| Mfr. #: | STU6NF10 |
|---|---|
| Produttore: | STMicroelectronics |
| Descrizione: | RF Bipolar Transistors MOSFET N-Ch, 100V-0.22ohms 6A |
| Ciclo vitale: | Nuovo da questo produttore. |
| Scheda dati: | STU6NF10 Scheda dati |
RoHS compliant with Details Input bias current of Through Hole Package type is IPAK-3 Single 1 Channel for basic signal processing The transistor polarity is N-Channel. 100 V is the Vds - Drain-Source Breakdown Voltage Continuous Drain Current identified as 6 A; The Rds On - Drain-Source Resistance of the product is 250 mOhms. The Vgs - Gate-Source Voltage attribute for this product is 20 V. Maximum Operating Temperature: + 175 C Si is the technology used. Tube is the packaging method for this product Enhancement Channel Mode Configuration Single Fall Time of 3 ns - 65 C minimum operating temperature The power dissipation is 30 W. 10 ns Rise Time Product belongs to the N-channel STripFET series. 1 N-Channel Transistor Type Typical Turn-Off Delay Time of 20 ns; The 6 ns typical turn-on delay time The Unit Weight is 0.139332 oz.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STU6NF10 Specifications
A: What is the RoHS of the product?
Q: The RoHS of the product is Details.
A: Is the cutoff frequency of the product Mounting Style?
Q: Yes, the product's Mounting Style is indeed Through Hole
A: What is the Package / Case of the product?
Q: The Package / Case of the product is IPAK-3.
A: At what frequency does the Number of Channels?
Q: The product Number of Channels is 1 Channel.
A: At what frequency does the Transistor Polarity?
Q: The product Transistor Polarity is N-Channel.
A: At what frequency does the Vds - Drain-Source Breakdown Voltage?
Q: The product Vds - Drain-Source Breakdown Voltage is 100 V.
A: What is the Id - Continuous Drain Current of the product?
Q: The Id - Continuous Drain Current of the product is 6 A.
A: At what frequency does the Rds On - Drain-Source Resistance?
Q: The product Rds On - Drain-Source Resistance is 250 mOhms.
A: Is the cutoff frequency of the product Vgs - Gate-Source Voltage?
Q: Yes, the product's Vgs - Gate-Source Voltage is indeed 20 V
A: At what frequency does the Maximum Operating Temperature?
Q: The product Maximum Operating Temperature is + 175 C.
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: What is the Packaging of the product?
Q: The Packaging of the product is Tube.
A: At what frequency does the Channel Mode?
Q: The product Channel Mode is Enhancement.
A: Is the cutoff frequency of the product Configuration?
Q: Yes, the product's Configuration is indeed Single
A: Is the cutoff frequency of the product Fall Time?
Q: Yes, the product's Fall Time is indeed 3 ns
A: At what frequency does the Minimum Operating Temperature?
Q: The product Minimum Operating Temperature is - 65 C.
A: What is the Pd - Power Dissipation of the product?
Q: The Pd - Power Dissipation of the product is 30 W.
A: At what frequency does the Rise Time?
Q: The product Rise Time is 10 ns.
A: What is the Series of the product?
Q: The Series of the product is N-channel STripFET.
A: Is the cutoff frequency of the product Transistor Type?
Q: Yes, the product's Transistor Type is indeed 1 N-Channel
A: At what frequency does the Typical Turn-Off Delay Time?
Q: The product Typical Turn-Off Delay Time is 20 ns.
A: What is the Typical Turn-On Delay Time of the product?
Q: The Typical Turn-On Delay Time of the product is 6 ns.
A: What is the Unit Weight of the product?
Q: The Unit Weight of the product is 0.139332 oz.