| Mfr. #: | VP0109N3-G |
|---|---|
| Produttore: | Microchip Technology |
| Descrizione: | IGBT Transistors MOSFET 90V 8Ohm |
| Ciclo vitale: | Nuovo da questo produttore. |
| Scheda dati: | VP0109N3-G Scheda dati |


Bulk is the packaging method for this product Weight of 0.016000 oz Through Hole Mounting-Style TO-92-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 P-Channel Power-off control: 1 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 4 ns of 16 ns. This product has a 3 ns of 16 ns. This product's 20 V. The ID of continuous drain current is - 250 mA. This product has a Vds-Drain-Source-Breakdown-Voltageof - 90 V. The 8 Ohms for this product is 12 Ohms. The transistor polarity is P-Channel. 'Typical-Turn-Off-Delay-Time' of 8 ns This product has a 4 ns. This product operates in Enhancement channel mode for optimal performance.

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

VP0109N3-G Specifications
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Bulk
A: What is the Unit-Weight of the product?
Q: The Unit-Weight of the product is 0.016000 oz.
A: At what frequency does the Mounting-Style?
Q: The product Mounting-Style is Through Hole.
A: At what frequency does the Package-Case?
Q: The product Package-Case is TO-92-3.
A: Is the cutoff frequency of the product Technology?
Q: Yes, the product's Technology is indeed Si
A: At what frequency does the Number-of-Channels?
Q: The product Number-of-Channels is 1 Channel.
A: Is the cutoff frequency of the product Configuration?
Q: Yes, the product's Configuration is indeed Single
A: What is the Transistor-Type of the product?
Q: The Transistor-Type of the product is 1 P-Channel.
A: Is the cutoff frequency of the product Pd-Power-Dissipation?
Q: Yes, the product's Pd-Power-Dissipation is indeed 1 W
A: Is the cutoff frequency of the product Maximum-Operating-Temperature?
Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C
A: At what frequency does the Minimum-Operating-Temperature?
Q: The product Minimum-Operating-Temperature is - 55 C.
A: What is the Fall-Time of the product?
Q: The Fall-Time of the product is 4 ns.
A: At what frequency does the Rise-Time?
Q: The product Rise-Time is 3 ns.
A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?
Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 20 V
A: What is the Id-Continuous-Drain-Current of the product?
Q: The Id-Continuous-Drain-Current of the product is - 250 mA.
A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?
Q: The Vds-Drain-Source-Breakdown-Voltage of the product is - 90 V.
A: At what frequency does the Rds-On-Drain-Source-Resistance?
Q: The product Rds-On-Drain-Source-Resistance is 8 Ohms.
A: What is the Transistor-Polarity of the product?
Q: The Transistor-Polarity of the product is P-Channel.
A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?
Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 8 ns
A: What is the Typical-Turn-On-Delay-Time of the product?
Q: The Typical-Turn-On-Delay-Time of the product is 4 ns.
A: What is the Channel-Mode of the product?
Q: The Channel-Mode of the product is Enhancement.