| Mfr. #: | STP9NM60N |
|---|---|
| Produttore: | STMicroelectronics |
| Descrizione: | MOSFET N-CH 600V 6.5A TO-220 |
| Ciclo vitale: | Nuovo da questo produttore. |
| Scheda dati: | STP9NM60N Scheda dati |
Product belongs to the N-channel MDmesh series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Number of channels: 1 Channel Transistor type: 1 N-Channel The ID of continuous drain current is 6.5 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 600 V. The 630 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STP9NM60N Specifications
A: At what frequency does the Series?
Q: The product Series is N-channel MDmesh.
A: What is the Packaging of the product?
Q: The Packaging of the product is Tube.
A: At what frequency does the Unit-Weight?
Q: The product Unit-Weight is 0.011640 oz.
A: Is the cutoff frequency of the product Mounting-Style?
Q: Yes, the product's Mounting-Style is indeed Through Hole
A: What is the Package-Case of the product?
Q: The Package-Case of the product is TO-220-3.
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: Is the cutoff frequency of the product Number-of-Channels?
Q: Yes, the product's Number-of-Channels is indeed 1 Channel
A: Is the cutoff frequency of the product Transistor-Type?
Q: Yes, the product's Transistor-Type is indeed 1 N-Channel
A: What is the Id-Continuous-Drain-Current of the product?
Q: The Id-Continuous-Drain-Current of the product is 6.5 A.
A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?
Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 600 V.
A: What is the Rds-On-Drain-Source-Resistance of the product?
Q: The Rds-On-Drain-Source-Resistance of the product is 630 mOhms.
A: What is the Transistor-Polarity of the product?
Q: The Transistor-Polarity of the product is N-Channel.