STP10N105K5

Mfr. #: STP10N105K5
Produttore: STMicroelectronics
Descrizione: IGBT Transistors MOSFET POWER MOSFET
Ciclo vitale: Nuovo da questo produttore.
Scheda dati: STP10N105K5 Scheda dati
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STP10N105K5 Overview

Product belongs to the MDmesh K5 series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Power-off control: 130 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 21.5 ns of 16 ns. This product has a 8 ns of 16 ns. This product's 30 V. The ID of continuous drain current is 6 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 1050 V. This product has a 4 V Vgs-th gate-source threshold voltage for efficient power management. The 1.3 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 50 ns This product has a 19 ns. Qg-Gate-Charge is 21.5 nC. This product operates in Enhancement channel mode for optimal performance.

STP10N105K5 Image

STP10N105K5

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STP10N105K5 Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series MDmesh K5
  • Packaging Tube
  • Unit-Weight 0.011640 oz
  • Mounting-Style Through Hole
  • Package-Case TO-220-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Pd-Power-Dissipation 130 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 21.5 ns
  • Rise-Time 8 ns
  • Vgs-Gate-Source-Voltage 30 V
  • Id-Continuous-Drain-Current 6 A
  • Vds-Drain-Source-Breakdown-Voltage 1050 V
  • Vgs-th-Gate-Source-Threshold-Voltage 4 V
  • Rds-On-Drain-Source-Resistance 1.3 Ohms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 50 ns
  • Typical-Turn-On-Delay-Time 19 ns
  • Qg-Gate-Charge 21.5 nC
  • Channel-Mode Enhancement

STP10N105K5

STP10N105K5 Specifications

STP10N105K5 FAQ
  • A: At what frequency does the Series?

    Q: The product Series is MDmesh K5.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Tube.

  • A: Is the cutoff frequency of the product Unit-Weight?

    Q: Yes, the product's Unit-Weight is indeed 0.011640 oz

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is Through Hole.

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed TO-220-3

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: What is the Number-of-Channels of the product?

    Q: The Number-of-Channels of the product is 1 Channel.

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single.

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 130 W.

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 55 C.

  • A: Is the cutoff frequency of the product Fall-Time?

    Q: Yes, the product's Fall-Time is indeed 21.5 ns

  • A: At what frequency does the Rise-Time?

    Q: The product Rise-Time is 8 ns.

  • A: At what frequency does the Vgs-Gate-Source-Voltage?

    Q: The product Vgs-Gate-Source-Voltage is 30 V.

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 6 A

  • A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

    Q: The product Vds-Drain-Source-Breakdown-Voltage is 1050 V.

  • A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

    Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 4 V.

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 1.3 Ohms

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is N-Channel.

  • A: What is the Typical-Turn-Off-Delay-Time of the product?

    Q: The Typical-Turn-Off-Delay-Time of the product is 50 ns.

  • A: At what frequency does the Typical-Turn-On-Delay-Time?

    Q: The product Typical-Turn-On-Delay-Time is 19 ns.

  • A: At what frequency does the Qg-Gate-Charge?

    Q: The product Qg-Gate-Charge is 21.5 nC.

  • A: What is the Channel-Mode of the product?

    Q: The Channel-Mode of the product is Enhancement.

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