| Mfr. #: | STP14NF12FP |
|---|---|
| Produttore: | STMicroelectronics |
| Descrizione: | MOSFET N-Ch, 120V-0.16ohms 14A |
| Ciclo vitale: | Nuovo da questo produttore. |
| Scheda dati: | STP14NF12FP Scheda dati |


RoHS compliant with Details Input bias current of Through Hole Package type is TO-220-3 Single 1 Channel for basic signal processing The transistor polarity is N-Channel. 120 V is the Vds - Drain-Source Breakdown Voltage Continuous Drain Current identified as 8.5 A; The Rds On - Drain-Source Resistance of the product is 180 mOhms. The Vgs - Gate-Source Voltage attribute for this product is 20 V. Maximum Operating Temperature: + 175 C Si is the technology used. Tube is the packaging method for this product Enhancement Channel Mode Configuration Single Fall Time of 8 ns - 55 C minimum operating temperature The power dissipation is 25 W. 25 ns Rise Time Product belongs to the N-channel STripFET series. 1 N-Channel Transistor Type Typical Turn-Off Delay Time of 32 ns; The 16 ns typical turn-on delay time The Unit Weight is 0.011640 oz.

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STP14NF12FP Specifications
A: What is the RoHS of the product?
Q: The RoHS of the product is Details.
A: Is the cutoff frequency of the product Mounting Style?
Q: Yes, the product's Mounting Style is indeed Through Hole
A: At what frequency does the Package / Case?
Q: The product Package / Case is TO-220-3.
A: What is the Number of Channels of the product?
Q: The Number of Channels of the product is 1 Channel.
A: At what frequency does the Transistor Polarity?
Q: The product Transistor Polarity is N-Channel.
A: Is the cutoff frequency of the product Vds - Drain-Source Breakdown Voltage?
Q: Yes, the product's Vds - Drain-Source Breakdown Voltage is indeed 120 V
A: At what frequency does the Id - Continuous Drain Current?
Q: The product Id - Continuous Drain Current is 8.5 A.
A: What is the Rds On - Drain-Source Resistance of the product?
Q: The Rds On - Drain-Source Resistance of the product is 180 mOhms.
A: Is the cutoff frequency of the product Vgs - Gate-Source Voltage?
Q: Yes, the product's Vgs - Gate-Source Voltage is indeed 20 V
A: Is the cutoff frequency of the product Maximum Operating Temperature?
Q: Yes, the product's Maximum Operating Temperature is indeed + 175 C
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: What is the Packaging of the product?
Q: The Packaging of the product is Tube.
A: At what frequency does the Channel Mode?
Q: The product Channel Mode is Enhancement.
A: At what frequency does the Configuration?
Q: The product Configuration is Single.
A: At what frequency does the Fall Time?
Q: The product Fall Time is 8 ns.
A: At what frequency does the Minimum Operating Temperature?
Q: The product Minimum Operating Temperature is - 55 C.
A: What is the Pd - Power Dissipation of the product?
Q: The Pd - Power Dissipation of the product is 25 W.
A: Is the cutoff frequency of the product Rise Time?
Q: Yes, the product's Rise Time is indeed 25 ns
A: What is the Series of the product?
Q: The Series of the product is N-channel STripFET.
A: At what frequency does the Transistor Type?
Q: The product Transistor Type is 1 N-Channel.
A: At what frequency does the Typical Turn-Off Delay Time?
Q: The product Typical Turn-Off Delay Time is 32 ns.
A: At what frequency does the Typical Turn-On Delay Time?
Q: The product Typical Turn-On Delay Time is 16 ns.
A: What is the Unit Weight of the product?
Q: The Unit Weight of the product is 0.011640 oz.