| Mfr. #: | STW11NM80 |
|---|---|
| Produttore: | STMicroelectronics |
| Descrizione: | MOSFET N-CH 800V 11A TO-247 |
| Ciclo vitale: | Nuovo da questo produttore. |
| Scheda dati: | STW11NM80 Scheda dati |
Product belongs to the MDmesh series. Tube is the packaging method for this product Weight of 1.340411 oz Through Hole Mounting-Style TO-247-3 Si is the technology used. Operational temperature range: -65°C ~ 150°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: TO-247-3 Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 800V This product has an 1630pF @ 25V value of 300pF @ 25V. This product's Standard. 11A (Tc) continuous drain-ID current at 25°C; This product has an 400 mOhm @ 5.5A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 150 W Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C This product has a 15 ns of 16 ns. This product has a 17 ns of 16 ns. This product's 30 V. The ID of continuous drain current is 11 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 800 V. The 400 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 46 ns This product has a 22 ns. This product features a 8 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STW11NM80 Specifications
A: Is the cutoff frequency of the product Series?
Q: Yes, the product's Series is indeed MDmesh
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Tube
A: At what frequency does the Unit-Weight?
Q: The product Unit-Weight is 1.340411 oz.
A: Is the cutoff frequency of the product Mounting-Style?
Q: Yes, the product's Mounting-Style is indeed Through Hole
A: At what frequency does the Package-Case?
Q: The product Package-Case is TO-247-3.
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: At what frequency does the Operating-Temperature?
Q: The product Operating-Temperature is -65°C ~ 150°C (TJ).
A: Is the cutoff frequency of the product Mounting-Type?
Q: Yes, the product's Mounting-Type is indeed Through Hole
A: At what frequency does the Number-of-Channels?
Q: The product Number-of-Channels is 1 Channel.
A: Is the cutoff frequency of the product Supplier-Device-Package?
Q: Yes, the product's Supplier-Device-Package is indeed TO-247-3
A: Is the cutoff frequency of the product Configuration?
Q: Yes, the product's Configuration is indeed Single
A: Is the cutoff frequency of the product FET-Type?
Q: Yes, the product's FET-Type is indeed MOSFET N-Channel, Metal Oxide
A: At what frequency does the Transistor-Type?
Q: The product Transistor-Type is 1 N-Channel.
A: What is the Drain-to-Source-Voltage-Vdss of the product?
Q: The Drain-to-Source-Voltage-Vdss of the product is 800V.
A: What is the Input-Capacitance-Ciss-Vds of the product?
Q: The Input-Capacitance-Ciss-Vds of the product is 1630pF @ 25V.
A: Is the cutoff frequency of the product FET-Feature?
Q: Yes, the product's FET-Feature is indeed Standard
A: At what frequency does the Current-Continuous-Drain-Id-25°C?
Q: The product Current-Continuous-Drain-Id-25°C is 11A (Tc).
A: What is the Rds-On-Max-Id-Vgs of the product?
Q: The Rds-On-Max-Id-Vgs of the product is 400 mOhm @ 5.5A, 10V.
A: At what frequency does the Pd-Power-Dissipation?
Q: The product Pd-Power-Dissipation is 150 W.
A: What is the Maximum-Operating-Temperature of the product?
Q: The Maximum-Operating-Temperature of the product is + 150 C.
A: What is the Minimum-Operating-Temperature of the product?
Q: The Minimum-Operating-Temperature of the product is - 65 C.
A: At what frequency does the Fall-Time?
Q: The product Fall-Time is 15 ns.
A: Is the cutoff frequency of the product Rise-Time?
Q: Yes, the product's Rise-Time is indeed 17 ns
A: What is the Vgs-Gate-Source-Voltage of the product?
Q: The Vgs-Gate-Source-Voltage of the product is 30 V.
A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?
Q: Yes, the product's Id-Continuous-Drain-Current is indeed 11 A
A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?
Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 800 V
A: What is the Rds-On-Drain-Source-Resistance of the product?
Q: The Rds-On-Drain-Source-Resistance of the product is 400 mOhms.
A: Is the cutoff frequency of the product Transistor-Polarity?
Q: Yes, the product's Transistor-Polarity is indeed N-Channel
A: At what frequency does the Typical-Turn-Off-Delay-Time?
Q: The product Typical-Turn-Off-Delay-Time is 46 ns.
A: What is the Typical-Turn-On-Delay-Time of the product?
Q: The Typical-Turn-On-Delay-Time of the product is 22 ns.
A: Is the cutoff frequency of the product Forward-Transconductance-Min?
Q: Yes, the product's Forward-Transconductance-Min is indeed 8 S
A: Is the cutoff frequency of the product Channel-Mode?
Q: Yes, the product's Channel-Mode is indeed Enhancement