| Mfr. #: | TN0110N3-G-P002 |
|---|---|
| Produttore: | Microchip Technology |
| Descrizione: | RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET |
| Ciclo vitale: | Nuovo da questo produttore. |
| Scheda dati: | TN0110N3-G-P002 Scheda dati |


Reel is the packaging method for this product Weight of 0.016000 oz Through Hole Mounting-Style TO-92-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 1 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 3 ns of 16 ns. This product has a 3 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 350 mA. This product has a Vds-Drain-Source-Breakdown-Voltageof 100 V. The 4.5 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 6 ns This product has a 2 ns. This product operates in Enhancement channel mode for optimal performance.

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TN0110N3-G-P002 Specifications
A: What is the Packaging of the product?
Q: The Packaging of the product is Reel.
A: At what frequency does the Unit-Weight?
Q: The product Unit-Weight is 0.016000 oz.
A: At what frequency does the Mounting-Style?
Q: The product Mounting-Style is Through Hole.
A: What is the Package-Case of the product?
Q: The Package-Case of the product is TO-92-3.
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: At what frequency does the Number-of-Channels?
Q: The product Number-of-Channels is 1 Channel.
A: Is the cutoff frequency of the product Configuration?
Q: Yes, the product's Configuration is indeed Single
A: Is the cutoff frequency of the product Transistor-Type?
Q: Yes, the product's Transistor-Type is indeed 1 N-Channel
A: What is the Pd-Power-Dissipation of the product?
Q: The Pd-Power-Dissipation of the product is 1 W.
A: What is the Maximum-Operating-Temperature of the product?
Q: The Maximum-Operating-Temperature of the product is + 150 C.
A: Is the cutoff frequency of the product Minimum-Operating-Temperature?
Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C
A: What is the Fall-Time of the product?
Q: The Fall-Time of the product is 3 ns.
A: Is the cutoff frequency of the product Rise-Time?
Q: Yes, the product's Rise-Time is indeed 3 ns
A: What is the Vgs-Gate-Source-Voltage of the product?
Q: The Vgs-Gate-Source-Voltage of the product is 20 V.
A: What is the Id-Continuous-Drain-Current of the product?
Q: The Id-Continuous-Drain-Current of the product is 350 mA.
A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?
Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 100 V
A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?
Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 4.5 Ohms
A: What is the Transistor-Polarity of the product?
Q: The Transistor-Polarity of the product is N-Channel.
A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?
Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 6 ns
A: At what frequency does the Typical-Turn-On-Delay-Time?
Q: The product Typical-Turn-On-Delay-Time is 2 ns.
A: Is the cutoff frequency of the product Channel-Mode?
Q: Yes, the product's Channel-Mode is indeed Enhancement