STQ2LN60K3-AP

STQ2LN60K3-AP Overview

Product belongs to the N-channel MDmesh series. Ammo Pack is the packaging method for this product Weight of 0.007760 oz Through Hole Mounting-Style TO-92-3 Si is the technology used. Power-off control: 2.5 W This product has a 21 ns of 16 ns. This product has a 8.5 ns of 16 ns. This product's 30 V. The ID of continuous drain current is 600 mA. This product has a Vds-Drain-Source-Breakdown-Voltageof 600 V. This product has a 4.5 V Vgs-th gate-source threshold voltage for efficient power management. The 4.5 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 23.5 ns This product has a 10 ns. Qg-Gate-Charge is 12 nC. This product operates in Enhancement channel mode for optimal performance.

STQ2LN60K3-AP Image

STQ2LN60K3-AP Specifications

• Manufacturer STMicroelectronics
• Product Category Transistors - FETs, MOSFETs - Single
• Series N-channel MDmesh
• Packaging Ammo Pack
• Unit-Weight 0.007760 oz
• Mounting-Style Through Hole
• Package-Case TO-92-3
• Technology Si
• Pd-Power-Dissipation 2.5 W
• Fall-Time 21 ns
• Rise-Time 8.5 ns
• Vgs-Gate-Source-Voltage 30 V
• Id-Continuous-Drain-Current 600 mA
• Vds-Drain-Source-Breakdown-Voltage 600 V
• Vgs-th-Gate-Source-Threshold-Voltage 4.5 V
• Rds-On-Drain-Source-Resistance 4.5 Ohms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 23.5 ns
• Typical-Turn-On-Delay-Time 10 ns
• Qg-Gate-Charge 12 nC
• Channel-Mode Enhancement

STQ2LN60K3-AP FAQ

• A: Is the cutoff frequency of the product Series?

  Q: Yes, the product's Series is indeed N-channel MDmesh

• A: At what frequency does the Packaging?

  Q: The product Packaging is Ammo Pack.

• A: What is the Unit-Weight of the product?

  Q: The Unit-Weight of the product is 0.007760 oz.

• A: At what frequency does the Mounting-Style?

  Q: The product Mounting-Style is Through Hole.

• A: Is the cutoff frequency of the product Package-Case?

  Q: Yes, the product's Package-Case is indeed TO-92-3

• A: Is the cutoff frequency of the product Technology?

  Q: Yes, the product's Technology is indeed Si

• A: What is the Pd-Power-Dissipation of the product?

  Q: The Pd-Power-Dissipation of the product is 2.5 W.

• A: Is the cutoff frequency of the product Fall-Time?

  Q: Yes, the product's Fall-Time is indeed 21 ns

• A: At what frequency does the Rise-Time?

  Q: The product Rise-Time is 8.5 ns.

• A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

  Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 30 V

• A: At what frequency does the Id-Continuous-Drain-Current?

  Q: The product Id-Continuous-Drain-Current is 600 mA.

• A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

  Q: The product Vds-Drain-Source-Breakdown-Voltage is 600 V.

• A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?

  Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 4.5 V

• A: At what frequency does the Rds-On-Drain-Source-Resistance?

  Q: The product Rds-On-Drain-Source-Resistance is 4.5 Ohms.

• A: What is the Transistor-Polarity of the product?

  Q: The Transistor-Polarity of the product is N-Channel.

• A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

  Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 23.5 ns

• A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

  Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 10 ns

• A: At what frequency does the Qg-Gate-Charge?

  Q: The product Qg-Gate-Charge is 12 nC.

• A: Is the cutoff frequency of the product Channel-Mode?

  Q: Yes, the product's Channel-Mode is indeed Enhancement