STW45N65M5

STW45N65M5 Overview

Product belongs to the MDmesh V series. Tube is the packaging method for this product Weight of 1.340411 oz Through Hole Mounting-Style TO-247-3 Si is the technology used. Operational temperature range: 150°C (TJ) Through Hole mounting type Supplier device package: TO-247 This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. 650V This product has an 3375pF @ 100V value of 300pF @ 25V. This product's Standard. 35A (Tc) continuous drain-ID current at 25°C; This product has an 78 mOhm @ 19.5A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 208 W The ID of continuous drain current is 35 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 650 V. The 78 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel.

STW45N65M5 Image

STW45N65M5 Specifications

• Manufacturer STMicroelectronics
• Product Category FETs - Single
• Series MDmesh V
• Packaging Tube
• Unit-Weight 1.340411 oz
• Mounting-Style Through Hole
• Package-Case TO-247-3
• Technology Si
• Operating-Temperature 150°C (TJ)
• Mounting-Type Through Hole
• Supplier-Device-Package TO-247
• FET-Type MOSFET N-Channel, Metal Oxide
• Power-Max 210W
• Drain-to-Source-Voltage-Vdss 650V
• Input-Capacitance-Ciss-Vds 3375pF @ 100V
• FET-Feature Standard
• Current-Continuous-Drain-Id-25°C 35A (Tc)
• Rds-On-Max-Id-Vgs 78 mOhm @ 19.5A, 10V
• Vgs-th-Max-Id 5V @ 250μA
• Gate-Charge-Qg-Vgs 91nC @ 10V
• Pd-Power-Dissipation 208 W
• Id-Continuous-Drain-Current 35 A
• Vds-Drain-Source-Breakdown-Voltage 650 V
• Rds-On-Drain-Source-Resistance 78 mOhms
• Transistor-Polarity N-Channel

STW45N65M5 FAQ

• A: What is the Series of the product?

  Q: The Series of the product is MDmesh V.

• A: What is the Packaging of the product?

  Q: The Packaging of the product is Tube.

• A: What is the Unit-Weight of the product?

  Q: The Unit-Weight of the product is 1.340411 oz.

• A: At what frequency does the Mounting-Style?

  Q: The product Mounting-Style is Through Hole.

• A: What is the Package-Case of the product?

  Q: The Package-Case of the product is TO-247-3.

• A: What is the Technology of the product?

  Q: The Technology of the product is Si.

• A: At what frequency does the Operating-Temperature?

  Q: The product Operating-Temperature is 150°C (TJ).

• A: Is the cutoff frequency of the product Mounting-Type?

  Q: Yes, the product's Mounting-Type is indeed Through Hole

• A: What is the Supplier-Device-Package of the product?

  Q: The Supplier-Device-Package of the product is TO-247.

• A: At what frequency does the FET-Type?

  Q: The product FET-Type is MOSFET N-Channel, Metal Oxide.

• A: What is the Drain-to-Source-Voltage-Vdss of the product?

  Q: The Drain-to-Source-Voltage-Vdss of the product is 650V.

• A: What is the Input-Capacitance-Ciss-Vds of the product?

  Q: The Input-Capacitance-Ciss-Vds of the product is 3375pF @ 100V.

• A: Is the cutoff frequency of the product FET-Feature?

  Q: Yes, the product's FET-Feature is indeed Standard

• A: At what frequency does the Current-Continuous-Drain-Id-25°C?

  Q: The product Current-Continuous-Drain-Id-25°C is 35A (Tc).

• A: Is the cutoff frequency of the product Rds-On-Max-Id-Vgs?

  Q: Yes, the product's Rds-On-Max-Id-Vgs is indeed 78 mOhm @ 19.5A, 10V

• A: At what frequency does the Pd-Power-Dissipation?

  Q: The product Pd-Power-Dissipation is 208 W.

• A: What is the Id-Continuous-Drain-Current of the product?

  Q: The Id-Continuous-Drain-Current of the product is 35 A.

• A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

  Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 650 V

• A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

  Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 78 mOhms

• A: At what frequency does the Transistor-Polarity?

  Q: The product Transistor-Polarity is N-Channel.