| Mfr. #: | STY139N65M5 |
|---|---|
| Produttore: | STMicroelectronics |
| Descrizione: | MOSFET N-CH 650V 130A MAX247 |
| Ciclo vitale: | Nuovo da questo produttore. |
| Scheda dati: | STY139N65M5 Scheda dati |
Product belongs to the MDmesh V series. Tube is the packaging method for this product Weight of 1.340411 oz Through Hole Mounting-Style TO-247-3 Si is the technology used. Operational temperature range: 150°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: MAX247 Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 650V This product has an 15600pF @ 100V value of 300pF @ 25V. This product's Standard. 130A (Tc) continuous drain-ID current at 25°C; This product has an 17 mOhm @ 65A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 625 mW This product's 25 V. The ID of continuous drain current is 130 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 650 V. The 14 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 363 nC.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STY139N65M5 Specifications
A: At what frequency does the Series?
Q: The product Series is MDmesh V.
A: What is the Packaging of the product?
Q: The Packaging of the product is Tube.
A: At what frequency does the Unit-Weight?
Q: The product Unit-Weight is 1.340411 oz.
A: Is the cutoff frequency of the product Mounting-Style?
Q: Yes, the product's Mounting-Style is indeed Through Hole
A: Is the cutoff frequency of the product Package-Case?
Q: Yes, the product's Package-Case is indeed TO-247-3
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: What is the Operating-Temperature of the product?
Q: The Operating-Temperature of the product is 150°C (TJ).
A: What is the Mounting-Type of the product?
Q: The Mounting-Type of the product is Through Hole.
A: What is the Number-of-Channels of the product?
Q: The Number-of-Channels of the product is 1 Channel.
A: Is the cutoff frequency of the product Supplier-Device-Package?
Q: Yes, the product's Supplier-Device-Package is indeed MAX247
A: What is the Configuration of the product?
Q: The Configuration of the product is Single.
A: Is the cutoff frequency of the product FET-Type?
Q: Yes, the product's FET-Type is indeed MOSFET N-Channel, Metal Oxide
A: What is the Transistor-Type of the product?
Q: The Transistor-Type of the product is 1 N-Channel.
A: What is the Drain-to-Source-Voltage-Vdss of the product?
Q: The Drain-to-Source-Voltage-Vdss of the product is 650V.
A: At what frequency does the Input-Capacitance-Ciss-Vds?
Q: The product Input-Capacitance-Ciss-Vds is 15600pF @ 100V.
A: Is the cutoff frequency of the product FET-Feature?
Q: Yes, the product's FET-Feature is indeed Standard
A: What is the Current-Continuous-Drain-Id-25°C of the product?
Q: The Current-Continuous-Drain-Id-25°C of the product is 130A (Tc).
A: Is the cutoff frequency of the product Rds-On-Max-Id-Vgs?
Q: Yes, the product's Rds-On-Max-Id-Vgs is indeed 17 mOhm @ 65A, 10V
A: What is the Pd-Power-Dissipation of the product?
Q: The Pd-Power-Dissipation of the product is 625 mW.
A: What is the Vgs-Gate-Source-Voltage of the product?
Q: The Vgs-Gate-Source-Voltage of the product is 25 V.
A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?
Q: Yes, the product's Id-Continuous-Drain-Current is indeed 130 A
A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?
Q: The product Vds-Drain-Source-Breakdown-Voltage is 650 V.
A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?
Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 14 mOhms
A: Is the cutoff frequency of the product Transistor-Polarity?
Q: Yes, the product's Transistor-Polarity is indeed N-Channel
A: Is the cutoff frequency of the product Qg-Gate-Charge?
Q: Yes, the product's Qg-Gate-Charge is indeed 363 nC