgs-Gate-Source-Voltage of the product is 20 V.

• A: At what frequency does the Id-Continuous-Drain-Current?

  Q: The product Id-Continuous-Drain-Current is - 250 mA.

• A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

  Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed - 60 V

• A: At what frequency does the Rds-On-Drain-Source-Resistance?

  Q: The product Rds-On-Drain-Source-Resistance is 12 Ohms.

• A: What is the Transistor-Polarity of the product?

  Q: The Transistor-Polarity of the product is P-Channel.

• A: What is the Typical-Turn-Off-Delay-Time of the product?

  Q: The Typical-Turn-Off-Delay-Time of the product is 5 ns.

• A: What is the Typical-Turn-On-Delay-Time of the product?

  Q: The Typical-Turn-On-Delay-Time of the product is 4 ns.

• A: At what frequency does the Channel-Mode?

  Q: The product Channel-Mode is Enhancement.