STW36NM60N

Mfr. #: STW36NM60N
Produttore: STMicroelectronics
Descrizione: RF Bipolar Transistors MOSFET N-Ch 600V 0.092 Ohm 29A MDmesh II
Ciclo vitale: Nuovo da questo produttore.
Scheda dati: STW36NM60N Scheda dati
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STW36NM60N Overview

Product belongs to the STW36NM60N series. Tube is the packaging method for this product Weight of 1.340411 oz Through Hole Mounting-Style TO-247-3 Si is the technology used. Number of channels: 1 Channel Transistor type: 1 N-Channel Power-off control: 210 W Maximum operating temperature of + 150 C The ID of continuous drain current is 29 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 600 V. The 105 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel.

STW36NM60N Image

STW36NM60N

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STW36NM60N Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series STW36NM60N
  • Packaging Tube
  • Unit-Weight 1.340411 oz
  • Mounting-Style Through Hole
  • Package-Case TO-247-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 210 W
  • Maximum-Operating-Temperature + 150 C
  • Id-Continuous-Drain-Current 29 A
  • Vds-Drain-Source-Breakdown-Voltage 600 V
  • Rds-On-Drain-Source-Resistance 105 mOhms
  • Transistor-Polarity N-Channel

STW36NM60N

STW36NM60N Specifications

STW36NM60N FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is STW36NM60N.

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Tube

  • A: Is the cutoff frequency of the product Unit-Weight?

    Q: Yes, the product's Unit-Weight is indeed 1.340411 oz

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is Through Hole.

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is TO-247-3.

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: Is the cutoff frequency of the product Number-of-Channels?

    Q: Yes, the product's Number-of-Channels is indeed 1 Channel

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 1 N-Channel.

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 210 W.

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is 29 A.

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 600 V

  • A: At what frequency does the Rds-On-Drain-Source-Resistance?

    Q: The product Rds-On-Drain-Source-Resistance is 105 mOhms.

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is N-Channel.

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