STW20NK50Z

Mfr. #: STW20NK50Z
Produttore: STMicroelectronics
Descrizione: MOSFET N-CH 500V 17A TO-247
Ciclo vitale: Nuovo da questo produttore.
Scheda dati: STW20NK50Z Scheda dati
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STW20NK50Z Overview

Product belongs to the SuperMESH series. Tube is the packaging method for this product Weight of 1.340411 oz Through Hole Mounting-Style TO-247-3 Si is the technology used. Operational temperature range: 150°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: TO-247-3 Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 500V This product has an 2600pF @ 25V value of 300pF @ 25V. This product's Standard. 17A (Tc) continuous drain-ID current at 25°C; This product has an 270 mOhm @ 8.5A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 190 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 15 ns of 16 ns. This product has a 20 ns of 16 ns. This product's 30 V. The ID of continuous drain current is 17 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 500 V. The 270 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 70 ns This product has a 28 ns. Qg-Gate-Charge is 85 nC. This product operates in Enhancement channel mode for optimal performance.

STW20NK50Z Image

STW20NK50Z

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STW20NK50Z Specifications
  • Manufacturer ST
  • Product Category FETs - Single
  • Series SuperMESH
  • Packaging Tube
  • Unit-Weight 1.340411 oz
  • Mounting-Style Through Hole
  • Package-Case TO-247-3
  • Technology Si
  • Operating-Temperature 150°C (TJ)
  • Mounting-Type Through Hole
  • Number-of-Channels 1 Channel
  • Supplier-Device-Package TO-247-3
  • Configuration Single
  • FET-Type MOSFET N-Channel, Metal Oxide
  • Power-Max 190W
  • Transistor-Type 1 N-Channel
  • Drain-to-Source-Voltage-Vdss 500V
  • Input-Capacitance-Ciss-Vds 2600pF @ 25V
  • FET-Feature Standard
  • Current-Continuous-Drain-Id-25°C 17A (Tc)
  • Rds-On-Max-Id-Vgs 270 mOhm @ 8.5A, 10V
  • Vgs-th-Max-Id 4.5V @ 100μA
  • Gate-Charge-Qg-Vgs 119nC @ 10V
  • Pd-Power-Dissipation 190 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 15 ns
  • Rise-Time 20 ns
  • Vgs-Gate-Source-Voltage 30 V
  • Id-Continuous-Drain-Current 17 A
  • Vds-Drain-Source-Breakdown-Voltage 500 V
  • Rds-On-Drain-Source-Resistance 270 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 70 ns
  • Typical-Turn-On-Delay-Time 28 ns
  • Qg-Gate-Charge 85 nC
  • Channel-Mode Enhancement

STW20NK50Z

STW20NK50Z Specifications

STW20NK50Z FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed SuperMESH

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Tube.

  • A: Is the cutoff frequency of the product Unit-Weight?

    Q: Yes, the product's Unit-Weight is indeed 1.340411 oz

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is Through Hole.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-247-3.

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: At what frequency does the Operating-Temperature?

    Q: The product Operating-Temperature is 150°C (TJ).

  • A: At what frequency does the Mounting-Type?

    Q: The product Mounting-Type is Through Hole.

  • A: What is the Number-of-Channels of the product?

    Q: The Number-of-Channels of the product is 1 Channel.

  • A: Is the cutoff frequency of the product Supplier-Device-Package?

    Q: Yes, the product's Supplier-Device-Package is indeed TO-247-3

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single.

  • A: What is the FET-Type of the product?

    Q: The FET-Type of the product is MOSFET N-Channel, Metal Oxide.

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 1 N-Channel.

  • A: Is the cutoff frequency of the product Drain-to-Source-Voltage-Vdss?

    Q: Yes, the product's Drain-to-Source-Voltage-Vdss is indeed 500V

  • A: Is the cutoff frequency of the product Input-Capacitance-Ciss-Vds?

    Q: Yes, the product's Input-Capacitance-Ciss-Vds is indeed 2600pF @ 25V

  • A: Is the cutoff frequency of the product FET-Feature?

    Q: Yes, the product's FET-Feature is indeed Standard

  • A: What is the Current-Continuous-Drain-Id-25°C of the product?

    Q: The Current-Continuous-Drain-Id-25°C of the product is 17A (Tc).

  • A: Is the cutoff frequency of the product Rds-On-Max-Id-Vgs?

    Q: Yes, the product's Rds-On-Max-Id-Vgs is indeed 270 mOhm @ 8.5A, 10V

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 190 W

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

  • A: At what frequency does the Fall-Time?

    Q: The product Fall-Time is 15 ns.

  • A: At what frequency does the Rise-Time?

    Q: The product Rise-Time is 20 ns.

  • A: What is the Vgs-Gate-Source-Voltage of the product?

    Q: The Vgs-Gate-Source-Voltage of the product is 30 V.

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 17 A

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 500 V.

  • A: At what frequency does the Rds-On-Drain-Source-Resistance?

    Q: The product Rds-On-Drain-Source-Resistance is 270 mOhms.

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is N-Channel.

  • A: What is the Typical-Turn-Off-Delay-Time of the product?

    Q: The Typical-Turn-Off-Delay-Time of the product is 70 ns.

  • A: At what frequency does the Typical-Turn-On-Delay-Time?

    Q: The product Typical-Turn-On-Delay-Time is 28 ns.

  • A: Is the cutoff frequency of the product Qg-Gate-Charge?

    Q: Yes, the product's Qg-Gate-Charge is indeed 85 nC

  • A: Is the cutoff frequency of the product Channel-Mode?

    Q: Yes, the product's Channel-Mode is indeed Enhancement

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