TIP31A

TIP31A Overview

Product belongs to the 500V Transistors series. Bulk is the packaging method for this product Weight of 0.042823 oz Through Hole Mounting-Style TO-220-3 Through Hole mounting type Supplier device package: TO-220-3 Configuration Single Transistor type: NPN Maximum current collector Ic is 3A . Maximum collector-emitter breakdown voltage of 60V DC current gain minimum (hFE) of Ic/Vce at 10 @ 3A, 4V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 1.2V @ 375mA, 3A Power-off control: 40 W Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C Rated VCEO up to 60 V The transistor polarity is NPN. Saturation voltage between collector and emitter is 1.2 V The 60 V voltage rating is 40 V. 5 V rating of 5 V Max DC collector current: 3 A Gain-Bandwidth-Product: 3 MHz This product is capable of handling a 3 A continuous collector current. Minimum hfe for DC collector-base gain is 10. 50 of 605.

TIP31A Image

TIP31A Specifications

• Manufacturer Fairchild Semiconductor
• Product Category Transistors (BJT) - Single
• Series 500V Transistors
• Packaging Bulk
• Unit-Weight 0.042823 oz
• Mounting-Style Through Hole
• Package-Case TO-220-3
• Mounting-Type Through Hole
• Supplier-Device-Package TO-220-3
• Configuration Single
• Power-Max 2W
• Transistor-Type NPN
• Current-Collector-Ic-Max 3A
• Voltage-Collector-Emitter-Breakdown-Max 60V
• DC-Current-Gain-hFE-Min-Ic-Vce 10 @ 3A, 4V
• Vce-Saturation-Max-Ib-Ic 1.2V @ 375mA, 3A
• Current-Collector-Cutoff-Max 300μA
• Frequency-Transition 3MHz
• Pd-Power-Dissipation 40 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 65 C
• Collector-Emitter-Voltage-VCEO-Max 60 V
• Transistor-Polarity NPN
• Collector-Emitter-Saturation-Voltage 1.2 V
• Collector-Base-Voltage-VCBO 60 V
• Emitter-Base-Voltage-VEBO 5 V
• Maximum-DC-Collector-Current 3 A
• Gain-Bandwidth-Product-fT 3 MHz
• Continuous-Collector-Current 3 A
• DC-Collector-Base-Gain-hfe-Min 10
• DC-Current-Gain-hFE-Max 50

TIP31A FAQ

• A: Is the cutoff frequency of the product Series?

  Q: Yes, the product's Series is indeed 500V Transistors

• A: What is the Packaging of the product?

  Q: The Packaging of the product is Bulk.

• A: Is the cutoff frequency of the product Unit-Weight?

  Q: Yes, the product's Unit-Weight is indeed 0.042823 oz

• A: What is the Mounting-Style of the product?

  Q: The Mounting-Style of the product is Through Hole.

• A: Is the cutoff frequency of the product Package-Case?

  Q: Yes, the product's Package-Case is indeed TO-220-3

• A: At what frequency does the Mounting-Type?

  Q: The product Mounting-Type is Through Hole.

• A: At what frequency does the Supplier-Device-Package?

  Q: The product Supplier-Device-Package is TO-220-3.

• A: What is the Configuration of the product?

  Q: The Configuration of the product is Single.

• A: Is the cutoff frequency of the product Transistor-Type?

  Q: Yes, the product's Transistor-Type is indeed NPN

• A: What is the Current-Collector-Ic-Max of the product?

  Q: The Current-Collector-Ic-Max of the product is 3A.

• A: Is the cutoff frequency of the product Voltage-Collector-Emitter-Breakdown-Max?

  Q: Yes, the product's Voltage-Collector-Emitter-Breakdown-Max is indeed 60V

• A: Is the cutoff frequency of the product DC-Current-Gain-hFE-Min-Ic-Vce?

  Q: Yes, the product's DC-Current-Gain-hFE-Min-Ic-Vce is indeed 10 @ 3A, 4V

• A: What is the Vce-Saturation-Max-Ib-Ic of the product?

  Q: The Vce-Saturation-Max-Ib-Ic of the product is 1.2V @ 375mA, 3A.

• A: What is the Pd-Power-Dissipation of the product?

  Q: The Pd-Power-Dissipation of the product is 40 W.

• A: At what frequency does the Maximum-Operating-Temperature?

  Q: The product Maximum-Operating-Temperature is + 150 C.

• A: What is the Minimum-Operating-Temperature of the product?

  Q: The Minimum-Operating-Temperature of the product is - 65 C.

• A: Is the cutoff frequency of the product Collector-Emitter-Voltage-VCEO-Max?

  Q: Yes, the product's Collector-Emitter-Voltage-VCEO-Max is indeed 60 V

• A: What is the Transistor-Polarity of the product?

  Q: The Transistor-Polarity of the product is NPN.

• A: What is the Collector-Emitter-Saturation-Voltage of the product?

  Q: The Collector-Emitter-Saturation-Voltage of the product is 1.2 V.

• A: What is the Collector-Base-Voltage-VCBO of the product?

  Q: The Collector-Base-Voltage-VCBO of the product is 60 V.

• A: At what frequency does the Emitter-Base-Voltage-VEBO?

  Q: The product Emitter-Base-Voltage-VEBO is 5 V.

• A: What is the Maximum-DC-Collector-Current of the product?

  Q: The Maximum-DC-Collector-Current of the product is 3 A.

• A: What is the Gain-Bandwidth-Product-fT of the product?

  Q: The Gain-Bandwidth-Product-fT of the product is 3 MHz.

• A: What is the Continuous-Collector-Current of the product?

  Q: The Continuous-Collector-Current of the product is 3 A.

• A: Is the cutoff frequency of the product DC-Collector-Base-Gain-hfe-Min?

  Q: Yes, the product's DC-Collector-Base-Gain-hfe-Min is indeed 10

• A: What is the DC-Current-Gain-hFE-Max of the product?

  Q: The DC-Current-Gain-hFE-Max of the product is 50.