TN2106K1-G

TN2106K1-G Overview

Product belongs to the - series. Digi-ReelR Alternate Packaging is the packaging method for this product Weight of 0.050717 oz SMD/SMT Mounting-Style TO-236-3, SC-59, SOT-23-3 Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 1 Channel Supplier device package: TO-236AB (SOT23) Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 60V This product has an 50pF @ 25V value of 300pF @ 25V. This product's Logic Level Gate. 280mA (Tj) continuous drain-ID current at 25°C; This product has an 2.5 Ohm @ 500mA, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 360 mW Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 5 ns of 16 ns. This product has a 5 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 280 mA. This product has a Vds-Drain-Source-Breakdown-Voltageof 60 V. The 2.5 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 6 ns This product has a 3 ns. This product operates in Enhancement channel mode for optimal performance.

TN2106K1-G Image

TN2106K1-G Specifications

• Manufacturer Microchip Technology
• Product Category FETs - Single
• Series -
• Packaging Digi-ReelR Alternate Packaging
• Unit-Weight 0.050717 oz
• Mounting-Style SMD/SMT
• Package-Case TO-236-3, SC-59, SOT-23-3
• Technology Si
• Operating-Temperature -55°C ~ 150°C (TJ)
• Mounting-Type Surface Mount
• Number-of-Channels 1 Channel
• Supplier-Device-Package TO-236AB (SOT23)
• Configuration Single
• FET-Type MOSFET N-Channel, Metal Oxide
• Power-Max 360mW
• Transistor-Type 1 N-Channel
• Drain-to-Source-Voltage-Vdss 60V
• Input-Capacitance-Ciss-Vds 50pF @ 25V
• FET-Feature Logic Level Gate
• Current-Continuous-Drain-Id-25°C 280mA (Tj)
• Rds-On-Max-Id-Vgs 2.5 Ohm @ 500mA, 10V
• Vgs-th-Max-Id 2V @ 1mA
• Gate-Charge-Qg-Vgs -
• Pd-Power-Dissipation 360 mW
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 5 ns
• Rise-Time 5 ns
• Vgs-Gate-Source-Voltage 20 V
• Id-Continuous-Drain-Current 280 mA
• Vds-Drain-Source-Breakdown-Voltage 60 V
• Rds-On-Drain-Source-Resistance 2.5 Ohms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 6 ns
• Typical-Turn-On-Delay-Time 3 ns
• Channel-Mode Enhancement

TN2106K1-G FAQ

• A: Is the cutoff frequency of the product Series?

  Q: Yes, the product's Series is indeed -

• A: What is the Packaging of the product?

  Q: The Packaging of the product is Digi-ReelR Alternate Packaging.

• A: At what frequency does the Unit-Weight?

  Q: The product Unit-Weight is 0.050717 oz.

• A: Is the cutoff frequency of the product Mounting-Style?

  Q: Yes, the product's Mounting-Style is indeed SMD/SMT

• A: At what frequency does the Package-Case?

  Q: The product Package-Case is TO-236-3, SC-59, SOT-23-3.

• A: Is the cutoff frequency of the product Technology?

  Q: Yes, the product's Technology is indeed Si

• A: Is the cutoff frequency of the product Operating-Temperature?

  Q: Yes, the product's Operating-Temperature is indeed -55°C ~ 150°C (TJ)

• A: Is the cutoff frequency of the product Mounting-Type?

  Q: Yes, the product's Mounting-Type is indeed Surface Mount

• A: Is the cutoff frequency of the product Number-of-Channels?

  Q: Yes, the product's Number-of-Channels is indeed 1 Channel

• A: What is the Supplier-Device-Package of the product?

  Q: The Supplier-Device-Package of the product is TO-236AB (SOT23).

• A: At what frequency does the Configuration?

  Q: The product Configuration is Single.

• A: What is the FET-Type of the product?

  Q: The FET-Type of the product is MOSFET N-Channel, Metal Oxide.

• A: At what frequency does the Transistor-Type?

  Q: The product Transistor-Type is 1 N-Channel.

• A: What is the Drain-to-Source-Voltage-Vdss of the product?

  Q: The Drain-to-Source-Voltage-Vdss of the product is 60V.

• A: At what frequency does the Input-Capacitance-Ciss-Vds?

  Q: The product Input-Capacitance-Ciss-Vds is 50pF @ 25V.

• A: What is the FET-Feature of the product?

  Q: The FET-Feature of the product is Logic Level Gate.

• A: At what frequency does the Current-Continuous-Drain-Id-25°C?

  Q: The product Current-Continuous-Drain-Id-25°C is 280mA (Tj).

• A: Is the cutoff frequency of the product Rds-On-Max-Id-Vgs?

  Q: Yes, the product's Rds-On-Max-Id-Vgs is indeed 2.5 Ohm @ 500mA, 10V

• A: What is the Pd-Power-Dissipation of the product?

  Q: The Pd-Power-Dissipation of the product is 360 mW.

• A: At what frequency does the Maximum-Operating-Temperature?

  Q: The product Maximum-Operating-Temperature is + 150 C.

• A: What is the Minimum-Operating-Temperature of the product?

  Q: The Minimum-Operating-Temperature of the product is - 55 C.

• A: Is the cutoff frequency of the product Fall-Time?

  Q: Yes, the product's Fall-Time is indeed 5 ns

• A: What is the Rise-Time of the product?

  Q: The Rise-Time of the product is 5 ns.

• A: At what frequency does the Vgs-Gate-Source-Voltage?

  Q: The product Vgs-Gate-Source-Voltage is 20 V.

• A: At what frequency does the Id-Continuous-Drain-Current?

  Q: The product Id-Continuous-Drain-Current is 280 mA.

• A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

  Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 60 V

• A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

  Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 2.5 Ohms

• A: What is the Transistor-Polarity of the product?

  Q: The Transistor-Polarity of the product is N-Channel.

• A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

  Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 6 ns

• A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

  Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 3 ns

• A: What is the Channel-Mode of the product?

  Q: The Channel-Mode of the product is Enhancement.