TPS1100DR

Mfr. #: TPS1100DR
Produttore: Texas Instruments
Descrizione: RF Bipolar Transistors MOSFET Single P-Ch Enh-Mode MOSFET
Ciclo vitale: Nuovo da questo produttore.
Scheda dati: TPS1100DR Scheda dati
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
TPS1100DR Overview

Product belongs to the TPS1100 series. Reel is the packaging method for this product Weight of 0.002677 oz SMD/SMT Mounting-Style SOIC-8 Si is the technology used. Number of channels: 1 Channel Configuration Single Quad Drain Triple Source Transistor type: 1 P-Channel Power-off control: 791 mW Maximum operating temperature of + 125 C Minimum operating temperature: - 40 C This product has a 10 ns of 16 ns. This product has a 10 ns of 16 ns. This product's - 15 V 2 V. The ID of continuous drain current is 1.6 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 15 V. The 400 mOhms at 4.5 V for this product is 12 Ohms. The transistor polarity is P-Channel. 'Typical-Turn-Off-Delay-Time' of 13 ns This product has a 4.5 ns. This product operates in Enhancement channel mode for optimal performance.

TPS1100DR Image

TPS1100DR

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TPS1100DR Specifications
  • Manufacturer TI
  • Product Category FETs - Single
  • Series TPS1100
  • Packaging Reel
  • Unit-Weight 0.002677 oz
  • Mounting-Style SMD/SMT
  • Package-Case SOIC-8
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single Quad Drain Triple Source
  • Transistor-Type 1 P-Channel
  • Pd-Power-Dissipation 791 mW
  • Maximum-Operating-Temperature + 125 C
  • Minimum-Operating-Temperature - 40 C
  • Fall-Time 10 ns
  • Rise-Time 10 ns
  • Vgs-Gate-Source-Voltage - 15 V 2 V
  • Id-Continuous-Drain-Current 1.6 A
  • Vds-Drain-Source-Breakdown-Voltage 15 V
  • Rds-On-Drain-Source-Resistance 400 mOhms at 4.5 V
  • Transistor-Polarity P-Channel
  • Typical-Turn-Off-Delay-Time 13 ns
  • Typical-Turn-On-Delay-Time 4.5 ns
  • Channel-Mode Enhancement

TPS1100DR

TPS1100DR Specifications

TPS1100DR FAQ
  • A: At what frequency does the Series?

    Q: The product Series is TPS1100.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Reel.

  • A: At what frequency does the Unit-Weight?

    Q: The product Unit-Weight is 0.002677 oz.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed SMD/SMT

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is SOIC-8.

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: What is the Number-of-Channels of the product?

    Q: The Number-of-Channels of the product is 1 Channel.

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single Quad Drain Triple Source.

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed 1 P-Channel

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 791 mW

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 125 C

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 40 C.

  • A: What is the Fall-Time of the product?

    Q: The Fall-Time of the product is 10 ns.

  • A: At what frequency does the Rise-Time?

    Q: The product Rise-Time is 10 ns.

  • A: At what frequency does the Vgs-Gate-Source-Voltage?

    Q: The product Vgs-Gate-Source-Voltage is - 15 V 2 V.

  • A: At what frequency does the Id-Continuous-Drain-Current?

    Q: The product Id-Continuous-Drain-Current is 1.6 A.

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 15 V

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 400 mOhms at 4.5 V

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed P-Channel

  • A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

    Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 13 ns

  • A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

    Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 4.5 ns

  • A: What is the Channel-Mode of the product?

    Q: The Channel-Mode of the product is Enhancement.

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